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Papers
2024
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F. Catania, E. Scattolo, D. Giubertoni, A. Cian, B. Shkodra, P. Lugli, L. Petti, N. Münzenrieder, and G. Cantarella, “Channel nanoscaling of ingazno tfts and circuits via focused ion beam,” Acs applied electronic materials, vol. 6, iss. 3, p. 1841–1847, 2024.
[Bibtex]@article{Catania_2024, added-at = {2024-09-26T10:02:33.000+0200}, author = {Catania, Federica and Scattolo, Elia and Giubertoni, Damiano and Cian, Alessandro and Shkodra, Bajramshahe and Lugli, Paolo and Petti, Luisa and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/22c502e6c993d2a82add3ac03eb57b291/nikomu}, doi = {10.1021/acsaelm.3c01767}, interhash = {f842897d50af570c407a44849e604f8f}, intrahash = {2c502e6c993d2a82add3ac03eb57b291}, issn = {2637-6113}, journal = {ACS Applied Electronic Materials}, keywords = {myown}, month = mar, number = 3, pages = {1841–1847}, publisher = {American Chemical Society (ACS)}, timestamp = {2024-09-26T10:02:33.000+0200}, title = {Channel Nanoscaling of InGaZnO TFTs and Circuits via Focused Ion Beam}, volume = 6, year = 2024 } - N. Münzenrieder, H. De Souza Oliveira, F. Catania, N. S. Khaanghah, A. H. Lanthaler, D. Corsino, and G. Cantarella, “Flexible oxide electronics for extreme geometries and mechanical deformations,” in 2024 ieee 24th international conference on nanotechnology (nano), 2024, pp. 131-135.
[Bibtex]@inproceedings{10628840, abstract = {Electronics is moving away from a one-solution-fits-all approach based on traditional semiconductor technologies. This is because an ecosystem for biocompatible, large-area, environmentally friendly, wearable, and high-performance electronics based on a variety of materials and technologies can provide bespoke solutions for specific application scenarios. An important aspect of this development is represented by soft and flexible systems that can bend and stretch. Here we present our flexible electronics technology which is based on thin films and oxide semiconductors. Transistors, sensors and circuits fabricated on polymer substrates exhibit carrier mobilities around 16.5 cm2 V-1 S-1, transit frequencies exceeding 100 MHz, and voltage gains up to 19 dB while being bend to millimeter radii or stretched by more than 200%.}, added-at = {2024-09-26T10:01:37.000+0200}, author = {Münzenrieder, Niko and De Souza Oliveira, Hugo and Catania, Federica and Khaanghah, Niloofar Saeedzadeh and Lanthaler, Albert Heinrich and Corsino, Dianne and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/2277b4c3856763db6b9edfc5c955856c7/nikomu}, booktitle = {2024 IEEE 24th International Conference on Nanotechnology (NANO)}, doi = {10.1109/NANO61778.2024.10628840}, interhash = {8406316f6fde26b80336a2011f1decb8}, intrahash = {277b4c3856763db6b9edfc5c955856c7}, issn = {1944-9380}, keywords = {myown}, month = {July}, pages = {131-135}, timestamp = {2024-09-26T10:01:37.000+0200}, title = {Flexible Oxide Electronics for Extreme Geometries and Mechanical Deformations}, year = 2024 } - Q. Zahid Husain, D. Corsino, F. Catania, K. Ishida, T. Meister, F. Ellinger, N. Münzenrieder, and G. Cantarella, “Dc and ac performance of ingazno thin-film transistors on flexible peek substrate,” Ieee transactions on electron devices, vol. 71, iss. 10, pp. 6073-6078, 2024.
[Bibtex]@article{10677371, abstract = {Thin-film transistors (TFTs) play a vital role in flexible electronics. Here, vacuum-processed amorphous indium-gallium–zinc-oxide-based TFTs are fabricated on a $50~\mu $ m thick polyetheretherketone (PEEK) flexible substrate. The ac and dc performances of TFTs with channel length down to $3~\mu $ m are studied. The devices exhibit effective mobility, threshold voltage, and on-/off-current ratio 19.6 cm $^{{2}} \cdot $ V $^{-{1}} \cdot $ s $^{-{1}}$ , 2.9 V, and ${3} \times {10}^{{10}}$ , respectively. To address device stability, bias stress tests are performed, resulting in the maximum variation in the threshold voltage of +0.3 and −0.6 V for a gate voltage stress of +5 and −5 V, respectively, applied for 10 min. The ac performances of InGaZnO (IGZO)-based TFT on this substrate are reported for the first time. Here, the measured unity gain current frequency and unity gain power frequency are 5.4 and 28.5 MHz. Additionally, the TFTs stay fully functional when bent to radii as small as 3 mm exhibiting only minor mobility and threshold voltage variations of +0.4% and −0.2 V. After a dynamic bending test up to 5000 cycles, the mobility and threshold voltage of the TFT deviate by +12.9% and +0.2 V, respectively. These results demonstrate that biocompatible PEEK is a potential substrate for the realization of future unobtrusive wearable systems.}, added-at = {2024-09-26T10:00:48.000+0200}, author = {Zahid Husain, Qazi and Corsino, Dianne and Catania, Federica and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/25f9d8525257372b26dc404df2c2537c8/nikomu}, doi = {10.1109/TED.2024.3453220}, interhash = {da3a69b092b0fc7e2c7c6162ad5cc5f5}, intrahash = {5f9d8525257372b26dc404df2c2537c8}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = oct, number = 10, pages = {6073-6078}, timestamp = {2024-09-26T10:00:48.000+0200}, title = {DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate}, volume = 71, year = 2024 } - D. C. Corsino, M. Sait Abdusselamoglu, F. Catania, E. Avancini, N. Münzenrieder, and G. Cantarella, “Thin-film electronics on a green and flexible cellulose-based film,” Ieee transactions on electron devices, vol. 71, iss. 9, pp. 5401-5406, 2024.
[Bibtex]@article{10606104, abstract = {Flexible electronics, mostly realized on plastic substrates, enables various technologies to encompass a wider range of innovative applications such as wearables, implantable devices, and flexible sensors. However, this rapidly evolving field equates to a high turnover leading to a substantial electronic waste generation. To address this stark sustainability problem, research has shifted toward greener materials and methodologies for device fabrication. Here, we report the realization of thin-film electronics on triacetyl cellulose (TAC) film derived from a structural compound in plants called cellulose. Resistive temperature sensors based on sputtered Cu are achieved, demonstrating a linear relationship between resistance and temperatures up to $100~^{\circ }$ C. Multilayered thin-film transistors (TFTs) based on InGaZnO (IGZO) are also realized with an ON-OFF current ratio $\approx ~10^{{5}}$ , effective mobility of 13.2 cm $^{{2}}{\cdot }$ V $^{-{1}}{\cdot }$ s $^{-{1}}$ , threshold voltage of −0.2 V, and subthreshold swing of 161 mV $\cdot $ dec $^{-{1}}$ , which are characteristics comparable to devices fabricated on conventional plastic substrates. At the same time, we fabricated common-source amplifiers with a low-frequency voltage gain of 4.5 dB and a cutoff frequency of 50 Hz in flat condition. These parameters minimally vary (5.6 dB and 40 Hz) when the circuit is mechanically deformed by bending to a radius of 8 mm. Furthermore, the TAC film exhibits dissolvability in organic solvents such as acetone and acids such as acetic acid, nitric acid, and phosphoric acid. These findings demonstrate the potential of a cellulose-based film as an alternative to plastic substrates and its merits for the realization of green electronics.}, added-at = {2024-09-26T10:00:06.000+0200}, author = {Corsino, Dianne C. and Sait Abdusselamoglu, Mehmet and Catania, Federica and Avancini, Enrico and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/2ce986a7ad50b4301551f6d0bc899eb0d/nikomu}, doi = {10.1109/TED.2024.3427614}, interhash = {ea41df5ddfc0f025720e8a013831130e}, intrahash = {ce986a7ad50b4301551f6d0bc899eb0d}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {Sep.}, number = 9, pages = {5401-5406}, timestamp = {2024-09-26T10:00:06.000+0200}, title = {Thin-Film Electronics on a Green and Flexible Cellulose-Based Film}, volume = 71, year = 2024 } - A. Johnson, N. J. Kumar, and N. Münzenrieder, “Flexible inductive pressure sensor array,” in 2024 ieee international conference on flexible and printable sensors and systems (fleps), 2024, pp. 1-4.
[Bibtex]@inproceedings{10603528, abstract = {Elastic magnetorheological materials are gaining popularity due to their flexibility and adaptability. Pressure sensors have important applications in robotics, E-skin and industry. In this paper, an innovative flexible magnetic material inductive pressure sensor array is presented based on cast Ecoflex material with magnetic filler. A 4×4 sensor array is demonstrated using an inductive readout technique. The individual pixels of the array were calibrated and show a highly linear response with a R2 of 0.9953 and a sensitivity of 4.789 pHPa−1. The mutual interference between pixels in the array was measured. Based on this, the spatial resolution is improved using the mutual inductance between neighbouring sensors with a maximum-likeliness estimator. This allows the spacial detection of pressure and gestures with sub-pixel accuracy. The developed array is also bend tolerant, it was tested under repeated strain and bent around a 7mm diameter rod without significant variations of the sensor performance.}, added-at = {2024-09-26T09:58:43.000+0200}, author = {Johnson, Alexander and Kumar, Nimal Jagadeesh and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2b50defdf874bc4bc99c70a61fd05875c/nikomu}, booktitle = {2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS61194.2024.10603528}, interhash = {764a8fb4d472bbdfbbf06168c9991298}, intrahash = {b50defdf874bc4bc99c70a61fd05875c}, issn = {2832-8256}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2024-09-26T09:58:43.000+0200}, title = {Flexible Inductive Pressure Sensor Array}, year = 2024 } - A. H. Lanthaler, A. Carrasco-Pena, S. Krik, N. Münzenrieder, and G. Cantarella, “Transient thin-film zinc based sensor on flexible nettle-gelatin coated fabric,” in 2024 ieee international conference on flexible and printable sensors and systems (fleps), 2024, pp. 1-4.
[Bibtex]@inproceedings{10603792, abstract = {In the last years, the manufacturing of smart textile (e-textile) has been showing outstanding achievements in the fabrication of electronic systems, thanks to their exceptional electrical, thermal and optical properties. However, material performance and sustainability, complex integration methods and limited end-of-life processability are major challenges to wide adoption of e-textiles. In this work, a commercial 100% Nettle-based fabric coated with a Gelatin-glycerol resin, acting as planaritazion layer, was used for the first time as a substrate for the fabrication of thin-film temperature sensors. The devices were tested and characterized over a temperature range from 25 °C to 60 °C (at relative humidity of 26 ± 3%), showing a temperature coefficient of resistance α of 2.3×10−3 °C−1. Device functionality was demonstrated down to 2mm bending radius. In addition, the temperature sensor showed degradation properties, since natural dissolution occurred within 10 days, while it took 14 days for the planarization layer to degrade in De-Ionized (DI) water. The development of this device represents the first demonstration of a sustainable and fully-green technology for the fabrication of thin-film temperature sensors directly on nature-based fabrics, with possible application in recyclable wearable electronics and human health monitoring.}, added-at = {2024-09-26T09:57:51.000+0200}, author = {Lanthaler, Albert Heinrich and Carrasco-Pena, Alejandro and Krik, Soufiane and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/2d96228890e28a33dc862d8f6bbe026e7/nikomu}, booktitle = {2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS61194.2024.10603792}, interhash = {1617b7965f8941365834e548380881ee}, intrahash = {d96228890e28a33dc862d8f6bbe026e7}, issn = {2832-8256}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2024-09-26T09:57:51.000+0200}, title = {Transient Thin-film Zinc Based Sensor on Flexible Nettle-Gelatin Coated Fabric}, year = 2024 } - D. Bhatt, T. Kouprava, S. Krik, A. H. Lanthaler, P. Verge, D. F. Schmidt, N. Münzenrieder, and G. Cantarella, “Temperature sensors on recyclable vitrimer substrates,” in 2024 ieee international conference on flexible and printable sensors and systems (fleps), 2024, pp. 1-4.
[Bibtex]@inproceedings{10604203, abstract = {The increasing amount of electronic waste, predicted to reach 60 million tons by 2029, is one of the big health concerns for our society. This issue, together with plastic waste, represents the main environmental concern when dealing with large-area electronic devices and systems. The solution for this growing problem is to realize sustainable and green electronics, using new classes of recyclable and eco-friendly electronic materials and substrates. Innovative polymers, such as vitrimers, are promising candidates, thanks to their recyclability and biodegradability. In this work, vitrimers were synthesized and implemented for the first time as green substrate for transient thin-film temperature sensors using vacuum deposition. Here, Silver- and Zinc-based resistance temperature detectors (RTDs), as well as semiconductive thermistor exhibiting sensitivities of 0.21%°C−1, 0.18%°C−1 and −0.22%°C−1, are reported. All temperature sensors exhibit good linearity and stability over 10 heating-cooling cycles between 25 °C and 70 °C. Finally, to demonstrate the chemical degradability of a Zn RTD, the sensor was dissolved in water, which leads to a loss of functionality after 30 min and its complete dissolution after 1 h. Overall, the combination of recyclable vitrimers and green dissolvable electronics represents an innovative route towards a fully sustainable technological platform.}, added-at = {2024-09-26T09:57:14.000+0200}, author = {Bhatt, Deepa and Kouprava, Tinatin and Krik, Soufiane and Lanthaler, Albert Heinrich and Verge, Pierre and Schmidt, Daniel F. and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/23e64135c05a47e7e80987d8215b5a2b6/nikomu}, booktitle = {2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS61194.2024.10604203}, interhash = {d7b08f3837349dd667d02f7518a1c994}, intrahash = {3e64135c05a47e7e80987d8215b5a2b6}, issn = {2832-8256}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2024-09-26T09:57:14.000+0200}, title = {Temperature Sensors on Recyclable Vitrimer Substrates}, year = 2024 } - N. S. Khaanghah, S. Krik, H. de Souza Oliveira, A. Carrasco-Pena, M. Ciocca, L. Petti, M. Haller, G. Cantarella, and N. Münzenrieder, “Thin-film thermistor temperature sensors on animal-based substrates,” in 2024 ieee international conference on flexible and printable sensors and systems (fleps), 2024, pp. 1-4.
[Bibtex]@inproceedings{10603740, abstract = {Materials and technology advancements have enabled the development of thin-film electronics on substrates that were previously unsuitable. This article reports on the potential of using animal-based substrates, including buffalo horn (BH) and mother of pearl (MP), to fabricate negative temperature coefficient thermistors (NTC). The thermistors were fabricated using sputtered Zn metal and IGZO semiconducting thin-films. The conformal sputter deposition allowed the realization of functional devices on uneven natural substrates. The thermistors’ performance was investigated using a localized heater on top of the sensor and cycling the temperature between 25 °C and 80 °C. The thermistors show reliable performance over multiple temperature cycles but also a large hysteresis. For increasing temperatures, the sensitivity of the two thermistors in the linear range varies between 0.22%°C−1 and 0.16%°C−1 for the BH and MP substrates, respectively. Being naturally eco-friendly and compatible with vacuum deposition techniques, animal-based materials can offer promising natural eco-friendly substrates for temperature sensors, resulting in less hazardous electronic waste, as well as sensor interfaces on aesthetically pleasing surfaces.}, added-at = {2024-09-26T09:56:32.000+0200}, author = {Khaanghah, Niloofar Saeedzadeh and Krik, Soufiane and de Souza Oliveira, Hugo and Carrasco-Pena, Alejandro and Ciocca, Manuela and Petti, Luisa and Haller, Michael and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/242200394a3b9542d3859bb73e45846bd/nikomu}, booktitle = {2024 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS61194.2024.10603740}, interhash = {e5aa98546186fe8ec5a43cacd3bef54e}, intrahash = {42200394a3b9542d3859bb73e45846bd}, issn = {2832-8256}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2024-09-26T09:56:32.000+0200}, title = {Thin-Film Thermistor Temperature Sensors on Animal-Based Substrates}, year = 2024 } - C. Choi, S. Bansal, J. Hardwick, N. Münzenrieder, M. K. Tiwari, and S. Subramanian, “A magnetically actuated dynamic labyrinthine transmissive ultrasonic metamaterial,” Communications materials, vol. 5, iss. 1, p. 3, 2024.
[Bibtex]@article{Choi2024, abstract = {Currently, space-coiling acoustic metamaterials are static, requiring manual reconfiguration for sound-field modulation. Here, we introduce an approach to enable active reconfiguration, using standalone dynamic space-coiling unit cells called dynamic meta-bricks. Unlike their static counterparts, these meta-bricks, house an actuatable soft robotic-inspired magnetorheological elastomeric flap. This flap operates like a switch to directly control the transmitted ultrasound. For scalability, we present a hybrid stacking method, which vertically combines static and dynamic meta-bricks. This allows us to form a surface-integrated metasurface through concatenating variations of either fully static or hybrid stacks. By actuating dynamic metasurface sections, we experimentally demonstrate accurate modulation of $\lambda$/4 (≈2{\thinspace}mm) between two acoustic twin traps. We shift a levitated bead between the traps, validating that full-array operational dynamicity is achievable with partial, localised actuation. This work showcases the synergy between active and passive reconfigurability, opening possibilities to develop multifunctional metamaterials with additional degrees of freedom in design and control.}, added-at = {2024-09-26T09:55:22.000+0200}, author = {Choi, Christabel and Bansal, Shubhi and Hardwick, James and M{\"u}nzenrieder, Niko and Tiwari, Manish K. and Subramanian, Sriram}, biburl = {https://www.bibsonomy.org/bibtex/2804cc7e03b143e515daa275548388bd7/nikomu}, day = 05, doi = {10.1038/s43246-023-00438-4}, interhash = {1d24c710c81630fcbd4f2b10dbbb4d07}, intrahash = {804cc7e03b143e515daa275548388bd7}, issn = {2662-4443}, journal = {Communications Materials}, keywords = {myown}, month = jan, number = 1, pages = 3, timestamp = {2024-09-26T09:55:22.000+0200}, title = {A magnetically actuated dynamic labyrinthine transmissive ultrasonic metamaterial}, volume = 5, year = 2024 } - N. Münzenrieder, L. Petti, G. A. Salvatore, and G. Cantarella, “Route toward sustainable oxide tfts: does thin film oxide technology offer a pathway toward more sustainable electronics?,” Ieee electron devices magazine, vol. 2, iss. 2, pp. 23-34, 2024.
