Flexible Thin-Film Electronics
We fabricate electronic thin-film devices on free-standing plastic substrates. All active electronic devices are based on inorganic materials and oxide semiconductors like amorphous Indium-Gallium-Zinc-Oxide. Since the most important electronic device is the transistor, we realize thin-film transistors (TFTs) on a variety of substrates and with a variety of geometries to customize their properties towards specific applications such as low-power-, high-frequency-, or imperceptible-electronics.
The main focus lies on the fabrication of high-performance devices on free-standing flexible substrates and the optimization of the electrical performance together with their mechanical bendability. Subsequently our TFTs can act as building blocks for more complex systems.
Device structure
![](http://physics.groups.unibz.it/wp-content/uploads/2023/06/R1-tft-1024x248.png)
DC performance
![](http://physics.groups.unibz.it/wp-content/uploads/2023/06/R1-DC-1024x362.png)
AC performance
![](http://physics.groups.unibz.it/wp-content/uploads/2023/06/R1-AC-1024x276.png)
Bending
![](http://physics.groups.unibz.it/wp-content/uploads/2023/06/R1-bending-1024x272.png)
Selected relevant publications:
- → N. S. Khaanghah, D. Corsino, F. Catania, J. Costa, G. Cantarella, and N. Münzenrieder, “Influence of semiconductor island geometry on the ac performance of flexible InGaZnO TFTs,” IEEE Electron Device Letters, vol. 44, iss. 5, pp. 773-776, 2023.
- → D. Corsino, F. Catania, K. Ishida, T. Meister, F. Ellinger, G. Cantarella, and N. Münzenrieder, “Monolithic integration, performance, and comparison of self-aligned and conventional IGZO thin-film transistors on a flexible substrate,” IEEE Journal on Flexible Electronics, vol. 1, iss. 3, pp. 159-166, 2022.
- → F. Catania, M. Ahmad, D. Corsino, N. Saeedzadeh Khaanghah, L. Petti, N. Münzenrieder, and G. Cantarella, “Ac performance of flexible transparent InGaZnO thin-film transistors and circuits,” IEEE Transactions on Electron Devices, vol. 69, iss. 9, pp. 4930-4935, 2022.
- → J. C. Costa, A. P. Y. P. Kermani, G. Cantarella, L. Petti, C. Vogt, A. Daus, S. Knobelspies, G. Tröster, and N. S. Münzenrieder, “Long-term aging of Al2O3 passivated and unpassivated flexible a-IGZO TFTs,” IEEE Transactions on Electron Devices, vol. 67, iss. 11, pp. 4934-4939, 2020.
- → N. Münzenrieder, G. Cantarella, C. Vogt, L. Petti, L. Büthe, G. A. Salvatore, Y. Fang, R. Andri, Y. Lam, R. Libanori, D. Widner, A. R. Studart, and G. Tröster, “Stretchable and conformable oxide thin-film electronics,” Advanced Electronic Materials, vol. 1, iss. 3, p. 1400038, 2015.
- → N. Münzenrieder, G. A. Salvatore, L. Petti, C. Zysset, L. Büthe, C. Vogt, G. Cantarella, and G. Tröster, “Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation,” Applied Physics Letters, vol. 105, iss. 26, p. 263504, 2014.
- → N. Münzenrieder, P. Voser, L. Petti, C. Zysset, L. Büthe, C. Vogt, G. A. Salvatore, and G. Tröster, “Flexible self-aligned double-gate IGZO TFT,” IEEE Electron Device Letters, vol. 35, iss. 1, p. 69–71, 2014.
- → N. Münzenrieder, L. Petti, C. Zysset, T. Kinkeldei, G. A. Salvatore, and G. Troster, “Flexible self-aligned amorphous InGaZnO thin-film transistors with submicrometer channel length and a transit frequency of 135 MHz,” IEEE Transactions on Electron Devices, vol. 60, iss. 9, p. 2815–2820, 2013.
- → N. Münzenrieder, C. Zysset, L. Petti, T. Kinkeldei, G. A. Salvatore, and G. Tröster, “Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil,” Solid-State Electronics, vol. 84, pp. 198-204, 2013.
- → N. Münzenrieder, K. H. Cherenack, and G. Tröster, “The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs,” IEEE Transactions on Electron Devices, vol. 58, iss. 7, p. 2041–2048, 2011.