[Bibtex]@article{10577524, abstract = {Wearable, flexible, lightweight, and large-area electronics, able to adapt to arbitrary shapes, is a recent technology that promises to integrate sensing and data processing capabilities into everyday objects. This will allow connecting the digital and the physical worlds we live in and enable new innovative applications such as intuitive interfaces and smart textiles for continuous health and safety monitoring. Different technologies, including devices based on organic semiconductors and conventional silicon, are used to develop such wearable systems, however, devices made from novel oxide-based semiconductors currently have one of the best changes to result in electronic systems with sufficient electrical performance on flexible and large-area substrates. Yet, these exciting possibilities come at a price. If all the objects and surfaces around us are equipped with electronic sensor systems, these objects themselves transform into electronic devices, which in turn would massively increase the amount of electronic waste at the end of their lifetime. The same is true for plastic waste as currently most unobtrusive electronics are fabricated on polymer substrates. Furthermore, electronics that are operated near the human body must be safe and biocompatible. The perfect solution for these problems would be to fabricate electronics using environmentally friendly materials and processes, and to guarantee that the electronic components, after fulfilling their intended task, dissolve into their basic constituents, which are then entirely passive or safely absorbed into the nutrient cycle of our environment. Such transient and bioresorbable behavior has been demonstrated for several types of devices but is an underdeveloped approach in the field of oxide semiconductors. Here, motivations and challenges to combine the excellent electrical and mechanical properties of flexible oxide electronics with the environmental friendliness of bioresorbable electronics are explored. This is done by using the most important active building block of such electronics, namely, the TFT, as a model device (Figure 1). Besides assessing the various definitions of biocompatibility and environmental friendliness used in today’s research, the available classes of suitable materials and their impact in the electrical and environmental domain are described. Finally, an evaluation of how such materials can be integrated into working oxide transistors and which performance levels are achievable by these first examples of sustainable oxide TFTs is presented.}, added-at = {2024-09-26T09:53:50.000+0200}, author = {Münzenrieder, Niko and Petti, Luisa and Salvatore, Giovanni A. and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/2eee9f92bc299bf713c500a681ff38298/nikomu}, doi = {10.1109/MED.2024.3357657}, interhash = {d3f00acbf3a2958f6c44b46eb239220c}, intrahash = {eee9f92bc299bf713c500a681ff38298}, issn = {2832-7691}, journal = {IEEE Electron Devices Magazine}, keywords = {myown}, month = {June}, number = 2, pages = {23-34}, timestamp = {2024-09-26T09:53:50.000+0200}, title = {Route Toward Sustainable Oxide TFTs: Does Thin Film Oxide Technology Offer a Pathway Toward More Sustainable Electronics?}, volume = 2, year = 2024 }
2023
- F. Catania, N. Saeedzadeh Khaanghah, D. Corsino, H. S. de Oliveira, A. Carrasco-Pena, K. Ishida, T. Meister, F. Ellinger, G. Cantarella, and N. Münzenrieder, “Ac performance tunability of flexible bottom-gate ingazno tfts by an additional top-gate contact,” Ieee transactions on electron devices, vol. 70, iss. 12, pp. 6359-6363, 2023.
[Bibtex]@article{10288483, abstract = {This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of ${f}_{\,\text {T}}$ and ${f}_{\,\text {MAX}}$ with a maximum relative tuning up to 130% for ${f}_{\,\text {T}}$ and 170% for ${f}_{\,\text {MAX}}$ . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.}, added-at = {2023-12-21T09:25:19.000+0100}, author = {Catania, Federica and Saeedzadeh Khaanghah, Niloofar and Corsino, Dianne and Oliveira, Hugo de Souza and Carrasco-Pena, Alejandro and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/270ea20508dad638f139e251268071b74/nikomu}, doi = {10.1109/TED.2023.3323914}, interhash = {1e078a4fe11e0c4381f87a5a0ee4daed}, intrahash = {70ea20508dad638f139e251268071b74}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = dec, number = 12, pages = {6359-6363}, timestamp = {2023-12-21T09:25:19.000+0100}, title = {AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact}, volume = 70, year = 2023 } - N. J. Kumar, A. Johnson, R. Cobden, G. Valsamakis, J. Gristock, A. Pouryazdan, D. Roggen, and N. Münzenrieder, “A flexible inductive sensor for non-invasive arterial pulse measurement,” in 2023 ieee sensors, 2023, pp. 1-4.
[Bibtex]@inproceedings{10324884, abstract = {Arterial pulse measurement is a crucial indicator of cardiovascular health and prevailing techniques such as resistive force sensors, capacitive sensors and pulse oximeters possess challenges in wearability, continuous monitoring, and user comfort. In this paper, we present the development of a novel inductive sensor for non-invasive arterial pulse measurement. The proposed sensor incorporates high-permeability magnetic fillers into a flexible silicone based polymeric matrix. The sensor operates on the principle, that the permeability of the material changes in response to mechanical stress and possess high sensitivity. The experimental results revealed that the sensor demonstrates high linearity and sensitivity. The measured heart rate is compared to a standard clinical pulse oximeter (error $< 15\%$). Furthermore, its flexibility and form factor make it suitable for integration into wearable devices for continuous monitoring.}, added-at = {2023-12-21T09:23:38.000+0100}, author = {Kumar, Nimal Jagadeesh and Johnson, Alexander and Cobden, Robert and Valsamakis, George and Gristock, J.Gene and Pouryazdan, Arash and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/21f521cfc7e12b7ee8aea11a21e693c54/nikomu}, booktitle = {2023 IEEE SENSORS}, doi = {10.1109/SENSORS56945.2023.10324884}, interhash = {e8d3d1a42e9c85c203f2a7ef3040e824}, intrahash = {1f521cfc7e12b7ee8aea11a21e693c54}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-12-21T09:23:38.000+0100}, title = {A Flexible Inductive Sensor for Non-Invasive Arterial Pulse Measurement}, year = 2023 } - N. S. Khaanghah, H. S. de Oliveira, A. Carrasco-Pena, G. Cantarella, M. Haller, N. Rapagnani, A. van Bezooijen, M. Nippa, and N. Münzenrieder, "Stone-based substrates for thin-film thermistor temperature sensors," in 2023 ieee sensors, 2023, pp. 1-4.
[Bibtex]@inproceedings{10325074, abstract = {This work reports on the potential of using stone-based substrates including marble, brick, stone paper, and Limex paper for the fabrication of thin-film sensors, in particular thermistors. The thermistors were fabricated by 100 nm Cu and 30 nm InGaZnO sputtered thin-films with the exception of the Limex substrate where the optimized InGaZnO layer turned out to be 50 nm. The resistance of these thermistors at room temperature varied significantly, with values of 65 kΩ, 125 kΩ, 400 kΩ, and 1 kΩ observed for marble, brick, and the two stone papers, respectively. The characterization of the thermistors' performance was carried out within a temperature range of 25 °C to 80 °C. The two flexible thermistors, stone paper, and Limex, showed larger hysteresis. The brick thermistor showed the largest sensitivity. Moreover, the marble and stone paper demonstrated stable behavior in the cycling test. Additionally, the flexible stone paper thermistor showed an increase in resistance as the bending radius decreased up to 25 mm. As a result of the findings, stone-based materials have the potential to be used as natural substrates for temperature sensors.}, added-at = {2023-12-21T09:22:10.000+0100}, author = {Khaanghah, Niloofar Saeedzadeh and Oliveira, Hugo de Souza and Carrasco-Pena, Alejandro and Cantarella, Giuseppe and Haller, Michael and Rapagnani, Nicholas and van Bezooijen, Aart and Nippa, Michael and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/214a2a4ce7096a4b27b054da9b453a767/nikomu}, booktitle = {2023 IEEE SENSORS}, doi = {10.1109/SENSORS56945.2023.10325074}, interhash = {9922acb700dd93760813d53c7b0e9546}, intrahash = {14a2a4ce7096a4b27b054da9b453a767}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-12-21T09:22:32.000+0100}, title = {Stone-Based Substrates for Thin-Film Thermistor Temperature Sensors}, year = 2023 } - F. Catania, A. H. Lanthaler, A. Carrasco-Pena, G. Cantarella, and N. Münzenrieder, "Conformable thin-film temperature sensors on heat-shrinkable substrate for irregular surfaces," in 2023 ieee sensors, 2023, pp. 1-4.
[Bibtex]@inproceedings{10325310, abstract = {Electronics integration in ergonomic devices requires high conformability and mechanical flexibility. Here, a fast and cost-effective approach for compliant thin-film resistive temperature sensors and thermistors is presented. The fabrication is performed on a heat-shrinkable substrate, allowing the sensors to conform to unconventional and irregular surfaces. The effect of shrinkage on the dimensions and the electrical performance of the devices is analyzed, proving that the heat-induced shrinking process does not compromise the devices' functionality, even when crumpled or wrapped onto irregular surfaces. The thermal response of the shrunk sensors in the temperature range from 25°C to 60°C shows a linear response and stable performance with a sensitivity of 2.2 ×10−3°C−1and 1.8 × 10−2°C−1for resistive sensors and thermistors, respectively, during the heating and cooling processes, suggesting the suitability of this method for the development of highly adaptable sensing devices on complex surfaces.}, added-at = {2023-12-21T09:13:42.000+0100}, author = {Catania, Federica and Lanthaler, Albert Heinrich and Carrasco-Pena, Alejandro and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/26826d8173ab2c89a03fdf08aac6afca8/nikomu}, booktitle = {2023 IEEE SENSORS}, doi = {10.1109/SENSORS56945.2023.10325310}, interhash = {ea5b1888127413aec0de0ed45c7fb179}, intrahash = {6826d8173ab2c89a03fdf08aac6afca8}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-12-21T09:13:42.000+0100}, title = {Conformable Thin-Film Temperature Sensors on Heat-Shrinkable Substrate for Irregular Surfaces}, year = 2023 } - H. D. S. Oliveira, F. Catania, A. H. Lanthaler, A. Carrasco-Pena, G. Cantarella, and N. Münzenrieder, "Substrate-free transfer of large-area ultra-thin electronics," Advanced electronic materials, vol. 9, iss. 9, p. 2201281, 2023.
[Bibtex]@article{Oliveira_2023, added-at = {2023-09-29T10:24:21.000+0200}, author = {Oliveira, Hugo De Souza and Catania, Federica and Lanthaler, Albert Heinrich and Carrasco-Pena, Alejandro and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/202e2ae4c92497511d18009f3ec84afb4/nikomu}, doi = {10.1002/aelm.202201281}, interhash = {04ee52327fe869e3664a67e468dd7d88}, intrahash = {02e2ae4c92497511d18009f3ec84afb4}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = apr, number = 9, pages = 2201281, publisher = {Wiley}, timestamp = {2023-11-15T15:51:25.000+0100}, title = {Substrate-Free Transfer of Large-Area Ultra-Thin Electronics}, url = {https://doi.org/10.1002%2Faelm.202201281}, volume = 9, year = 2023 } - G. Cantarella, F. Catania, D. Corsino, and N. Münzenrieder, "Unobtrusive thin-film devices and sustainable green electronics," in 2023 ieee international flexible electronics technology conference (ifetc), 2023, pp. 1-3.
[Bibtex]@inproceedings{cantarella2023unobtrusive, added-at = {2023-09-29T10:22:08.000+0200}, author = {Cantarella, Giuseppe and Catania, Federica and Corsino, Dianne and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2e72acb71fc7eef5f9b270d4bf279f324/nikomu}, booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC57334.2023.10254853}, interhash = {0d89bf05eee55f682669e38c3fa162e2}, intrahash = {e72acb71fc7eef5f9b270d4bf279f324}, keywords = {myown}, month = {August}, pages = {1-3}, publisher = {IEEE}, timestamp = {2023-09-29T10:22:08.000+0200}, title = {Unobtrusive Thin-Film Devices and Sustainable Green Electronics}, url = {https://doi.org/10.1109/IFETC57334.2023.10254853}, year = 2023 } - A. H. Lanthaler, F. Catania, H. D. S. Oliveira, C. Beltrami, A. Carrasco-Pena, M. Haller, N. Münzenrieder, and G. Cantarella, "Thin-film temperature sensor on flexible peek fabric," in 2023 ieee international flexible electronics technology conference (ifetc), 2023, pp. 1-3.
[Bibtex]@inproceedings{lanthaler2023thinfilm, added-at = {2023-09-29T10:19:41.000+0200}, author = {Lanthaler, Albert Heinrich and Catania, Federica and Oliveira, Hugo De Souza and Beltrami, Carlos and Carrasco-Pena, Alejandro and Haller, Michael and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/257260e1678e7761c386fa4ba29652f11/nikomu}, booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC57334.2023.10254939}, interhash = {ee838e202e9ee59bd69e1e16af5eac40}, intrahash = {57260e1678e7761c386fa4ba29652f11}, keywords = {myown}, month = {August}, pages = {1-3}, publisher = {IEEE}, timestamp = {2023-09-29T10:19:41.000+0200}, title = {Thin-Film Temperature Sensor on Flexible PEEK Fabric}, url = {https://doi.org/10.1109/IFETC57334.2023.10254939}, year = 2023 } - D. C. Corsino, E. Bestelink, F. Catania, R. A. Sporea, N. Münzenrieder, and G. Cantarella, "In-ga-zn-o source-gated transistors with 3nm sio2 tunnel layer on a flexible polyimide substrate," in 2023 ieee international flexible electronics technology conference (ifetc), 2023, pp. 1-3.
[Bibtex]@inproceedings{noauthororeditor, added-at = {2023-09-29T10:14:18.000+0200}, author = {Corsino, Dianne C. and Bestelink, Eva and Catania, Federica and Sporea, Radu A. and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/26202e400ffb77bada0ec8febe6aca2fa/nikomu}, booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC57334.2023.10254818}, interhash = {e62014f692092c64c66b924a4c6c9171}, intrahash = {6202e400ffb77bada0ec8febe6aca2fa}, keywords = {myown}, month = {August}, pages = {1-3}, publisher = {IEEE}, timestamp = {2023-09-29T10:14:18.000+0200}, title = {In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate}, url = {https://doi.org/10.1109/IFETC57334.2023.10254818}, year = 2023 } - A. Carrasco-Pena, F. Catania, M. Haller, M. Nippa, G. Canterella, and N. Münzenrieder, "Flexible thin-film temperature sensors on gelatin-based biodegradable substrates for the development of green electronics," in 2023 ieee international conference on flexible and printable sensors and systems (fleps), 2023, pp. 1-4.
[Bibtex]@inproceedings{10220431, abstract = {The rapid growth in usage of disposable single-use plastics is posing a problem for the environment and the ecosystems of the planet. Many efforts are being put together to reduce the impact coming from these polymers by developing environmentally-friendly approaches that substitute traditional methods of fabrication and materials for thin-film electronics. Using biodegradable materials for the development of substrates for single-use electronics is a promising approach towards this goal. In this work, two types of gelatin substrates were developed, one being gelatin-glycerol, and the other being gelatin-emulsifier, to tune their degradation properties without compromising their capability for thin-film electronics fabrication, with degradation time of 15 days and 5 days, respectively. As a demonstration, thin-film temperature sensors were fabricated on the substrates and their response was analyzed over a temperature range of 5 °C-60 °C. The temperature coefficient of resistance of the sensors fabricated on the gelatin-glycerol and gelatin-emulsifier was 0.0024 °C−1 and 0.0046 °C−1, respectively. The use of green materials to create substrates for thin-film electronics applications is paving the way for the reduction of plastic usage and the harmful impact that the presence of these polymers have in nature.}, added-at = {2023-09-12T14:49:47.000+0200}, author = {Carrasco-Pena, Alejandro and Catania, Federica and Haller, Michael and Nippa, Michael and Canterella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2e3959d9b97c2ea9419ec62708581b59a/nikomu}, booktitle = {2023 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS57599.2023.10220431}, interhash = {d00623d04272a182b7bf9bce2be7ee58}, intrahash = {e3959d9b97c2ea9419ec62708581b59a}, issn = {2832-8256}, keywords = {myown}, month = {July}, pages = {1-4}, timestamp = {2023-09-12T14:49:47.000+0200}, title = {Flexible Thin-Film Temperature Sensors on Gelatin-Based Biodegradable Substrates for the Development of Green Electronics}, url = {https://ieeexplore.ieee.org/document/10220431/}, year = 2023 } - A. Johnson, N. J. Kumar, A. Pouryazdan, and N. Münzenrieder, "Capacitive pressure sensors utilizing a conductive human fingerprint microstructure," in 2023 ieee international conference on flexible and printable sensors and systems (fleps), 2023, pp. 1-4.
[Bibtex]@inproceedings{10220400, abstract = {Pressure based tactile sensing is an essential part of how humans interact with their environment. Taking inspiration from a structure naturally optimized to sense force, the human fingertip, this work presents a fingerprint design carbon-black and ecoflex based capacitive pressure sensor. The finagrprint sensor shows a sensitivity improved from $2.94 \times 10^{-4}{\mathrm{P}}\mathrm{a}^{=1}$ to $1.48 \times 10^{-3}\text{Pa}^{-1}$ when compared to an unstructured reference device. The sensor is furthermore compared to simulations and evaluated under receptive loading cycles.}, added-at = {2023-09-12T14:49:06.000+0200}, author = {Johnson, Alexander and Kumar, Nimal Jagadeesh and Pouryazdan, Arash and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2593c36086c3a935a5e2dd9a2f1aa9f1c/nikomu}, booktitle = {2023 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS57599.2023.10220400}, interhash = {152e19c1bd2928720933aae3ecdf74c7}, intrahash = {593c36086c3a935a5e2dd9a2f1aa9f1c}, issn = {2832-8256}, keywords = {myown}, month = {July}, pages = {1-4}, timestamp = {2023-09-12T14:49:06.000+0200}, title = {Capacitive Pressure Sensors Utilizing a Conductive Human Fingerprint Microstructure}, url = {https://ieeexplore.ieee.org/document/10220400/}, year = 2023 } - N. J. Kumar, A. Johnson, G. Valsamakis, G. J. Gristock, D. Roggen, and N. Münzenrieder, "A comparison of high dielectric fillers for a stitchable flexible capacitive sensor," in 2023 ieee international conference on flexible and printable sensors and systems (fleps), 2023, pp. 1-4.
[Bibtex]@inproceedings{10220416, abstract = {Flexible capacitive sensors are pervasive across multiple sectors, from healthcare to robotics. Although they offer better linearity and lower hysteresis, they require a large surface area to provide suitable sensitivity. One way of addressing this is through dielectric fillers. However, finding the right amount and type of filler is a challenge: the same material that improves a sensor's sensitivity can also cause detrimental changes in physical parameters. This paper describes how low-cost, high performing dielectric fillers - strontium titanate and barium titanate - can be introduced into Ecoflex to form a soft, sew-able sensor; and presents the concentrations of dielectric materials which offer both a good dielectric response, and the ability to pour the material and form the device. It highlights the advantages of barium titanate - which shows a better percentage dielectric constant increase - unless applications require the use of fine detail or cross-axis strain. The linearity, hysteresis, sensitivity, and cross-axis sensitivity of the resulting flexible, stitch-able sensor are discussed.}, added-at = {2023-09-12T14:48:27.000+0200}, author = {Kumar, Nimal J. and Johnson, Alexander and Valsamakis, George and Gristock, J. Gene and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/291f86729ae33fd742c438dcf76bc623b/nikomu}, booktitle = {2023 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS57599.2023.10220416}, interhash = {42ae83183e21f3299abe4c9fb7406c97}, intrahash = {91f86729ae33fd742c438dcf76bc623b}, issn = {2832-8256}, keywords = {myown}, month = {July}, pages = {1-4}, timestamp = {2023-09-12T14:48:27.000+0200}, title = {A Comparison of High Dielectric Fillers for a Stitchable Flexible Capacitive Sensor}, url = {https://ieeexplore.ieee.org/document/10220416/}, year = 2023 } - A. Gurusekaran, H. de Souza Oliveira, V. Benedetti, M. Baratieri, N. Münzenrieder, M. Ciocca, P. Lugli, and L. Petti, "Autonomous shape memory hinge for space applications powered via solar energy," in 2023 ieee 10th international workshop on metrology for aerospace (metroaerospace), 2023, pp. 13-18.
[Bibtex]@inproceedings{10190042, abstract = {This work demonstrates a proof-of-concept autonomous hinge for the deployment of satellite radiators. The hinge utilizes the shape memory effect (SME), thanks to the use of a shape memory alloy (SMA). First SMA wires based on Nickel-Titanium are embedded into an Ecoflex polymeric material and subsequently solidified. The bending of the hinge is induced by a thermal stimulus provided by a silver-based heater printed on a $10\mu m$ thick Polyether ether ketone (PEEK) substrate and embedded on top of the SMA structure. Heater powering is achieved via commercially available solar cells. Upon heating, the hinge transforms from a flat horizontal configuration to a curved bent one with approximately 45° bending angle on both sides of the hinge. In this work, we first describe the working principle of the hinge, to then show how the hinge is designed and prototyped, along with the realization of the proof-of-concept-device. Finally, laboratory testing of the autonomous hinge prototype is shown to investigate its motion and energy consumption performance. Upon reducing the temperature of the SMA wires by switching off the heater, the hinge returns to its original position with a 10° bending angle. The results prove that the hinge is capable of bending and unbending depending on the temperature, while being powered through solar cells using e.g., space solar radiation.}, added-at = {2023-09-12T14:47:24.000+0200}, author = {Gurusekaran, Arvind and de Souza Oliveira, Hugo and Benedetti, Vittoria and Baratieri, Marco and Münzenrieder, Niko and Ciocca, Manuela and Lugli, Paolo and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/221df5d3b1f216667a47ea7039ad0e59e/nikomu}, booktitle = {2023 IEEE 10th International Workshop on Metrology for AeroSpace (MetroAeroSpace)}, doi = {10.1109/MetroAeroSpace57412.2023.10190042}, interhash = {154cd95df8a0d105270cd1c578406dc0}, intrahash = {21df5d3b1f216667a47ea7039ad0e59e}, issn = {2575-7490}, keywords = {myown}, month = {June}, pages = {13-18}, timestamp = {2023-09-12T14:47:24.000+0200}, title = {Autonomous shape memory hinge for space applications powered via solar energy}, url = {https://ieeexplore.ieee.org/document/10190042/}, year = 2023 } - N. S. Khaanghah, D. Corsino, F. Catania, J. Costa, G. Cantarella, and N. Münzenrieder, "Influence of semiconductor island geometry on the ac performance of flexible ingazno tfts," Ieee electron device letters, vol. 44, iss. 5, pp. 773-776, 2023.
[Bibtex]@article{10064308, abstract = {The AC performance of flexible TFTs sufferers from parasitics caused by tolerances needed for the fabrication on free-standing plastic foils. In this context, the semiconductor island can either be wider or narrower than the source/drain contacts. Traditionally, the second configuration is expected to result in faster TFTs as the total gate overlap area is smaller. However, here it is shown that $\mathrm {2.5~ \mu \text {m} }$ long flexible InGaZnO TFTs with wide semiconductor islands exhibit better frequency performance such as a ${f}_{T}$ of $\mathrm {26.1~ \text {M} \text {Hz} }$ (compared to ${f}_{T}$ of $\mathrm {13.8~ \text {M} \text {Hz} }$ of TFTs with narrow semiconductor islands). This effect is confirmed for flat and bend TFTs and is caused by current spreading in the semiconductor islands, as well as the frequency dependency of the gate capacitance.}, added-at = {2023-05-22T12:54:17.000+0200}, author = {Khaanghah, Niloofar Saeedzadeh and Corsino, Dianne and Catania, Federica and Costa, Júlio and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/23d13cbb5d0ecb97506b3b0663ca99c88/nikomu}, doi = {10.1109/LED.2023.3254609}, interhash = {4956e71f65ed2e20f6d1909d7592339b}, intrahash = {3d13cbb5d0ecb97506b3b0663ca99c88}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = may, number = 5, pages = {773-776}, timestamp = {2023-05-22T12:54:17.000+0200}, title = {Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs}, url = {https://ieeexplore.ieee.org/document/10064308/}, volume = 44, year = 2023 } - L. A. García-García, A. Johnson, P. M. Kreitmair, P. Lugoda, A. Pouryazdan, D. Roggen, and N. Münzenrieder, "Biocompatible gel-free coconut-oil and carbon black electrodes for ecg and respiration measurements," Ieee sensors journal, vol. 23, iss. 20, pp. 23980-23987, 2023.
[Bibtex]@article{10057212, abstract = {The current state of the art in telemedicine has increased the interest in long term monitoring of physiological and bioelectric signals. This motivated the development of materials and techniques for the fabrication of biocompatible, user and environmentally friendly alternatives to conventional resistive wet electrodes. Here we report a method for the fabrication of dry flexible and stretchable electrodes based on Coconut-Oil and Carbon Black for the monitoring of electrophysiological signals without conductive gels. The highly stretchable material shows a specific resistance ρ down to 33.2±12.3Ωm, high conformability, and a stretchability up to 1500%. The epidermal electrodes were used to record Electrocardiographic (ECG) signals and measure respiration in a 3-lead configuration and compared to commercial wet electrodes. Even after being elongated by 100% for 100 stretch/release cycles, a reliable recording of the QRS-complex is demonstrated without the need for any contact enhancer or substances that cause skin reaction, demonstrating the potential use of this material for long term ECG monitoring applications.}, added-at = {2023-05-22T12:53:50.000+0200}, author = {García-García, Leonardo A. and Johnson, Alexander and Kreitmair, Paul M. and Lugoda, Pasindu and Pouryazdan, Arash and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/206ff1bc824b394c29cdbe8837b321d88/nikomu}, doi = {10.1109/JSEN.2023.3249159}, interhash = {e0ed179ccbbc7eddaf9ca5bac9571a4a}, intrahash = {06ff1bc824b394c29cdbe8837b321d88}, issn = {1558-1748}, journal = {IEEE Sensors Journal}, keywords = {myown}, month = {October}, number = 20, pages = { 23980 - 23987}, timestamp = {2023-10-18T14:23:49.000+0200}, title = {Biocompatible Gel-free Coconut-Oil and Carbon Black electrodes for ECG and Respiration measurements}, url = {https://ieeexplore.ieee.org/document/10057212/}, volume = 23, year = 2023 } - G. Cantarella, M. Madagalam, I. Merino, C. Ebner, M. Ciocca, A. Polo, P. Ibba, P. Bettotti, A. Mukhtar, B. Shkodra, A. S. Inam, A. J. Johnson, A. Pouryazdan, M. Paganini, R. Tiziani, T. Mimmo, S. Cesco, N. Münzenrieder, L. Petti, N. Cohen, and P. Lugli, "Laser-induced, green and biocompatible paper-based devices for circular electronics," Advanced functional materials, vol. 33, iss. 17, p. 2210422, 2023.
[Bibtex]@article{Cantarella_2023, added-at = {2023-05-22T12:52:51.000+0200}, author = {Cantarella, Giuseppe and Madagalam, Mallikarjun and Merino, Ignacio and Ebner, Christian and Ciocca, Manuela and Polo, Andrea and Ibba, Pietro and Bettotti, Paolo and Mukhtar, Ahmad and Shkodra, Bajramshahe and Inam, AKM Sarwar and Johnson, Alexander J. and Pouryazdan, Arash and Paganini, Matteo and Tiziani, Raphael and Mimmo, Tanja and Cesco, Stefano and Münzenrieder, Niko and Petti, Luisa and Cohen, Nitzan and Lugli, Paolo}, biburl = {https://www.bibsonomy.org/bibtex/250430cafcaa6feb1ccc926113c092305/nikomu}, doi = {10.1002/adfm.202210422}, interhash = {dc90b7f431ba3a41c87986d19a8c5124}, intrahash = {50430cafcaa6feb1ccc926113c092305}, journal = {Advanced Functional Materials}, keywords = {myown}, month = feb, number = 17, pages = 2210422, publisher = {Wiley}, timestamp = {2023-08-23T10:50:23.000+0200}, title = {Laser-Induced, Green and Biocompatible Paper-Based Devices for Circular Electronics}, url = {https://doi.org/10.1002%2Fadfm.202210422}, volume = 33, year = 2023 } - N. J. Kumar, A. Johnson, D. Roggen, and N. Münzenrieder, "A flexible capacitance strain sensor with stitched contact terminals," Advanced materials technologies, vol. 8, iss. 2, 2023.
[Bibtex]@article{Kumar_2023, added-at = {2023-05-22T12:52:15.000+0200}, author = {Kumar, Nimal Jagadeesh and Johnson, Alexander and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/28ad087c2eebee5624ac0cf24b20719fa/nikomu}, doi = {10.1002/admt.202200410}, interhash = {d3e3fd63744505c3738ebe6efa13562b}, intrahash = {8ad087c2eebee5624ac0cf24b20719fa}, journal = {Advanced Materials Technologies}, keywords = {myown}, number = 2, publisher = {Wiley}, timestamp = {2023-05-22T12:52:15.000+0200}, title = {A Flexible Capacitance Strain Sensor with Stitched Contact Terminals}, url = {https://doi.org/10.1002%2Fadmt.202200410}, volume = 8, year = 2023 } - H. de Souza Oliveira, N. S. Khaanghah, V. Y. Han, A. Carrasco-Pena, A. Ion, M. Haller, G. Cantarella, and N. Münzenrieder, "Permeable thermistor temperature sensors based on porous melamine foam," Ieee sensors letters, vol. 7, iss. 5, p. 2500904, 2023.
[Bibtex]@article{10111009, abstract = {Flexible sensors and electronics have gained much attention in recent years. They are especially interesting due to their abilities to conform to static and dynamic surfaces while keeping their functionality. These characteristics make them relevant for a wide range of applications, from health care and fitness monitoring to soft robotics. In this work, we go beyond simple mechanical flexibility and present a lightweight and permeable flexible sensor utilizing melamine foam as a substrate. The foam is coated with metallic copper (Cu) and semiconductive Indium-Gallium-Zinc-Oxide (InGaZnO) to form a thermistor-type temperature sensor. The sensor showed a very stable response when cycling the temperature between 25 °C and 51 °C, exhibiting a maximum sensitivity of $-01.6 \%^{\circ }\mathrm{C}^{-1}$, a permeability of $366.6\,{\rm g\,m^{-2}\,h^{-1}}$ at 24 °C, and a maximum resistance variation of $-2.9\%\mathrm{RH}^{-1}$ when varying the relative humidity from 40% to 70%. The device also remained fully functional even after being bent to a radius of 5 mm.}, added-at = {2023-05-22T12:51:19.000+0200}, author = {de Souza Oliveira, Hugo and Khaanghah, Niloofar Saeedzadeh and Han, Violet Yinuo and Carrasco-Pena, Alejandro and Ion, Alexandra and Haller, Michael and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2b87430ef7b60626dd1352616a5729488/nikomu}, doi = {10.1109/LSENS.2023.3271590}, interhash = {f4b03c3efeb599f20ab5a8eba514a021}, intrahash = {b87430ef7b60626dd1352616a5729488}, issn = {2475-1472}, journal = {IEEE Sensors Letters}, keywords = {myown}, month = may, number = 5, pages = 2500904, timestamp = {2023-08-23T10:48:54.000+0200}, title = {Permeable Thermistor Temperature Sensors Based on Porous Melamine Foam}, url = {https://ieeexplore.ieee.org/document/10111009/}, volume = 7, year = 2023 } - N. S. Khaanghah, H. S. de Oliveira, R. Riaz, F. Catania, M. A. C. Angeli, L. Petti, G. Cantarella, and N. Münzenrieder, "Silicone/carbon black-filled elastomer-based self-healing strain sensor," Ieee sensors letters, vol. 7, iss. 5, p. 2501204, 2023.
[Bibtex]@article{10120916, abstract = {The recent interest in flexible and stretchable strain sensors reflects their potential applications in various fields, including healthcare monitoring, soft robotics, and electronic skins. In addition to high stretchability and excellent sensing properties, self-healability is also a highly desirable property of stretchable strain sensors as it allows increasing their lifespan and, thus, reduce electronic waste and cost. In this letter, a self-healing silicone tape is introduced as a self-healable flexible substrate that to fabricate a resistive strain sensor. The sensor has an average gauge factor of 34.6$\pm$0.26 up to 50% stretch. Moreover, the sensor can be cut and healed without the use of any adhesive materials or heating. After cutting, the healed sensor still has an average gauge factor of 2.0$\pm$0.006 up to 4% stretch, a stable response over 150 stretch-release cyclic tests, and breaks only after 18% of applied tensile strain.}, added-at = {2023-05-22T12:50:47.000+0200}, author = {Khaanghah, Niloofar Saeedzadeh and Oliveira, Hugo de Souza and Riaz, Raheel and Catania, Federica and Angeli, Martina Aurora Costa and Petti, Luisa and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/27456c89a0b3a75db189e389783d69ff5/nikomu}, doi = {10.1109/LSENS.2023.3273618}, interhash = {56a3a644bf2095cb52000eb47e4f6643}, intrahash = {7456c89a0b3a75db189e389783d69ff5}, issn = {2475-1472}, journal = {IEEE Sensors Letters}, keywords = {myown}, month = may, number = 5, pages = 2501204, timestamp = {2023-08-23T10:47:49.000+0200}, title = {Silicone/Carbon Black-Filled Elastomer-Based Self-Healing Strain Sensor}, url = {https://ieeexplore.ieee.org/document/10120916/}, volume = 7, year = 2023 }
2022
- A. Carrasco Pena, B. Unger, N. Münzenrieder, and M. Nippa, "Bridging the gaps of technology transfer," Südtiroler wirtschaftszeitung, vol. 42, iss. 22, p. 19, 2022.
[Bibtex]@article{carrascopena2022bridging, abstract = {New inventions and new developments often struggle to be recognized as beneficial by practitioners. But why is it so difficult to transfer academic research into industry applications? How to recognize the potential of research–a practical example from South Tyrol.}, added-at = {2023-05-26T09:10:08.000+0200}, author = {Carrasco Pena, Alejandro and Unger, Benedikt and Münzenrieder, Niko and Nippa, Michael}, biburl = {https://www.bibsonomy.org/bibtex/29a101e150768acbc35bf8b4514b3f25e/nikomu}, doi = {https://swz.it/bridging-the-gaps-of-technology-transfer/}, interhash = {3777d435a4b7b59994f754c3b1cdacd7}, intrahash = {9a101e150768acbc35bf8b4514b3f25e}, journal = {Südtiroler Wirtschaftszeitung}, keywords = {myown}, month = nov, number = 22, pages = 19, timestamp = {2023-05-26T09:10:08.000+0200}, title = {Bridging the Gaps of Technology Transfer}, url = {https://swz.it/bridging-the-gaps-of-technology-transfer/}, volume = 42, year = 2022 } - D. Corsino, F. Catania, K. Ishida, T. Meister, F. Ellinger, G. Cantarella, and N. Münzenrieder, "Monolithic integration, performance, and comparison of self-aligned and conventional igzo thin-film transistors on a flexible substrate," Ieee journal on flexible electronics, vol. 1, iss. 3, pp. 159-166, 2022.
[Bibtex]@article{9904604, abstract = {Flexible electronics, most prominently thin-film transistors (TFTs) on plastic substrates, are considered the prime building block for the realization of innovative wearable systems. Two of the currently most successful fabrication processes of transistors on free-standing polymer foils are large-area-compatible devices structured by conventional UV lithography and high-speed transistors realized by self-alignment. Here, both processes, based on InGaZnO (IGZO) technology, are combined for the first time. This not only demonstrates their compatibility, but also showcases the differences between the resulting devices. Concerning the geometry, TFTs with the same nominal designed channel length of 1.5μm exhibit a real channel length of 1.5μm (self-aligned) and 4.5μm (conventional). Furthermore, the integrated side-by-side fabrication enables the electrical comparison of both types of TFTs excluding external factors. While all TFTs exhibit similar threshold voltages around $\mathrm {0 V}$ and excellent on/off ratios of $\approx \mathrm {e10 }$ , conventional TFTs are easier to fabricate and have comparably higher mobilities up to 16cm2V−1s−1. At the same time, self-aligned TFTs demonstrate better ac performance, demonstrating a maximum oscillation frequency of 216 MHz. This integration shows new possibilities for the realization of complex systems made from building blocks optimized for reliability and speed.}, added-at = {2023-05-22T12:49:44.000+0200}, author = {Corsino, Dianne and Catania, Federica and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2640ada2646975a2977df4f4f857c5b50/nikomu}, doi = {10.1109/JFLEX.2022.3210492}, interhash = {a7bc5b770006ccc72ea4881c23dea00d}, intrahash = {640ada2646975a2977df4f4f857c5b50}, issn = {2768-167X}, journal = {IEEE Journal on Flexible Electronics}, keywords = {myown}, month = {July}, number = 3, pages = {159-166}, timestamp = {2023-05-22T12:49:44.000+0200}, title = {Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate}, url = {https://ieeexplore.ieee.org/document/9904604/}, volume = 1, year = 2022 } - G. Cantarella, F. Catania, N. Münzenrieder, and L. Petti, "Flexible, scalable and buckled electronics based on oxide thin-film transistors," in 2022 ieee international flexible electronics technology conference (ifetc), 2022, pp. 1-2.
[Bibtex]@inproceedings{9948509, abstract = {The field of flexible electronics has rapidly expanded over the last decades, providing a new class of electronic devices and systems with unique features, such as lightweight, mechanical flexibility, and biocompatibility. To evaluate the scalability of our thin-film technology for systems realization, as well as for the development of highly flexible devices, two parallel strategies are explored. First, the stability of oxide thin-film transistors (TFTs) is investigated under different environmental conditions (temperature and humidity variation). Afterwards, InGaZnO-based TFTs are integrated with Perovskite Light Emitting Diodes (PeLEDs), to evaluate the technological scalability for flexible active display. Secondly, the employment of stretchable Polydimethylsiloxane (PDMS), acting as a stretchable substrate, in combination with the induction of customized wrinkles in the electronics stack, is used to allow the realization of bendable and stretchable TFTs and circuits.}, added-at = {2023-05-22T12:49:00.000+0200}, author = {Cantarella, Giuseppe and Catania, Federica and Münzenrieder, Niko and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/252e815204b9e72f2cb9a011976056f00/nikomu}, booktitle = {2022 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC53656.2022.9948509}, interhash = {9e7cac51d3ba7ba2ef32d0df93178755}, intrahash = {52e815204b9e72f2cb9a011976056f00}, keywords = {myown}, month = aug, pages = {1-2}, timestamp = {2023-05-22T12:49:00.000+0200}, title = {Flexible, Scalable and Buckled Electronics based on Oxide Thin-Film Transistors}, url = {https://ieeexplore.ieee.org/document/9948509/}, year = 2022 } - A. Carrasco-Pena, F. Catania, G. Cantarella, M. Haller, M. Nippa, and N. Münzenrieder, "Flexible thin-film temperature sensors on upcycled polyethylene terephthalate (pet) substrates for the circularity of economy," in 2022 ieee sensors, 2022, pp. 1-4.
[Bibtex]@inproceedings{9967058, abstract = {The use of plastics for daily life applications keeps rising rapidly making these polymers a material of choice in many fields, including electronics. Nevertheless, the pollution generated from the fabrication, usage and disposal of plastics has become an environmental problem that is impacting most of the ecosystems in our planet. Efforts are being made to reduce the impact plastics have in nature, with recycling and upcycling as promising approaches that not only reduce the harm plastics to the biosphere, but also help in developing a circular model for the usage of these organic polymers. In this work, polyethylene terephthalate (PET) was recycled from commercial beverage bottles to create a sustainable substrate for the fabrication of thin-film electronics. As an application for the substrate, temperature sensors were developed and their response was analyzed over a temperature range from 5 °C to 65 °C with a temperature coefficient resistance $(\alpha)$ = 0.002 °C−1, used to measure the temperature of commercial bottle beverages. The development of these substrates provides a second life to the PET from bottles, paving the way for the sustainable and circular usage of plastic as substrates for thin-film electronic devices and a reduction of the negative effects their presence and footprint have in nature.}, added-at = {2023-05-22T12:46:32.000+0200}, author = {Carrasco-Pena, Alejandro and Catania, Federica and Cantarella, Giuseppe and Haller, Michael and Nippa, Michael and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2c46334fd08fa4a9397ca67745f71fd07/nikomu}, booktitle = {2022 IEEE Sensors}, doi = {10.1109/SENSORS52175.2022.9967058}, interhash = {572fe56af994e5ca82b4cd71cd623efe}, intrahash = {c46334fd08fa4a9397ca67745f71fd07}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-05-22T12:46:32.000+0200}, title = {Flexible Thin-Film Temperature Sensors on Upcycled Polyethylene Terephthalate (PET) Substrates for the Circularity of Economy}, url = {https://ieeexplore.ieee.org/document/9967058/}, year = 2022 } - H. de Souza Oliveira, A. Nijkoops, M. Ciocca, A. Carrasco–Peña, L. Petti, G. Cantarella, and N. Münzerieder, "Flexible auxetic structure as substrates for resistive pressure sensors," in 2022 ieee sensors, 2022, pp. 1-4.
[Bibtex]@inproceedings{9967254, abstract = {The recent advances on flexible electronics and sensors have required the development of superior substrates that can withstand different levels and types of deformation, while keeping the integrity and functionality of the sensing materials. This work deals with the development of a zero Poisson's ratio (ZPR) auxetic structure integrated with a pressure sensing material. The ZPR structure can endure 15% of shearing deformation combined with 15% of stretch, presents a Poisson's ratio of 0.061 at a maximum longitudinal deformation of 76%. The resistive pressure sensing material presents a maximum sensitivity of (2.21x104 ± 3.59x103) MΩ/kg, an absolute resistance of around 20 MΩ, and a response time of 50 ms.}, added-at = {2023-05-22T12:46:07.000+0200}, author = {de Souza Oliveira, Hugo and Nijkoops, Annelot and Ciocca, Manuela and Carrasco–Peña, Alejandro and Petti, Luisa and Cantarella, Giuseppe and Münzerieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/212f373171928d7687714ae3dd8d6781c/nikomu}, booktitle = {2022 IEEE Sensors}, doi = {10.1109/SENSORS52175.2022.9967254}, interhash = {992b4859ad8662b53259fe26abfbd25e}, intrahash = {12f373171928d7687714ae3dd8d6781c}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {01-04}, timestamp = {2023-05-22T12:46:07.000+0200}, title = {Flexible Auxetic Structure as Substrates for Resistive Pressure Sensors}, url = {https://ieeexplore.ieee.org/document/9967254/}, year = 2022 } - F. Catania, M. Ahmad, D. Corsino, N. Saeedzadeh Khaanghah, L. Petti, N. Münzenrieder, and G. Cantarella, "Ac performance of flexible transparent ingazno thin-film transistors and circuits," Ieee transactions on electron devices, vol. 69, iss. 9, pp. 4930-4935, 2022.
[Bibtex]@article{9843931, abstract = {Transparent transistors are mainly investigated in view of their integration in displays and their employment in wearable electronics where the integration of flexible and imperceptible systems is an important requirement. Here, the fabrication and ac performance of flexible InGaZnO thin-film transistors (TFTs) and circuits are presented to evaluate their suitability for analog sensor conditioning applications. Functional oxides are employed to guarantee the transparency of the device, while their fabrication processes are suitable to directly realize electronics on a flexible polyimide substrate. The TFTs show state-of-the-art performance with a field-effect mobility $\mu _{\text {eff}}\,\,= {19}.{39}\,\, \text {cm}^{{2}} \text {V}^{-1} \text {s}^{-1}$ and functionality while bent to radii as low as 5 mm. Reliable scattering parameters measurements confirm transit frequencies as high as $f_{t}~\approx ~7.84$ MHz. Simultaneously, nMOS ring oscillators (ROs) show functionality at supply voltage ${V} _{\text {DD}}$ ranging from 1.75 to 12.25 V with a maximum oscillation frequency ${f} _{\text {osc}}\,\,=132.9$ kHz. Finally, common-source amplifiers (CSAs) exhibit the voltage gains up to 10.7 dB, the cutoff frequencies up to 10.8 kHz, and a power consumption down to $4.4~\mu \text{W}$ .}, added-at = {2023-05-22T12:38:36.000+0200}, author = {Catania, Federica and Ahmad, Mukhtar and Corsino, Dianne and Saeedzadeh Khaanghah, Niloofar and Petti, Luisa and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/21c12ab20736fcbbc142412ec3e1da30a/nikomu}, doi = {10.1109/TED.2022.3193012}, interhash = {d6dccf9a862a4a51e81710206d4fd727}, intrahash = {1c12ab20736fcbbc142412ec3e1da30a}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {Sep.}, number = 9, pages = {4930-4935}, timestamp = {2023-05-22T12:38:36.000+0200}, title = {AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits}, url = {https://ieeexplore.ieee.org/document/9843931/}, volume = 69, year = 2022 } - T. Meister, K. Ishida, C. Carta, N. Münzenrieder, and F. Ellinger, "Flexible electronics for wireless communication: a technology and circuit design review with an application example," Ieee microwave magazine, vol. 23, iss. 4, pp. 24-44, 2022.
[Bibtex]@article{9724627, abstract = {There is a practical gap between conventional rigid electronics and bendable items from daily life, such as paper, tape, textiles, and the human body. This space can be bridged by flexible transistor technologies, which typically offer bendability, a light weight, ultrathin dimensions, transparency, some stretchability, suitability for large areas, and a low cost. Thanks to the continuous increase of the maximal operation frequency of flexible electronics, wireless communication is becoming one of the promising enablers for many new applications and is widely studied. For a long time, electronics have advanced in terms of speed, power consumption, integration density, and cost. In particular, reductions in feature sizes, which lead to improvements in integration density, are expected to keep slowing down, e.g. due to thermal noise constraints. This trend has long been predicted, and it has motivated the investigation of multiple alternative electronic technologies, including mechanically flexible ones.}, added-at = {2023-05-22T12:37:53.000+0200}, author = {Meister, Tilo and Ishida, Koichi and Carta, Corrado and Münzenrieder, Niko and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/2403e78a3ac96431e26e06e2d85e31c66/nikomu}, doi = {10.1109/MMM.2021.3136684}, interhash = {88cefead2807d73ada6d1c5df7cb142d}, intrahash = {403e78a3ac96431e26e06e2d85e31c66}, issn = {1557-9581}, journal = {IEEE Microwave Magazine}, keywords = {myown}, month = {April}, number = 4, pages = {24-44}, timestamp = {2023-05-22T12:37:53.000+0200}, title = {Flexible Electronics for Wireless Communication: A Technology and Circuit Design Review With an Application Example}, url = {https://ieeexplore.ieee.org/document/9724627/}, volume = 23, year = 2022 } - F. Catania, H. de Souza Oliveira, P. Lugoda, G. Cantarella, and N. Münzenrieder, "Thin-film electronics on active substrates: review of materials, technologies and applications," Journal of physics d: applied physics, vol. 55, iss. 32, p. 323002, 2022.
[Bibtex]@article{Catania_2022, added-at = {2023-05-22T12:37:21.000+0200}, author = {Catania, Federica and de Souza Oliveira, Hugo and Lugoda, Pasindu and Cantarella, Giuseppe and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/25d97a3bcc314b1473d004f41e5f43cd6/nikomu}, doi = {10.1088/1361-6463/ac6af4}, interhash = {00bd9908f4dd368eac34074518165676}, intrahash = {5d97a3bcc314b1473d004f41e5f43cd6}, journal = {Journal of Physics D: Applied Physics}, keywords = {myown}, month = may, number = 32, pages = 323002, publisher = {{IOP} Publishing}, timestamp = {2023-05-22T12:37:21.000+0200}, title = {Thin-film electronics on active substrates: review of materials, technologies and applications}, url = {https://doi.org/10.1088%2F1361-6463%2Fac6af4}, volume = 55, year = 2022 } - F. Catania, H. D. S. Oliveira, M. C. A. Angeli, M. Ciocca, S. Pané, N. Münzenrieder, and G. Cantarella, "The influence of climate conditions and on-skin positioning on InGaZnO thin-film transistor performance," Frontiers in electronics, vol. 2, 2022.
[Bibtex]@article{Catania_2022, added-at = {2023-05-22T12:36:40.000+0200}, author = {Catania, Federica and Oliveira, Hugo De Souza and Angeli, Martina A. Costa and Ciocca, Manuela and Pan{\'{e}}, Salvador and Münzenrieder, Niko and Cantarella, Giuseppe}, biburl = {https://www.bibsonomy.org/bibtex/2ce0d9c11161d4193df9d590c3a30a690/nikomu}, description = {Frontiers | The Influence of Climate Conditions and On-Skin Positioning on InGaZnO Thin-Film Transistor Performance}, doi = {10.3389/felec.2021.786601}, interhash = {ebc4dafddfc6d2083f3abe08eb7f5bc7}, intrahash = {ce0d9c11161d4193df9d590c3a30a690}, journal = {Frontiers in Electronics}, keywords = {myown}, month = jan, publisher = {Frontiers Media {SA}}, timestamp = {2023-05-22T13:07:23.000+0200}, title = {The Influence of Climate Conditions and On-Skin Positioning on {InGaZnO} Thin-Film Transistor Performance}, url = {https://doi.org/10.3389%2Ffelec.2021.786601}, volume = 2, year = 2022 } - L. A. Garcia-Garcia, G. Valsamakis, N. Münzenrieder, and D. Roggen, "Lessons learned in developing sensorised textiles to capture body shapes," in Pervasive computing technologies for healthcare, Cham, 2022, p. 365–380.
[Bibtex]@inproceedings{10.1007/978-3-030-99194-4_23, abstract = {Motivated by the need to replace plaster casts or image acquisition approaches to capture body shapes to create orthoses, we explored the feasibility of using smart textile sleeve enhanced with arrays of stretch and bend sensors. The sensors' data is interpreted by an ad-hoc optimisation-based shape inference algorithm to come up with a digitised 3D model of the body part around which the sleeve is worn. This paper summarises the state of the art in the field, before illustrating the approach we followed and lesson's learned in developing smart textile sleeves and the associated data processing algorithms. The unique approach we followed was to realise from the ground up the sensing elements, their integration into a textile, and the associated data processing. In the process, we developed a technology to create stretch and bend sensing elements using carbon black and ecoflex, improving curvature detection; we also found ways to interconnect large arrays of such sensors, digitise their data, and developed several mathematical optimisation models for the inference of the sleeve shape from the sensor readings.}, added-at = {2023-05-22T12:35:56.000+0200}, address = {Cham}, author = {Garcia-Garcia, Leonardo A. and Valsamakis, George and Münzenrieder, Niko and Roggen, Daniel}, biburl = {https://www.bibsonomy.org/bibtex/2ba987a82d19dc8744cd18a4151a9f2c2/nikomu}, booktitle = {Pervasive Computing Technologies for Healthcare}, description = {Lessons Learned in Developing Sensorised Textiles to Capture Body Shapes | SpringerLink}, doi = {10.1007/978-3-030-99194-4_23}, editor = {Lewy, Hadas and Barkan, Refael}, interhash = {10e99acd86de7510cb1eedeb8efcbb0a}, intrahash = {ba987a82d19dc8744cd18a4151a9f2c2}, isbn = {978-3-030-99194-4}, keywords = {myown}, pages = {365--380}, publisher = {Springer International Publishing}, timestamp = {2023-05-22T13:10:37.000+0200}, title = {Lessons Learned in Developing Sensorised Textiles to Capture Body Shapes}, year = 2022 }
2021
- A. Pouryazdan, J. C. Costa, L. Garcia-Garcia, P. Lugoda, R. J. Prance, H. Prance, and N. Münzenrieder, "Design and characterisation of a non-contact flexible sensor array for electric potential imaging applications," Ieee sensors journal, vol. 21, iss. 23, pp. 26328-26336, 2021.
[Bibtex]@article{9371752, abstract = {Capacitive non-contact imaging of electric fields and potentials with micro-metre resolution can provide relevant insights into material characterisation, structural analysis, electrostatic charge imaging and bio-sensing applications. However, scanning electric potential microscopes have been confined to rigid and single-probe devices, making them slow, prone to mechanical damage and complex to fabricate. In this work, we present the design and characterisation of a novel 5-element flexible array of electric potential probes with spatial resolution down to 20 $\mu \text{m}$ to speed up the scanning time. This was achieved by combining flexible thin-film probes for active guarding and shielding with state-of-the art discrete conditioning circuits. The potential of this approach is showcased by using the fabricated array to image latent fingerprints deposited on an insulating surface by contact electrification, obtain the surface topography of conductive samples and to visualise local dielectric variations.}, added-at = {2023-05-22T12:34:58.000+0200}, author = {Pouryazdan, Arash and Costa, Júlio C. and Garcia-Garcia, Leonardo and Lugoda, Pasindu and Prance, Robert J. and Prance, Helen and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2f4a114741fe0f9dad89f4d074b1f7a9b/nikomu}, doi = {10.1109/JSEN.2021.3064276}, interhash = {0ec50409ae8a826aefae12bc67af3080}, intrahash = {f4a114741fe0f9dad89f4d074b1f7a9b}, issn = {1558-1748}, journal = {IEEE Sensors Journal}, keywords = {myown}, month = dec, number = 23, pages = {26328-26336}, timestamp = {2023-05-22T12:34:58.000+0200}, title = {Design and Characterisation of a Non-Contact Flexible Sensor Array for Electric Potential Imaging Applications}, url = {https://ieeexplore.ieee.org/document/9371752/}, volume = 21, year = 2021 } - H. de Souza Oliveira, F. Catania, G. Cantarella, V. Benedetti, M. Baratieri, and N. Münzenrieder, "Recycled carbon-based strain sensors: an ecofriendly approach using char and coconut oil," in 2021 ieee international flexible electronics technology conference (ifetc), 2021, pp. 53-55.
[Bibtex]@inproceedings{9580526, abstract = {Bio-compatible high stretchable strain sensors can be applied in several areas ranging from engineering to medicine. Among many efforts in developing new sensors, there is a growing demand for eco-friendly devices characterized by a minimum environmental impact and a low cost. This work deals with the development and analysis of a biocompatible, eco-friendly, and unexpensive strain sensor, easily manufacturable, consisting of natural coconut oil, and recycled char, the solid residue obtained after the gasification of biomass. The results demonstrate an average gauge factor of (23.2 ± 2.5), with a linear response until 80% strain, a higher hysteresis occurring between strain values of 25% 40% and a stable and reliable response after 250 stretch/release cycles.}, added-at = {2023-05-22T12:34:37.000+0200}, author = {de Souza Oliveira, Hugo and Catania, Federica and Cantarella, Giuseppe and Benedetti, Vittoria and Baratieri, Marco and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2c4b33c2291d29596cd4561ede3c95379/nikomu}, booktitle = {2021 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC49530.2021.9580526}, interhash = {c2c652412211645a9415ccef128b8dd3}, intrahash = {c4b33c2291d29596cd4561ede3c95379}, keywords = {myown}, month = aug, pages = {0053-0055}, timestamp = {2023-05-22T12:34:37.000+0200}, title = {Recycled Carbon-based Strain Sensors: An Ecofriendly Approach using Char and Coconut Oil}, url = {https://ieeexplore.ieee.org/document/9580526/}, year = 2021 } - S. Vasquez, M. Ahmad, M. Petrelli, M. C. Angeli, R. Riaz, A. Douaki, G. Cantarella, N. Münzenrieder, P. Lugli, and L. Petti, "Thermal stability of flexible igzo/ag schottky diodes on cellulose microfiber paper substrate," in 2021 ieee international flexible electronics technology conference (ifetc), 2021, pp. 67-69.
[Bibtex]@inproceedings{9580504, abstract = {In this work, Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) were fabricated on cellulose microfiber paper substrate. Silver lines used as the Schottky barrier were printed, in parallel to thermally evaporated Cr/Au ohmic contact, using a dispense printer. The morphological and electrical characteristics of the devices are presented. The fabricated diodes exhibited rectification ratios ranging from 3.4 to 34.9 at ±1V with ON voltages that range from 1.1V to 1.4 V, for device lengths (Ag to Au distance) from 145 µm to 894 µm. The diodes were characterized in a temperature range between 25°C and 80°C. They showed a decrease of the ON current when increasing temperature, which is mainly attributed to the change of the cellulose microstructure. Indeed, an opposite of the ON current behavior was registered when the diode was realized on a polyimide substrate. The realized flexible paper-based diodes offer a potential promising choice for printed environmental-friendly electronics.}, added-at = {2023-05-22T12:34:04.000+0200}, author = {Vasquez, Sahira and Ahmad, Mukhtar and Petrelli, Mattia and Angeli, Martina Costa and Riaz, Raheel and Douaki, Ali and Cantarella, Giuseppe and Münzenrieder, Niko and Lugli, Paolo and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/2c513a55d42dc8b90ca61c0a49d486f9a/nikomu}, booktitle = {2021 IEEE International Flexible Electronics Technology Conference (IFETC)}, doi = {10.1109/IFETC49530.2021.9580504}, interhash = {a3a1f788ee381384a5e142cd89c2704d}, intrahash = {c513a55d42dc8b90ca61c0a49d486f9a}, keywords = {myown}, month = aug, pages = {0067-0069}, timestamp = {2023-05-22T12:34:04.000+0200}, title = {Thermal Stability of Flexible IGZO/Ag Schottky Diodes on Cellulose Microfiber Paper Substrate}, url = {https://ieeexplore.ieee.org/document/9580504/}, year = 2021 } - D. K. Tan, N. Münzenrieder, M. Maniruzzaman, and A. Nokhodchi, "A low-cost method to prepare biocompatible filaments with enhanced physico-mechanical properties for fdm 3d printing," Current drug delivery, vol. 8, iss. 16, pp. 700-711, 2021.
[Bibtex]@article{tanlowcost, added-at = {2023-05-22T12:33:13.000+0200}, author = {Tan, Deck K. and Münzenrieder, Niko and Maniruzzaman, Mohammed and Nokhodchi, Ali}, biburl = {https://www.bibsonomy.org/bibtex/26fb56eb9b8a094373873214df2bd321c/nikomu}, description = {A Low-Cost Method to Prepare Biocompatible Filaments with Enhance...: Ingenta Connect}, doi = {10.2174/1567201817999201103195456}, id = {info:doi/10.2174/1567201817999201103195456}, interhash = {15aa1e360f4e5ff90855782b56d1ee74}, intrahash = {6fb56eb9b8a094373873214df2bd321c}, journal = {Current Drug Delivery}, keywords = {myown}, number = 16, pages = {700-711}, publisher = {Bentham Science Publishers}, timestamp = {2023-05-22T13:07:47.000+0200}, title = {A Low-Cost Method to Prepare Biocompatible Filaments with Enhanced Physico-Mechanical Properties for FDM 3D Printing}, type = {Text}, url = {https://www.ingentaconnect.com/content/ben/cdd/2021/00000018/00000006/art00006}, volume = 8, year = 2021 } - L. A. Garcia-Garcia, G. Valsamakis, P. Kreitmair, N. Munzenrieder, and D. Roggen, "Inferring complex textile shape from an integrated carbon black-infused ecoflex-based bend and stretch sensor array," in Adjunct proceedings of the 2021 ACM international joint conference on pervasive and ubiquitous computing and proceedings of the 2021 ACM international symposium on wearable computers, 2021.
[Bibtex]@inproceedings{Garcia_Garcia_2021, added-at = {2023-05-22T12:31:34.000+0200}, author = {Garcia-Garcia, Leonardo Azael and Valsamakis, George and Kreitmair, Paul and Munzenrieder, Niko and Roggen, Daniel}, biburl = {https://www.bibsonomy.org/bibtex/24f906de8dda5532871c47357e1e6c242/nikomu}, booktitle = {Adjunct Proceedings of the 2021 {ACM} International Joint Conference on Pervasive and Ubiquitous Computing and Proceedings of the 2021 {ACM} International Symposium on Wearable Computers}, description = {Inferring Complex Textile Shape from an Integrated Carbon Black-infused Ecoflex-based Bend and Stretch Sensor Array | Adjunct Proceedings of the 2021 ACM International Joint Conference on Pervasive and Ubiquitous Computing and Proceedings of the 2021 ACM International Symposium on Wearable Computers}, doi = {10.1145/3460418.3479347}, interhash = {551b687afff88cebc8befc37d3f44cca}, intrahash = {4f906de8dda5532871c47357e1e6c242}, keywords = {myown}, month = sep, publisher = {{ACM}}, timestamp = {2023-05-22T13:07:52.000+0200}, title = {Inferring Complex Textile Shape from an Integrated Carbon Black-infused Ecoflex-based Bend and Stretch Sensor Array}, url = {https://doi.org/10.1145%2F3460418.3479347}, year = 2021 } - G. Cantarella, N. Münzenrieder, L. Petti, K. Ishida, T. Meister, C. Carta, F. Ellinger, and R. Hopf, "Mechanical and electrical design strategies for flexible ingazno circuits," in 2021 28th international conference on mixed design of integrated circuits and system, 2021, pp. 41-44.
[Bibtex]@inproceedings{9497560, abstract = {Thin-film transistors (TFTs) and circuits based on oxide semiconductors fabricated on flexible plastic foils and stretchable substrates are reported. Reliable fabrication protocols, using InGaZnO as n-type semiconductor, in combination with different design strategies, aiming at the improvement of both the electrical performance and the mechanical stability of such electronics, are discussed. First, simulation models are used to guide the fabrication of operational amplifiers and logic circuits on flexible polyimide foil, using an additional third metal layer for the interconnections. Thanks to the reduced parasitic resistances and capacitances, the resulting circuits have yielded improved electrical performances with respect to a two-metals architecture. In particular, an increase of 5.7% of the Gain-Bandwidth-Product (GBWP) for operational amplifiers, and an average reduction of 22% of the rise times, fall times and propagation delays for digital circuits, were achieved. In parallel, Finite-Element Modeling (FEM) has supported the design of engineered stretchable substrates shaped with pillar (or mesa) structures. The reduction of the strain experienced by the electronics, located on the mesa surfaces, during stretching, bending, and twisting, resulted in highly flexible digital circuits with functionality up to 20% elongation.}, added-at = {2023-05-22T12:30:59.000+0200}, author = {Cantarella, Giuseppe and Münzenrieder, Niko and Petti, Luisa and Ishida, Koichi and Meister, Tilo and Carta, Corrado and Ellinger, Frank and Hopf, Raoul}, biburl = {https://www.bibsonomy.org/bibtex/28efc58bb510e743a921f6275edac9735/nikomu}, booktitle = {2021 28th International Conference on Mixed Design of Integrated Circuits and System}, doi = {10.23919/MIXDES52406.2021.9497560}, interhash = {96f14a57f208f1bac3c674a5dffc1666}, intrahash = {8efc58bb510e743a921f6275edac9735}, keywords = {myown}, month = {June}, pages = {41-44}, timestamp = {2023-05-22T12:30:59.000+0200}, title = {Mechanical and Electrical Design Strategies for Flexible InGaZnO Circuits}, url = {https://ieeexplore.ieee.org/document/9497560/}, year = 2021 } - A. Pouryazdan, R. J. Prance, H. Prance, J. C. Costa, and N. Münzenrieder, "Non-contact thin-film sheet conductance measurement based on the attenuation of low frequency electric potentials," Journal of physics d: applied physics, vol. 54, iss. 41, p. 414003, 2021.
[Bibtex]@article{Pouryazdan_2021, added-at = {2023-05-22T12:30:12.000+0200}, author = {Pouryazdan, Arash and Prance, Robert J and Prance, Helen and Costa, J{\'{u}}lio C and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2673b69b99cc77613c703af409d38e40d/nikomu}, doi = {10.1088/1361-6463/ac1372}, interhash = {e42bdfd174b1085ce25dd94b9dbc7d44}, intrahash = {673b69b99cc77613c703af409d38e40d}, journal = {Journal of Physics D: Applied Physics}, keywords = {myown}, month = jul, number = 41, pages = 414003, publisher = {{IOP} Publishing}, timestamp = {2023-05-22T12:30:12.000+0200}, title = {Non-contact thin-film sheet conductance measurement based on the attenuation of low frequency electric potentials}, url = {https://doi.org/10.1088%2F1361-6463%2Fac1372}, volume = 54, year = 2021 } - L. A. García-García, P. M. Kreitmair, A. J. Johnson, J. C. Costa, A. Pouryazdan, P. Lugoda, D. Roggen, and N. Münzenrieder, "Soft gel-free ecg electrodes based on biocompatible coconut-oil and carbon black," in 2021 ieee international conference on flexible and printable sensors and systems (fleps), 2021, pp. 1-4.
[Bibtex]@inproceedings{9469731, abstract = {Recent developments in telemedicine have caused significant interest in the prolonged monitoring of bioelectric signals. This drives the search for easy-to-use, biocompatible, and environmentally friendly alternatives to conventional resistive wet electrodes. Here we demonstrate the use of Coconut-Oil and Carbon Black based stretchable dry electrodes to monitor electrophysiological signals without the need for conductive gels. The developed material is embedded into an elastomer matrix, exhibits a specific resistance ρ of 33.2 12.3 Ω m, high conformability, and a stretchability up to 1500±%. The realised epidermal electrodes were used to record Electrocardiographic (ECG) signals in a 3-lead configuration and compared to commercial wet electrodes. Even after being elongated by 100 % for 100 stretch/release cycles, a reliable recording of the QRS-complex is demonstrated without the need for any contact enhancing or skin irritating substances, proving its potential use in long term ECG monitoring applications.}, added-at = {2023-05-22T12:30:03.000+0200}, author = {García-García, Leonardo A. and Kreitmair, Paul M. and Johnson, Alexander J. and Costa, Júlio C. and Pouryazdan, Arash and Lugoda, Pasindu and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2efce4ce8a1ec8f88a68cfc5cb734a7b6/nikomu}, booktitle = {2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS51544.2021.9469731}, interhash = {9dcebedc4c0ec53af241a13e11510b3b}, intrahash = {efce4ce8a1ec8f88a68cfc5cb734a7b6}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2023-05-22T12:30:03.000+0200}, title = {Soft Gel-free ECG electrodes based on Biocompatible Coconut-Oil and Carbon Black}, url = {https://ieeexplore.ieee.org/document/9469731/}, year = 2021 } - B. Shkodra, M. Petrelli, M. Costa Angeli, A. Sarwar Inam, E. Avancini, N. Münzenrieder, P. Lugli, and L. Petti, "Flexible carbon nanotube-based electrolyte-gated field-effect transistor for spermidine detection," in 2021 ieee international conference on flexible and printable sensors and systems (fleps), 2021, pp. 1-4.
[Bibtex]@inproceedings{9469788, abstract = {In this work, we realized a flexible electrolyte-gated field-effect transistor (EG-FET) based on a spray-coated semi-conducting single-walled carbon nanotube (SWCNTs) network. The device was functionalized with anti-spermidine antibodies for a specific detection of polyamine spermidine - a well-known chemical indicator of food quality. The spray-coated SWCNTs films were modified with a bifunctional molecule, which binds to the nanotubes via non-covalent π−π interactions and leaves a free NHS-ester group for amide coupling of the antibodies, ensuring controlled immobilization. Transfer and output curves were recorded for device characterization, showing a typical p-type behavior with an on–off ratio of 190 A/A and a threshold voltage around 0 V. The calibration curve of the fabricated EG-FET immunosensor shows a linear detection range for spermidine from 0.001 to 100 nM, with 99.83% coefficient of determination.}, added-at = {2023-05-22T12:29:21.000+0200}, author = {Shkodra, Bajramshahe and Petrelli, Mattia and Costa Angeli, Martina and Sarwar Inam, AKM and Avancini, Enrico and Münzenrieder, Niko and Lugli, Paolo and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/2d821338826a9f965ff8effd73272251a/nikomu}, booktitle = {2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS51544.2021.9469788}, interhash = {7bd7797aec525e2cc2f7842fd339468d}, intrahash = {d821338826a9f965ff8effd73272251a}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2023-05-22T12:29:21.000+0200}, title = {Flexible carbon nanotube-based electrolyte-gated field-effect transistor for spermidine detection}, url = {https://ieeexplore.ieee.org/document/9469788/}, year = 2021 } - D. K. Tan, A. Nokhodchi, and N. Münzenrieder, "Fabrication of flexible and transferable rtds via fused deposition modelling 3d printing," in 2021 ieee international conference on flexible and printable sensors and systems (fleps), 2021, pp. 1-4.
[Bibtex]@inproceedings{9469801, abstract = {Fused Deposition Modelling (FDM) 3D printing is a simple and cost-effective manufacturing method. This study investigates the capabilities of using FDM 3D printing to produce simple Resistance Temperature Detectors (RTDs) as temperature sensors. Two types of conductive PLA filaments were used: carbon black (CB) and graphene PLA filaments. The CB and graphene PLA sensors showed conductance of 0.0238 mS and 0.1042 mS respectively. When measuring the response of the sensors against a change in temperature ranging from 15 °C to 80 °C, the CB PLA sensor showed a sensitivity of 0.01416 ± 0.00004 °C-1 whereas the graphene PLA sensor had a sensitivity of 0.00498 ± 0.00004 °C-1. The 3D printed temperatures sensors showed good flexibility and stability, even after being transferred to different substrates.}, added-at = {2023-05-22T12:28:43.000+0200}, author = {Tan, Deck Khong and Nokhodchi, Ali and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2dbe643a991ebe236d4146064d3effbb9/nikomu}, booktitle = {2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS51544.2021.9469801}, interhash = {5b8e27b1e0c5eb443234e8cd9f3f512d}, intrahash = {dbe643a991ebe236d4146064d3effbb9}, keywords = {myown}, month = {June}, pages = {1-4}, timestamp = {2023-05-22T12:28:43.000+0200}, title = {Fabrication of Flexible and Transferable RTDs via Fused Deposition Modelling 3D Printing}, url = {https://ieeexplore.ieee.org/document/9469801/}, year = 2021 } - S. Vasquez, M. Petrelli, M. C. Angeli, J. Costa, E. Avancini, G. Cantarella, N. Münzenrieder, P. Lugli, and L. Petti, "Cost-effective, mask-less, and high-throughput prototyping of flexible hybrid electronic devices using dispense printing and conductive silver ink," in 2021 5th ieee electron devices technology & manufacturing conference (edtm), 2021, pp. 1-3.
[Bibtex]@inproceedings{9420858, abstract = {In this work, we demonstrate the advantages and the potentials of dispense printing (V-One, Voltera) for the realization of conductive contacts of flexible electronics. Printing parameters were optimized for Ag inks on different substrates (PCB, Si/SiO2 and polyimide), leading to straight homogeneous printed lines with minimum feature size of$159\pm 22\mu \mathrm{m}$ . Hybrid-manufactured Ag/InGaZnO Schottky diodes, with an average rectification ratio of 80 and an ON voltage of 0.63 V, were successfully demonstrated on flexible foils.}, added-at = {2023-05-22T12:28:16.000+0200}, author = {Vasquez, Sahira and Petrelli, Mattia and Angeli, Martina Costa and Costa, Julio and Avancini, Enrico and Cantarella, Giuseppe and Münzenrieder, Niko and Lugli, Paolo and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/2884956af72dd298c483f3d5000d917d1/nikomu}, booktitle = {2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)}, doi = {10.1109/EDTM50988.2021.9420858}, interhash = {d8c2bf6c83515ea691cc895768520d01}, intrahash = {884956af72dd298c483f3d5000d917d1}, keywords = {myown}, month = {April}, pages = {1-3}, timestamp = {2023-05-22T12:28:16.000+0200}, title = {Cost-effective, mask-less, and high-throughput prototyping of flexible hybrid electronic devices using dispense printing and conductive silver ink}, url = {https://ieeexplore.ieee.org/document/9420858/}, year = 2021 } - L. Petti, G. Cantarella, J. C. Costa, and N. S. Münzenrieder, "Bendable metal oxide thin-film transistors and circuits for analog electronics applications," in Oxide-based materials and devices XII, 2021.
[Bibtex]@inproceedings{Petti_2021, added-at = {2023-05-22T12:27:49.000+0200}, author = {Petti, Luisa and Cantarella, Giuseppe and Costa, Julio C. and Münzenrieder, Niko S.}, biburl = {https://www.bibsonomy.org/bibtex/283aef0a2a36cbacd559f4988317759b2/nikomu}, booktitle = {Oxide-based Materials and Devices {XII}}, doi = {10.1117/12.2586626}, editor = {Teherani, Ferechteh H. and Look, David C. and Rogers, David J.}, interhash = {1d019505f3029b00373821f12c5216af}, intrahash = {83aef0a2a36cbacd559f4988317759b2}, keywords = {myown}, month = mar, publisher = {{SPIE}}, timestamp = {2023-05-22T12:27:49.000+0200}, title = {Bendable metal oxide thin-film transistors and circuits for analog electronics applications}, url = {https://doi.org/10.1117%2F12.2586626}, year = 2021 } - A. Daus, C. J. McClellan, K. Schauble, J. C. Costa, R. W. Grady, L. Petti, G. Cantarella, N. S. Münzenrieder, and E. Pop, "Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2d semiconductor devices," in Oxide-based materials and devices XII, 2021.
[Bibtex]@inproceedings{Daus_2021, added-at = {2023-05-22T12:26:53.000+0200}, author = {Daus, Alwin and McClellan, Connor J. and Schauble, Kirstin and Costa, Julio C. and Grady, Ryan W. and Petti, Luisa and Cantarella, Giuseppe and Münzenrieder, Niko S. and Pop, Eric}, biburl = {https://www.bibsonomy.org/bibtex/2d5cacd85b56ad6320e123962f0eb27b8/nikomu}, booktitle = {Oxide-based Materials and Devices {XII}}, doi = {10.1117/12.2587997}, editor = {Teherani, Ferechteh H. and Look, David C. and Rogers, David J.}, interhash = {2c28ed9f22d92e66b91c3ed6fc8abc4a}, intrahash = {d5cacd85b56ad6320e123962f0eb27b8}, keywords = {myown}, month = mar, publisher = {{SPIE}}, timestamp = {2023-05-22T12:26:53.000+0200}, title = {Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices}, url = {https://doi.org/10.1117%2F12.2587997}, year = 2021 } - N. Münzenrieder, G. Cantarella, L. Petti, and J. Costa, "Oxide thin-film electronics for the front-end conditioning of flexible magnetic field sensors," in Tms 2021 150th annual meeting & exhibition, Cham, 2021, p. 294–302.
[Bibtex]@inproceedings{10.1007/978-3-030-65261-6_26, abstract = {Unobtrusive magneto-reception can enable innovative applications in diverse scenariosM{\"u}nzenrieder, Niko ranging from the interaction of humans with virtual objects to the controlledCantarella, Giuseppe movement of micro-robots. The required bio-compatible magnetic sensorSensor technology systems have to be cheap and able to conform to the movement of reconfigurable surfaces and biological tissue,Petti, Luisa while providing excellent performance. The key to realize such systems is the integration ofCosta, J{\'u}lio magnetic sensorsSensor technology with on-site conditioningConditioning electronics directly on large-area plastic substrates. In fact, ad-hoc optimized oxide thin-film transistorsThin-film transistors provide a technology platform which is not affected by mechanical deformation or magnetic fields and can hence be used to boost the performance of magnetic sensorSensor technology systems through front-end conditioning. Flexible oxide conditioning Conditioningcircuits provide voltage gains close to 50 dB at operation voltages down 1.7 V while bent to radii <4 mm. Fully flexible Co/Cu giant magnetoresistance sensorsSensor technology, Wheatstone bridges and amplifiers can be integrated on a single polymer foil and result in a 50 {\$}{\$}{\backslash}upmu {\$}{\$}$\mu$m-thin conformal system with a 25 V/V/kOe sensitivity.}, added-at = {2023-05-22T12:25:30.000+0200}, address = {Cham}, author = {Münzenrieder, Niko and Cantarella, Giuseppe and Petti, Luisa and Costa, J{\'u}lio}, biburl = {https://www.bibsonomy.org/bibtex/2e72357925e51c6ac0eec5ec3ddd5881c/nikomu}, booktitle = {TMS 2021 150th Annual Meeting {\&} Exhibition}, description = {Oxide Thin-Film Electronics for the Front-End Conditioning of Flexible Magnetic Field Sensors | SpringerLink}, doi = {10.1007/978-3-030-65261-6_26}, interhash = {af11c5fddd837b3dda3053d0a0198524}, intrahash = {e72357925e51c6ac0eec5ec3ddd5881c}, isbn = {978-3-030-65261-6}, keywords = {myown}, pages = {294--302}, publisher = {Springer International Publishing}, timestamp = {2023-05-24T22:12:31.000+0200}, title = {Oxide Thin-Film Electronics for the Front-End Conditioning of Flexible Magnetic Field Sensors}, url = {https://link.springer.com/chapter/10.1007/978-3-030-65261-6_26}, year = 2021 }
2020
- C. Choi, S. Bansal, N. Münzenrieder, and S. Subramanian, "Fabricating and assembling acoustic metamaterials and phononic crystals," Advanced engineering materials, vol. 23, iss. 2, p. 2000988, 2020.
[Bibtex]@article{Choi_2020, added-at = {2023-05-22T12:25:08.000+0200}, author = {Choi, Christabel and Bansal, Shubhi and Münzenrieder, Niko and Subramanian, Sriram}, biburl = {https://www.bibsonomy.org/bibtex/251186f0acd92dc6b4880fde219f9b10c/nikomu}, doi = {10.1002/adem.202000988}, interhash = {65beec2a2b88fee40d0b957030f04f3f}, intrahash = {51186f0acd92dc6b4880fde219f9b10c}, journal = {Advanced Engineering Materials}, keywords = {myown}, month = nov, number = 2, pages = 2000988, publisher = {Wiley}, timestamp = {2023-05-22T12:25:08.000+0200}, title = {Fabricating and Assembling Acoustic Metamaterials and Phononic Crystals}, url = {https://doi.org/10.1002%2Fadem.202000988}, volume = 23, year = 2020 } - P. Lugoda, J. C. Costa, L. A. Garcia-Garcia, A. Pouryazdan, Z. Jocys, F. Spina, J. Salvage, D. Roggen, and N. Münzenrieder, "Coco stretch: strain sensors based on natural coconut oil and carbon black filled elastomers," Advanced materials technologies, vol. 6, iss. 2, p. 2000780, 2020.
[Bibtex]@article{Lugoda_2020, added-at = {2023-05-22T12:24:42.000+0200}, author = {Lugoda, Pasindu and Costa, Julio C. and Garcia-Garcia, Leonardo A. and Pouryazdan, Arash and Jocys, Zygimantas and Spina, Filippo and Salvage, Jonathan and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2b2a9a06774cf94fb51a74472b5dfc5fc/nikomu}, doi = {10.1002/admt.202000780}, interhash = {6dd98e3a60001077c2e78ebc73f376c2}, intrahash = {b2a9a06774cf94fb51a74472b5dfc5fc}, journal = {Advanced Materials Technologies}, keywords = {myown}, month = dec, number = 2, pages = 2000780, publisher = {Wiley}, timestamp = {2023-05-22T12:24:42.000+0200}, title = {Coco Stretch: Strain Sensors Based on Natural Coconut Oil and Carbon Black Filled Elastomers}, url = {https://doi.org/10.1002%2Fadmt.202000780}, volume = 6, year = 2020 } - J. C. Costa, A. Pouryazdan, R. J. Prance, H. Prance, and N. Münzenrieder, "Flexible bootstrapped cascode system with feedback for capacitive through-substrate electric potential measurements with a 55 db relative gain," in 2020 ieee international electron devices meeting (iedm), 2020, p. 14.4.1-14.4.4.
[Bibtex]@inproceedings{9372123, abstract = {Measuring electric potentials using encapsulated flexible probes is advantageous especially when the signal source is comprised of soft and irregular organic tissues, such as the human brain or muscle fibers. However, the capacitive nature of encapsulated probes demands circuits with ultra-high input impedance and low 1/f noise, which are not trivially achieved using flexible transistors. Here, we show an a-IGZO based capacitive bootstrapped cascode buffer where the input impedance is actively controlled to allow capacitive electric potential measurements. By exploring different biasing schemes of the cascode element, we show a relative gain of 55 dB and a bandwidth between 450 Hz and 19 kHz.}, added-at = {2023-05-22T12:24:01.000+0200}, author = {Costa, J. C. and Pouryazdan, A. and Prance, R. J. and Prance, H. and Münzenrieder, N.}, biburl = {https://www.bibsonomy.org/bibtex/20c1eb47b8824704b1b68edda3c508e08/nikomu}, booktitle = {2020 IEEE International Electron Devices Meeting (IEDM)}, doi = {10.1109/IEDM13553.2020.9372123}, interhash = {4d3eedd98aa9c3f1a2f9ee23bcecd899}, intrahash = {0c1eb47b8824704b1b68edda3c508e08}, issn = {2156-017X}, keywords = {myown}, month = dec, pages = {14.4.1-14.4.4}, timestamp = {2023-05-22T12:24:01.000+0200}, title = {Flexible Bootstrapped Cascode System with Feedback for Capacitive Through-Substrate Electric Potential Measurements with a 55 dB Relative Gain}, url = {https://ieeexplore.ieee.org/document/9372123/}, year = 2020 } - A. Pouryazdan, J. C. Costa, F. Spina, R. J. Prance, H. Prance, and N. Münzenrieder, "Non-contact measurement of dc potentials with applications in static charge imaging," in 2020 ieee sensors, 2020, pp. 1-4.
[Bibtex]@inproceedings{9278841, abstract = {A non-contact capacitive DC voltage probing technique capable of measuring potential differences as low as 30 mV with a 1.5% accuracy is presented. The technique relies on measuring the voltage induced on a sensing conductor as result of moving it in the gradient of an electric field. This sensor achieved a sensitivity up to 197 mV s V-1. The influence of speed and separation between the sensing electrode and the source terminals are also investigated. In addition to empirical analysis, a physical model is developed to calibrate and describe the measurement technique mathematically. Due to the capacitive nature of the technique, the terminals of the voltage source under test can be either exposed to the sensing element or insulated. As well as non-contact measurements of DC potentials, this technique can be used to image the electrostatic charge distribution on insulating materials. An immediate application to this is the non-destructive imaging of latent fingerprints on insulating surfaces due to contact electrification. The presented technique is envisioned for applications such as battery production and quality monitoring, IC design and diagnostics, as well as forensic sciences.}, added-at = {2023-05-22T12:23:32.000+0200}, author = {Pouryazdan, Arash and Costa, Júlio C. and Spina, Filippo and Prance, Robert J. and Prance, Helen and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/28b4cda7450d9efa5e427065ed113c869/nikomu}, booktitle = {2020 IEEE SENSORS}, doi = {10.1109/SENSORS47125.2020.9278841}, interhash = {b269dd3cf9796fc0bab2932070158ef4}, intrahash = {8b4cda7450d9efa5e427065ed113c869}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-05-22T12:23:32.000+0200}, title = {Non-contact Measurement of DC Potentials with Applications in Static Charge Imaging}, url = {https://ieeexplore.ieee.org/document/9278841/}, year = 2020 } - L. A. García-García, J. C. Costa, P. Lugoda, D. Roggen, and N. Münzenrieder, "Copper wire based electrical contacts for direct interfacing of stretchable sensors," in 2020 ieee sensors, 2020, pp. 1-4.
[Bibtex]@inproceedings{9278749, abstract = {Stretchable sensors based on piezoresistive polymers enable new conformal and biocompatible wearables. However, physically interfacing such structures to create electrical contacts is still challenging. This is due to the localisation of stresses at the interface between soft polymers and metallic interconnections. Even if stretchable contacts or conditioning circuits are realised, there must be a rigid-soft interface to connect stretchable structures with conventional devices. Here, five ways to electrically connect soft Ecoflex based strain sensors are evaluated. The results show that a filament cable exhibits the most stable behaviour under cyclic loading of the contacts, while using a multi strand cable or a copper mesh results in lower contact resistance. In addition, loading forces from 0.27 N to 6.92 N are supported. Finally, stretchable piezoresistive strain sensors are fabricated using the 5 different contact methods. Employing customised interfaces with an optimal performance trade-off will help to establish reliable contacts with future stretchable electronics.}, added-at = {2023-05-22T12:23:01.000+0200}, author = {García-García, Leonardo A. and Costa, Júlio C. and Lugoda, Pasindu and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/21aeadd169ade1296f1f2e416efacaa79/nikomu}, booktitle = {2020 IEEE SENSORS}, doi = {10.1109/SENSORS47125.2020.9278749}, interhash = {fb869c566dbf95d72205071f1f3a51d1}, intrahash = {1aeadd169ade1296f1f2e416efacaa79}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-05-22T12:23:01.000+0200}, title = {Copper wire based electrical contacts for direct interfacing of stretchable sensors}, url = {https://ieeexplore.ieee.org/document/9278749/}, year = 2020 } - A. Pouryazdan, J. C. Costa, P. Lugoda, R. J. Prance, H. Prance, and N. Münzenrieder, "Flexible micro-scale sensor array for non-contact electric potential imaging," in 2020 ieee international conference on flexible and printable sensors and systems (fleps), 2020, pp. 1-4.
[Bibtex]@inproceedings{9239593, abstract = {Non-contact imaging of electric potentials with micro-metre resolution can provide relevant insights in material characterisation, electrostatic charge imaging and bio-sensing applications. However, scanning electric potential microscopes have been confined to rigid and single-probe devices, making them slow, prone to mechanical damage and complex to fabricate. In this work, we present a novel 5-element flexible array of electric potential probes with spatial resolution down to 20 μm which reduces the scanning time by a factor of 5 when compared to a single probe device. This was achieved by combining flexible thin-film probes for active guarding and shielding with state-of-the art discrete conditioning circuits. The potential of this approach is showcased by using the fabricated array to image latent fingerprints deposited on an insulating surface by contact electrification. This is the first example of a micro-scale array of electric potential sensors.}, added-at = {2023-05-22T12:22:29.000+0200}, author = {Pouryazdan, Arash and Costa, Júlio C. and Lugoda, Pasindu and Prance, Robert J. and Prance, Helen and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/21046660a1af30c5d311a17aa178679a0/nikomu}, booktitle = {2020 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS49123.2020.9239593}, interhash = {09288f430928d3d25e1e9fd427a89bc0}, intrahash = {1046660a1af30c5d311a17aa178679a0}, keywords = {myown}, month = aug, pages = {1-4}, timestamp = {2023-05-22T12:22:29.000+0200}, title = {Flexible Micro-Scale Sensor Array for Non-Contact Electric Potential Imaging}, url = {https://ieeexplore.ieee.org/document/9239593/}, year = 2020 } - P. Lugoda, J. C. Costa, A. Pouryazdan, L. A. Garcia-Garcia, D. Roggen, and N. Münzenrieder, "Evaluation of a pseudo zero-potential flexible readout circuit for resistive sensor matrixes," in 2020 ieee international conference on flexible and printable sensors and systems (fleps), 2020, pp. 1-4.
[Bibtex]@inproceedings{9239450, abstract = {The zero potential technique is an efficient way to selectively condition passive resistive sensor arrays. However, for flexible wearable sensor systems, the currently utilised amplifiers are not desirable as they are normally based on rigid devices. We present a variation of the zero potential approach utilising flexible thin-film transimpedance amplifiers. This integrated amplifier is based on IGZO thin-film transistors (TFTs) and has a measured cut-off frequency of ≈4 kHz, which is sufficient for most sensing applications. To understand the performance when conditioning a grid of sensors, the flexible system was simulated and compared to the results obtained from rigid transimpedance amplifiers. While these rigid devices led to virtually no crosstalk between sensors, the flexible transimpedance amplifier maintained a selectivity factor of nearly 3. At the same time, the fully flexible IGZO amplifier can be seamlessly integrated with a flexible sensor array and has a footprint of only 1.6 mm2. This approach can enable easily manufactureable, fully flexible, and wearable sensor systems with a minimum number of active devices, avoiding active matrix structures and individual sensor conditioning while maintaining a certain level of sensitivity.}, added-at = {2023-05-22T12:22:01.000+0200}, author = {Lugoda, Pasindu and Costa, Júlio C. and Pouryazdan, Arash and Garcia-Garcia, Leonardo A. and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/25316dff71aa97079cfc8c867a5f73d8b/nikomu}, booktitle = {2020 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS49123.2020.9239450}, interhash = {38c2a1429edc237e85055888089fdca8}, intrahash = {5316dff71aa97079cfc8c867a5f73d8b}, keywords = {myown}, month = aug, pages = {1-4}, timestamp = {2023-05-22T12:22:01.000+0200}, title = {Evaluation of a Pseudo Zero-Potential Flexible Readout Circuit for Resistive Sensor Matrixes}, url = {https://ieeexplore.ieee.org/document/9239450/}, year = 2020 } - J. C. Costa, A. P. Y. P. Kermani, G. Cantarella, L. Petti, C. Vogt, A. Daus, S. Knobelspies, G. Tröster, and N. S. Münzenrieder, "Long-term aging of al2o3 passivated and unpassivated flexible a-igzo tfts," Ieee transactions on electron devices, vol. 67, iss. 11, pp. 4934-4939, 2020.
[Bibtex]@article{9217489, abstract = {Amongst the new materials studied for the fabrication of high-performance flexible thin-film transistors (TFTs), amorphous indium-gallium-zinc-oxide (a-IGZO) exhibits a combination of advantages that enables its application in commercial electronics. Hence, it is crucial to understand the electrical stability of a-IGZO TFTs over long periods of time. In this work, we present the effects of long-term aging on Al2O3 passivated and unpassivated flexible a-IGZO TFTs over a period of 80 months (≈ 6.5 years). It is found that although remaining functional, these devices are influenced by different instability effects. More specifically, positive gate bias stress experiments indicate that the Al2O3 passivation layer contributes to the degradation of the devices' performance. These results show that the Al2O3 passivation, although beneficial to the initial device stability, does not prevent the degradation of the passivated devices in comparison with their unpassivated counterparts after long periods of storage.}, added-at = {2023-05-22T12:21:28.000+0200}, author = {Costa, Julio César and Kermani, Arash Pour Yazdan Panah and Cantarella, Giuseppe and Petti, Luisa and Vogt, Christian and Daus, Alwin and Knobelspies, Stefan and Tröster, Gerhard and Münzenrieder, Niko S.}, biburl = {https://www.bibsonomy.org/bibtex/24fd7115fafff740469114e97febbf964/nikomu}, doi = {10.1109/TED.2020.3026613}, interhash = {7e3e1c5faf881617a5750e133cff45fb}, intrahash = {4fd7115fafff740469114e97febbf964}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = nov, number = 11, pages = {4934-4939}, timestamp = {2023-05-22T12:21:28.000+0200}, title = {Long-Term Aging of Al2O3 Passivated and Unpassivated Flexible a-IGZO TFTs}, url = {https://ieeexplore.ieee.org/document/9217489/}, volume = 67, year = 2020 } - G. Cantarella, J. Costa, T. Meister, K. Ishida, C. Carta, F. Ellinger, P. Lugli, N. Münzenrieder, and L. Petti, "Review of recent trends in flexible metal oxide thin-film transistors for analog applications," Flexible and printed electronics, vol. 5, iss. 3, p. 33001, 2020.
[Bibtex]@article{Cantarella_2020, added-at = {2023-05-22T12:20:59.000+0200}, author = {Cantarella, Giuseppe and Costa, J{\'{u}}lio and Meister, Tilo and Ishida, Koichi and Carta, Corrado and Ellinger, Frank and Lugli, Paolo and Münzenrieder, Niko and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/2ece04a8892a10e7ec0ddae3a38e4d981/nikomu}, doi = {10.1088/2058-8585/aba79a}, interhash = {dcdbc9f6c9b64e148523439217ded5f6}, intrahash = {ece04a8892a10e7ec0ddae3a38e4d981}, journal = {Flexible and Printed Electronics}, keywords = {myown}, month = sep, number = 3, pages = 033001, publisher = {{IOP} Publishing}, timestamp = {2023-05-22T12:20:59.000+0200}, title = {Review of recent trends in flexible metal oxide thin-film transistors for analog applications}, url = {https://doi.org/10.1088%2F2058-8585%2Faba79a}, volume = 5, year = 2020 } - N. Münzenrieder, I. Shorubalko, L. Petti, G. Cantarella, B. Shkodra, T. Meister, K. Ishida, C. Carta, F. Ellinger, and G. Tröster, "Focused ion beam milling for the fabrication of 160 nm channel length igzo tfts on flexible polymer substrates," Flexible and printed electronics, vol. 5, iss. 1, p. 15007, 2020.
[Bibtex]@article{M_nzenrieder_2020, added-at = {2023-05-22T12:20:07.000+0200}, author = {Münzenrieder, Niko and Shorubalko, Ivan and Petti, Luisa and Cantarella, Giuseppe and Shkodra, Bajramshahe and Meister, Tilo and Ishida, Koichi and Carta, Corrado and Ellinger, Frank and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2559b285eca5a0659fc1f0f911fa04410/nikomu}, doi = {10.1088/2058-8585/ab639f}, interhash = {29c7ef9bc6d88ab55896fbc3818ebc88}, intrahash = {559b285eca5a0659fc1f0f911fa04410}, journal = {Flexible and Printed Electronics}, keywords = {myown}, month = jan, number = 1, pages = 015007, publisher = {{IOP} Publishing}, timestamp = {2023-05-22T12:20:07.000+0200}, title = {Focused ion beam milling for the fabrication of 160 nm channel length IGZO TFTs on flexible polymer substrates}, url = {https://doi.org/10.1088%2F2058-8585%2Fab639f}, volume = 5, year = 2020 }
2019
- P. Lugoda, J. C. Costa, C. Oliveira, L. A. Garcia-Garcia, S. D. Wickramasinghe, A. Pouryazdan, D. Roggen, T. Dias, and N. Münzenrieder, "Flexible temperature sensor integration into e-textiles using different industrial yarn fabrication processes," Sensors, vol. 20, iss. 1, p. 73, 2019.
[Bibtex]@article{Lugoda_2019, added-at = {2023-05-22T12:19:16.000+0200}, author = {Lugoda, Pasindu and Costa, Julio C. and Oliveira, Carlos and Garcia-Garcia, Leonardo A. and Wickramasinghe, Sanjula D. and Pouryazdan, Arash and Roggen, Daniel and Dias, Tilak and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2376d659f90614817a369fd36188ef34e/nikomu}, description = {Sensors | Free Full-Text | Flexible Temperature Sensor Integration into E-Textiles Using Different Industrial Yarn Fabrication Processes}, doi = {10.3390/s20010073}, interhash = {11c1212e099076e80bde7a7e695b5c0e}, intrahash = {376d659f90614817a369fd36188ef34e}, journal = {Sensors}, keywords = {myown}, month = dec, number = 1, pages = 73, publisher = {{MDPI} {AG}}, timestamp = {2023-05-22T13:08:27.000+0200}, title = {Flexible Temperature Sensor Integration into E-Textiles Using Different Industrial Yarn Fabrication Processes}, url = {https://doi.org/10.3390%2Fs20010073}, volume = 20, year = 2019 } - A. Pouryazdan, J. C. Costa, R. J. Prance, H. Prance, and N. Münzenrieder, "Non-contact long range ac voltage measurement," in 2019 ieee sensors, 2019, pp. 1-4.
[Bibtex]@inproceedings{8956724, abstract = {Safety requirements and physical constraints often prohibit contacting high voltage terminals. This limits the options for monitoring and maintaining high voltage machinery and power distribution grids. We present a non-contact AC (alternating current) voltage and frequency measurement system with 600 mm of operation range to overcome this issue. The method relies on measuring the electric potential of an AC voltage source using a single capacitive electrometer. Simultaneously, the distance from the AC source is measured using time-of-flight sensors. By combining the data from both sensors, AC voltages can be measured accurately without the need for any galvanic contact. The system is packaged in a handheld battery powered form factor. Measurements of voltages between 25 VRMS and 250 VRMS and distances from 25 mm to 600 mm demonstrated accuracy within 4%. Furthermore, frequencies between 5 Hz to 500 Hz were measured with 10 mHz of resolution. The presented technique can be used as a test and measurement instrument where the source terminals are inaccessible or as a wearable safety device in high-voltage environments.}, added-at = {2023-05-22T12:19:04.000+0200}, author = {Pouryazdan, Arash and Costa, Júlio C. and Prance, Robert J. and Prance, Helen and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2d3c1e9e0d194b8401210f42775fe360a/nikomu}, booktitle = {2019 IEEE SENSORS}, doi = {10.1109/SENSORS43011.2019.8956724}, interhash = {34e963e0835dc0d78af4ed1979cdf3d8}, intrahash = {d3c1e9e0d194b8401210f42775fe360a}, issn = {2168-9229}, keywords = {myown}, month = oct, pages = {1-4}, timestamp = {2023-05-22T12:19:04.000+0200}, title = {Non-contact long range AC voltage measurement}, url = {https://ieeexplore.ieee.org/document/8956724/}, year = 2019 } - F. Spina, J. C. Costa, and N. Münzenrieder, "Flexible igzo thin-film transistors with liquid egaln gate contacts," in 2019 ieee international conference on flexible and printable sensors and systems (fleps), 2019, pp. 1-3.
[Bibtex]@inproceedings{8792241, abstract = {Flexible thin-film electronics leverage technological innovations in fields such as sensors, wearable Computing and healthcare. As these Systems are required to conform to non-planar surfaces, novel approaches are developed to provide stable performance under mechanical stress, and prevent crack formation. Liquid eutectic-Galn promises the realisation of self- healing, reconfigurable and bendable circuits. Here, a liquid EGaln-gate thin-film transistor is fabricated and characterised. The device yielded a carrier mobility of 7.9 cm 2 V-1 s-1 that increased by 0.36 cm 2 V-1 s-1 when bent to a 4 mm radius. These results promote the integration of highly deformable liquid materials into thin-film devices.}, added-at = {2023-05-22T12:18:26.000+0200}, author = {Spina, Filippo and Costa, Júlio C. and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2f1e38f6d54077bc4a1c6d6ec646aaf5d/nikomu}, booktitle = {2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS.2019.8792241}, interhash = {5d2b383b73c69bcbf00e04752a96bfd5}, intrahash = {f1e38f6d54077bc4a1c6d6ec646aaf5d}, keywords = {myown}, month = {July}, pages = {1-3}, timestamp = {2023-05-22T12:18:26.000+0200}, title = {Flexible IGZO thin-film transistors with liquid EGaln gate contacts}, url = {https://ieeexplore.ieee.org/document/8792241/}, year = 2019 } - J. C. Costa, A. Pouryazdan, J. Panidi, F. Spina, T. D. Anthopoulos, M. O. Liedke, C. Schneider, A. Wagner, and N. Münzenrieder, "Flexible igzo tfts and their suitability for space applications," Ieee journal of the electron devices society, vol. 7, pp. 1182-1190, 2019.
[Bibtex]@article{8778754, abstract = {In this paper, low earth orbit radiation (LEO), temperature, and magnetic field conditions are mimicked to investigate the suitability of flexible InGaZnO transistors for lightweight space wearables. More specifically, the impacts of high energetic electron irradiation with fluences up to 1012 e-/cm2, low operating temperatures down to 78 K and magnetic fields up to 11 mT are investigated. This simulates 278 h in LEO. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +(0.09 ± 0.05) V and -(0.6 ± 0.5) cm2V-1s-1. Subsequent low temperature exposure resulted in additional shifts of +0.38 V and -5.95 cm2V-1s-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. Conversely, the performance of the devices was observed not to be significantly affected by the magnetic fields. Finally, a Cascode amplifier presenting a voltage gain of 10.3 dB and a cutoff frequency of 1.2 kHz is demonstrated after the sample had been irradiated, cooled down, and exposed to the magnetic fields. If these notions are considered during the systems design, these devices can be used to unobtrusively integrate sensor systems into space suits.}, added-at = {2023-05-22T12:17:47.000+0200}, author = {Costa, Júlio C. and Pouryazdan, Arash and Panidi, Julianna and Spina, Filippo and Anthopoulos, Thomas D. and Liedke, Maciej O. and Schneider, Christof and Wagner, Andreas and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/298f5643348eadedf30e39817d71c3eba/nikomu}, doi = {10.1109/JEDS.2019.2931614}, interhash = {09020590c1324732cf94adb8267cf976}, intrahash = {98f5643348eadedf30e39817d71c3eba}, issn = {2168-6734}, journal = {IEEE Journal of the Electron Devices Society}, keywords = {myown}, pages = {1182-1190}, timestamp = {2023-05-22T12:17:47.000+0200}, title = {Flexible IGZO TFTs and Their Suitability for Space Applications}, url = {https://ieeexplore.ieee.org/document/8778754/}, volume = 7, year = 2019 } - N. Münzenrieder, J. Costa, L. Petti, G. Cantarella, T. Meister, K. Ishida, C. Carta, and F. Ellinger, "Design of bendable high-frequency circuits based on short-channel ingazno tfts," in 2019 ieee international conference on flexible and printable sensors and systems (fleps), 2019, pp. 1-3.
[Bibtex]@inproceedings{8792264, abstract = {A unique requirement of flexible electronic systems is the need to simultaneously optimize their electrical and mechanical performance. Amorphous InGaZnO thin-film transistors (TFTs) fabricated on free-standing large-area plastic substrates address this issue by providing a carrier mobility >10 cm 2 /Vs, and bendability down to radii as small as 25 μm. At the same time, limitations such as a constrained minimum lateral feature size, the lack of appropriate p-type materials, or the influence of strain have to be considered when designing circuits. Here, models describing the scaling and bending behavior of flexible InGaZnO TFTs, together with the design of strain insensitive circuits operating at megahertz frequencies are presented.}, added-at = {2023-05-22T12:17:16.000+0200}, author = {Münzenrieder, Niko and Costa, Júlio and Petti, Luisa and Cantarella, Giuseppe and Meister, Tilo and Ishida, Koichi and Carta, Corrado and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/273bc5a15a50f89f8e278c9cc6ab46c11/nikomu}, booktitle = {2019 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)}, doi = {10.1109/FLEPS.2019.8792264}, interhash = {9baf2ae2e97f719aec4df6a3354fe7c3}, intrahash = {73bc5a15a50f89f8e278c9cc6ab46c11}, keywords = {myown}, month = {July}, pages = {1-3}, timestamp = {2023-05-22T12:17:16.000+0200}, title = {Design of bendable high-frequency circuits based on short-channel InGaZnO TFTs}, url = {https://ieeexplore.ieee.org/document/8792264/}, year = 2019 } - P. Lugoda, L. A. Garcia-Garcia, S. Richoz, N. Munzenrieder, and D. Roggen, "Shapesense 3d," in Adjunct proceedings of the 2019 ACM international joint conference on pervasive and ubiquitous computing and proceedings of the 2019 ACM international symposium on wearable computers, 2019.
[Bibtex]@inproceedings{Lugoda_2019, added-at = {2023-05-22T12:16:42.000+0200}, author = {Lugoda, Pasindu and Garcia-Garcia, Leonardo A. and Richoz, Sebastien and Munzenrieder, Niko and Roggen, Daniel}, biburl = {https://www.bibsonomy.org/bibtex/2a3b16d94fbdfc50a5c4d6bafdb776ec4/nikomu}, booktitle = {Adjunct Proceedings of the 2019 {ACM} International Joint Conference on Pervasive and Ubiquitous Computing and Proceedings of the 2019 {ACM} International Symposium on Wearable Computers}, description = {ShapeSense3D | Adjunct Proceedings of the 2019 ACM International Joint Conference on Pervasive and Ubiquitous Computing and Proceedings of the 2019 ACM International Symposium on Wearable Computers}, doi = {10.1145/3341162.3343846}, interhash = {4eebed30e72d2ae2e8479e45e1c4e0ed}, intrahash = {a3b16d94fbdfc50a5c4d6bafdb776ec4}, keywords = {myown}, month = sep, publisher = {{ACM}}, timestamp = {2023-05-22T13:08:32.000+0200}, title = {ShapeSense 3D}, url = {https://doi.org/10.1145%2F3341162.3343846}, year = 2019 } - F. Spina, A. Pouryazdan, J. C. Costa, L. P. Cuspinera, and N. Münzenrieder, "Directly 3d-printed monolithic soft robotic gripper with liquid metal microchannels for tactile sensing," Flexible and printed electronics, vol. 4, iss. 3, p. 35001, 2019.
[Bibtex]@article{Spina_2019, added-at = {2023-05-22T12:16:11.000+0200}, author = {Spina, Filippo and Pouryazdan, Arash and Costa, Julio C and Cuspinera, Luis Ponce and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2ca8276c5a8f87483fdcbfac1d864f50a/nikomu}, doi = {10.1088/2058-8585/ab3384}, interhash = {061a23bedd7c74fc059a5914a3562eaa}, intrahash = {ca8276c5a8f87483fdcbfac1d864f50a}, journal = {Flexible and Printed Electronics}, keywords = {myown}, month = aug, number = 3, pages = 035001, publisher = {{IOP} Publishing}, timestamp = {2023-05-22T12:16:11.000+0200}, title = {Directly 3D-printed monolithic soft robotic gripper with liquid metal microchannels for tactile sensing}, url = {https://doi.org/10.1088%2F2058-8585%2Fab3384}, volume = 4, year = 2019 } - G. Cantarella, S. Kumar, C. Vogt, S. Knobelspies, A. Takabayashi, J. Jagielski, N. Münzenrieder, A. Daus, L. Petti, G. A. Salvatore, P. Lugli, C. Shih, and G. Tröster, "Flexible green perovskite light emitting diodes," Ieee journal of the electron devices society, vol. 7, pp. 769-775, 2019.
[Bibtex]@article{8701470, abstract = {Flexible perovskite light-emitting diodes (LEDs) have attracted increasing interest to realize ultrathin, light weight, highly conformable, and nonfragile vivid displays. Solution-processed lead halide perovskite offers numerous distinctive characteristics, such as pure emission color, tunable bandgaps, and low fabrication cost. In this paper, green perovskite LEDs (PeLEDs) are fabricated on 50-μm thick polyimide substrates. Using colloidal 2-D formamidinium lead bromide perovskite emitter, the PeLEDs show a high current efficiency (ηCE) of 5.3 cd A-1 with a peak emission at 529 ± 1 nm and a narrow width of 22.8 nm. The resultant green emission shows color saturation > 95%, in the Rec. 2020 standard gamut area. To demonstrate mechanical flexibility, the device functionality is tested by dynamic bending experiments down to 10 mm for up to 5000 cycles, resulting in device lifetime over 36 h in a glove box and a drop of ηCE and external quantum efficiency (ïext) as low as 15% and 18%, respectively. For the selective activation of multiple PeLEDs, 7×7 passive arrays on rigid and flexible substrates are demonstrated. Moreover, preliminary results of active matrices show the compatibility of PeLEDs with oxide-based thin-film transistors (TFTs) for display applications.}, added-at = {2023-05-22T12:15:21.000+0200}, author = {Cantarella, Giuseppe and Kumar, Sudhir and Vogt, Christian and Knobelspies, Stefan and Takabayashi, Alain and Jagielski, Jakub and Münzenrieder, Niko and Daus, Alwin and Petti, Luisa and Salvatore, Giovanni A. and Lugli, Paolo and Shih, Chih-Jen and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/200aaa6fb2597b8f50ea92f679d19d488/nikomu}, doi = {10.1109/JEDS.2019.2913765}, interhash = {506fc5d5862c627b0aa21621c42c3c2e}, intrahash = {00aaa6fb2597b8f50ea92f679d19d488}, issn = {2168-6734}, journal = {IEEE Journal of the Electron Devices Society}, keywords = {myown}, pages = {769-775}, timestamp = {2023-05-22T12:15:21.000+0200}, title = {Flexible Green Perovskite Light Emitting Diodes}, url = {https://ieeexplore.ieee.org/document/8701470/}, volume = 7, year = 2019 } - N. Münzenrieder, G. Cantarella, and L. Petti, "Fabrication and ac performance of flexible indium-gallium-zinc-oxide thin-film transistors," ECS transactions, vol. 90, iss. 1, p. 55–63, 2019.
[Bibtex]@article{M_nzenrieder_2019, added-at = {2023-05-22T12:14:44.000+0200}, author = {Münzenrieder, Niko and Cantarella, Giuseppe and Petti, Luisa}, biburl = {https://www.bibsonomy.org/bibtex/2649a03ae6b809be78693c0f581d6623a/nikomu}, doi = {10.1149/09001.0055ecst}, interhash = {1b743b9f690035e51ad83c94ec10840e}, intrahash = {649a03ae6b809be78693c0f581d6623a}, journal = {{ECS} Transactions}, keywords = {myown}, month = apr, number = 1, pages = {55--63}, publisher = {The Electrochemical Society}, timestamp = {2023-05-22T12:14:44.000+0200}, title = {Fabrication and AC Performance of Flexible Indium-Gallium-Zinc-Oxide Thin-Film Transistors}, url = {https://doi.org/10.1149%2F09001.0055ecst}, volume = 90, year = 2019 } - T. Meister, K. Ishida, S. Knobelspies, G. Cantarella, N. Münzenrieder, G. Tröster, C. Carta, and F. Ellinger, "5–31-hz 188- uw light-sensing oscillator with two active inductors fully integrated on plastic," Ieee journal of solid-state circuits, vol. 54, iss. 8, pp. 2195-2206, 2019.
[Bibtex]@article{8721229, abstract = {We present a low-power low-frequency oscillator that is fully integrated on a bendable plastic substrate using amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). Its purpose is the duty cycling of components of a wireless sensor tag to realize power savings. In addition, the oscillator can directly be used as a light sensor. It oscillates between 5 Hz in the dark and 31 Hz under daylight, from a 5-V supply voltage. The measured light-sensitivity of the oscillation frequency is between 7.4 Hz/klx in the dark and around 1.7 Hz/klx in daylight. On average, the frequency of oscillation changes by 58 %/klx. The required power is 188 μW. The presented design is a combination of the inductance-capacitance cross-coupled oscillator structure and two single-transistor active inductors, which enable high gain at low power levels in a small chip area. We analyze the circuit and derive design guidelines for minimizing the oscillation frequency, circuit area, and power consumption. Finally, we report the measurements including jitter and deduce implications for the accuracy of light measurements.}, added-at = {2023-05-22T12:14:04.000+0200}, author = {Meister, Tilo and Ishida, Koichi and Knobelspies, Stefan and Cantarella, Giuseppe and Münzenrieder, Niko and Tröster, Gerhard and Carta, Corrado and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/2d4e2294e4e9b2d954ce974eb09485525/nikomu}, doi = {10.1109/JSSC.2019.2914405}, interhash = {2e846e197de3a7ed8a2bf333b73f49d9}, intrahash = {d4e2294e4e9b2d954ce974eb09485525}, issn = {1558-173X}, journal = {IEEE Journal of Solid-State Circuits}, keywords = {myown}, month = aug, number = 8, pages = {2195-2206}, timestamp = {2023-05-22T12:14:04.000+0200}, title = {5–31-Hz 188- uW Light-Sensing Oscillator With Two Active Inductors Fully Integrated on Plastic}, url = {https://ieeexplore.ieee.org/document/8721229/}, volume = 54, year = 2019 } - J. Costa, F. Spina, P. Lugoda, L. Garcia-Garcia, D. Roggen, and N. Münzenrieder, "Flexible sensors—from materials to applications," Technologies, vol. 7, iss. 2, p. 35, 2019.
[Bibtex]@article{costa2019flexible, added-at = {2023-05-22T12:13:07.000+0200}, author = {Costa, Júlio and Spina, Filippo and Lugoda, Pasindu and Garcia-Garcia, Leonardo and Roggen, Daniel and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2278a7eff70923b4154346f24cc7a7f14/nikomu}, doi = {10.3390/technologies7020035}, interhash = {1cfd74a16cd8282bf0ea2bd9dc0b8da1}, intrahash = {278a7eff70923b4154346f24cc7a7f14}, journal = {Technologies }, keywords = {myown}, number = 2, pages = 35, timestamp = {2023-05-22T12:13:07.000+0200}, title = {Flexible Sensors—From Materials to Applications }, url = {https://www.mdpi.com/2227-7080/7/2/35}, volume = 7, year = 2019 }
2018
- N. Münzenrieder, K. Ishida, T. Meister, G. Cantarella, L. Petti, C. Carta, F. Ellinger, and G. Tröster, "Flexible ingazno tfts with fmax above 300 mhz," Ieee electron device letters, vol. 39, iss. 9, pp. 1310-1313, 2018.
[Bibtex]@article{8408838, abstract = {In this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) fmax beyond 300 MHz, are presented. Self-alignment was used to realize TFTs with channel length down to 0.5 μm. The layout of these TFTs was optimized for good AC performance. Besides the channel dimensions, this includes ground-signal-ground contact pads. The AC performance of these short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in fmax values of (304 ± 12) and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, fmax reduces by 3.6% when a TFT is bent to a tensile radius of 3.5 mm.}, added-at = {2023-05-22T12:09:06.000+0200}, author = {Münzenrieder, Niko and Ishida, Koichi and Meister, Tilo and Cantarella, Giuseppe and Petti, Luisa and Carta, Corrado and Ellinger, Frank and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/272fc1aa7207d0d48df1bce35303d6324/nikomu}, doi = {10.1109/LED.2018.2854362}, interhash = {a24a4697b1e08ce10aa43fe789595039}, intrahash = {72fc1aa7207d0d48df1bce35303d6324}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = {Sep.}, number = 9, pages = {1310-1313}, timestamp = {2023-05-22T12:09:06.000+0200}, title = {Flexible InGaZnO TFTs With fmax Above 300 MHz}, url = {https://ieeexplore.ieee.org/document/8408838/}, volume = 39, year = 2018 } - W. M. H. bin Wan Zaidi, J. Costa, A. Pouryazdan, W. F. H. Abdullah, and N. Münzenrieder, "Flexible igzo tft spice model and design of active strain-compensation circuits for bendable active matrix arrays," Ieee electron device letters, vol. 39, iss. 9, pp. 1314-1317, 2018.
[Bibtex]@article{8408823, abstract = {The detailed measurement and characterization of strain-induced performance variations in flexible InGaZnO thin-film transistors (IGZO TFTs) resulted in a SPICE TFT model able to simulate tensile and compressive bending. This model was used to evaluate a new concept, namely, the active compensation of strain-induced performance variations in pixel driving circuits for bendable active matrix arrays. The designed circuits can compensate the mobility and threshold voltage shifts in IGZO TFTs induced by bending. In a single TFT, a drain current of 1 mA varies by 83 μA per percent of mechanical strain. The most effective compensationcircuit design, comprising one additional TFT and two resistors, reduces the driving current variation to 1.1 μA per percent of strain. The compensation circuit requires no additional control signals and increases the power consumption by only 235 μW (corresponds to 4.7%). Finally, switching operation is possible for frequencies up to 200 kHz. This opens a way toward the fabrication of flexible displays with constant brightness even when bent.}, added-at = {2023-05-22T12:08:04.000+0200}, author = {bin Wan Zaidi, Wan Muhammad Hilmi and Costa, Júlio and Pouryazdan, Arash and Abdullah, Wan Fazlida Hanim and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/22bcdc61d7dcdd2f632bd90a48a5b4732/nikomu}, doi = {10.1109/LED.2018.2854541}, interhash = {34f4111624260b54f9004f72802d4ca2}, intrahash = {2bcdc61d7dcdd2f632bd90a48a5b4732}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = {Sep.}, number = 9, pages = {1314-1317}, timestamp = {2023-05-22T12:08:04.000+0200}, title = {Flexible IGZO TFT SPICE Model and Design of Active Strain-Compensation Circuits for Bendable Active Matrix Arrays}, url = {https://ieeexplore.ieee.org/document/8408823/}, volume = 39, year = 2018 } - L. Petti, E. Greco, G. Cantarella, N. Münzenrieder, C. Vogt, and G. Tröster, "Flexible in–ga–zn–o thin-film transistors with sub-300-nm channel lengths defined by two-photon direct laser writing," Ieee transactions on electron devices, vol. 65, iss. 9, pp. 3796-3802, 2018.
[Bibtex]@article{8411327, abstract = {In this paper, the low-temperature (≤150 °C) fabrication and characterization of flexible indium-gallium-zinc-oxide (IGZO) top-gate thin-film transistors (TFTs) with channel lengths down to 280 nm is presented. Such extremely short channel lengths in flexible IGZO TFTs were realized with a novel manufacturing process combining two-photon direct laser writing (DLW) photolithography with Ti/Au/Ti source/drain e-beam evaporation and liftoff. The resulting flexible IGZO TFTs exhibit a saturation field-effect mobility of 1.1 cm2 · V-1 · s-1 and a threshold voltage of 3 V. Thanks to the short channel lengths (280 nm) and the small gate to source/drain overlap (5.2 μm), the TFTs yield a transit frequency of 80 MHz (at 8.5-V gate-source voltage) extracted from the measured S-parameters. Furthermore, the devices are fully functional when wrapped around a cylindrical rod with 6-mm radius, corresponding to 0.4% tensile strain in the TFT channel. These results demonstrate a new methodology to realize entirely flexible nanostructures and prove its suitability for the fabrication of short-channel transistors on polymer substrates for future wearable communication electronics.}, added-at = {2023-05-22T12:07:33.000+0200}, author = {Petti, Luisa and Greco, Emanuel and Cantarella, Giuseppe and Münzenrieder, Niko and Vogt, Christian and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/258c575cdc4e65c734d489dfd9efb7366/nikomu}, doi = {10.1109/TED.2018.2851926}, interhash = {a55dd8a33b1702cffc731467ec851cdb}, intrahash = {58c575cdc4e65c734d489dfd9efb7366}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {Sep.}, number = 9, pages = {3796-3802}, timestamp = {2023-05-22T12:07:33.000+0200}, title = {Flexible In–Ga–Zn–O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing}, url = {https://ieeexplore.ieee.org/document/8411327/}, volume = 65, year = 2018 } - J. C. Costa, A. Wishahi, A. Pouryazdan, M. Nock, and N. Münzenrieder, "Hand-drawn resistors, capacitors, diodes, and circuits for a pressure sensor system on paper," Advanced electronic materials, vol. 4, iss. 5, p. 1700600, 2018.
[Bibtex]@article{Costa_2018, added-at = {2023-05-22T12:06:48.000+0200}, author = {Costa, J{\'{u}}lio C. and Wishahi, Amir and Pouryazdan, Arash and Nock, Martin and Münzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/28a858f414b212cb93a4fd15631a2abec/nikomu}, doi = {10.1002/aelm.201700600}, interhash = {5ebbd14c1471b04d9d41390e11dee2e1}, intrahash = {8a858f414b212cb93a4fd15631a2abec}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = feb, number = 5, pages = 1700600, publisher = {Wiley}, timestamp = {2023-05-22T12:06:48.000+0200}, title = {Hand-Drawn Resistors, Capacitors, Diodes, and Circuits for a Pressure Sensor System on Paper}, url = {https://doi.org/10.1002%2Faelm.201700600}, volume = 4, year = 2018 } - G. Cantarella, V. Costanza, A. Ferrero, R. Hopf, C. Vogt, M. Varga, L. Petti, N. Münzenrieder, L. Büthe, G. Salvatore, A. Claville, L. Bonanomi, A. Daus, S. Knobelspies, C. Daraio, and G. Tröster, "Design of engineered elastomeric substrate for stretchable active devices and sensors," Advanced functional materials, vol. 28, iss. 30, p. 1705132, 2018.
[Bibtex]@article{Cantarella_2018, added-at = {2023-05-22T12:06:06.000+0200}, author = {Cantarella, Giuseppe and Costanza, Vincenzo and Ferrero, Alberto and Hopf, Raoul and Vogt, Christian and Varga, Matija and Petti, Luisa and Münzenrieder, Niko and Büthe, Lars and Salvatore, Giovanni and Claville, Alex and Bonanomi, Luca and Daus, Alwin and Knobelspies, Stefan and Daraio, Chiara and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2301a783c774486986d25e469d1acbbf9/nikomu}, doi = {10.1002/adfm.201705132}, interhash = {af531b8dcb243e90906ddecc38d8a65b}, intrahash = {301a783c774486986d25e469d1acbbf9}, journal = {Advanced Functional Materials}, keywords = {myown}, month = may, number = 30, pages = 1705132, publisher = {Wiley}, timestamp = {2023-05-22T12:06:06.000+0200}, title = {Design of Engineered Elastomeric Substrate for Stretchable Active Devices and Sensors}, url = {https://doi.org/10.1002%2Fadfm.201705132}, volume = 28, year = 2018 } - J. C. Costa, A. Pouryazdan, J. Panidi, T. Anthopoulos, M. O. Liedke, C. Schneider, A. Wagner, and N. Munzenrieder, "Low temperature and radiation stability of flexible igzo tfts and their suitability for space applications," in 2018 48th european solid-state device research conference (essderc), 2018, pp. 98-101.
[Bibtex]@inproceedings{8486889, abstract = {In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 1012e-/cm2 and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e- irradiation are found to shift by +0.09±0.05V and -0.6±0.5cm2V-1s-1. Subsequent low temperature exposure resulted in additional shifts of +0.38V and -5.95 cm2V-1s-1 for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.}, added-at = {2023-05-22T12:05:48.000+0200}, author = {Costa, Julio C. and Pouryazdan, Arash and Panidi, Julianna and Anthopoulos, Thomas and Liedke, Maciej O. and Schneider, Christof and Wagner, Andreas and Munzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2a6610d891fd5031ce841ec5d934ce523/nikomu}, booktitle = {2018 48th European Solid-State Device Research Conference (ESSDERC)}, doi = {10.1109/ESSDERC.2018.8486889}, interhash = {c34b445b5ffc57a2a0f6fbdf1ea84356}, intrahash = {a6610d891fd5031ce841ec5d934ce523}, issn = {2378-6558}, keywords = {myown}, month = {Sep.}, pages = {98-101}, timestamp = {2023-05-22T12:05:48.000+0200}, title = {Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications}, url = {https://ieeexplore.ieee.org/document/8486889/}, year = 2018 } - F. Ellinger, K. Ishida, T. Meister, B. K. Boroujeni, M. Barahona, C. Carta, N. Münzenrieder, G. Cantarella, L. Petti, S. Knobelspies, G. A. Salvatore, G. Tröster, G. C. Schmidt, and A. C. Hübler, "Bendable printed and thin-film electronics for wireless communications," in 2018 2nd ursi atlantic radio science meeting (at-rasc), 2018, pp. 1-4.
[Bibtex]@inproceedings{8471532, abstract = {In this paper an overview of the recent progress of bendable ultra-thin and lightweight electronics for wearable wireless communication systems is given. This kind of electronics can be realized on a piece of plastic foil or paper and does not need any standard rigid chips. The focus will be on organic, printed and thin-film electronics and addresses the following components: thin-film transistors (TFTs) with transit frequency (ft) up to 138 MHz, roll to roll (R2R) printed organic field effect transistors (OFETs) with f1 beyond 50 kHz, an OFET-based R2R printed audio amplifier, active TFT-based wireless transmitters and receivers up to 20 MHz, and R2R printed passive radio frequency identification (RFID) tags in the GHz range.}, added-at = {2023-05-22T12:05:18.000+0200}, author = {Ellinger, F. and Ishida, K. and Meister, T. and Boroujeni, B. K. and Barahona, M. and Carta, C. and Münzenrieder, N. and Cantarella, G. and Petti, L. and Knobelspies, S. and Salvatore, G. A. and Tröster, G. and Schmidt, G. C. and Hübler, A. C.}, biburl = {https://www.bibsonomy.org/bibtex/29d59cd66bf322fef5b3451b12259a6fb/nikomu}, booktitle = {2018 2nd URSI Atlantic Radio Science Meeting (AT-RASC)}, doi = {10.23919/URSI-AT-RASC.2018.8471532}, interhash = {6dcc5c7db04ad37708f5a2c89a9237f1}, intrahash = {9d59cd66bf322fef5b3451b12259a6fb}, keywords = {myown}, month = may, pages = {1-4}, timestamp = {2023-05-22T12:05:18.000+0200}, title = {Bendable Printed and Thin-film Electronics for Wireless Communications}, url = {https://ieeexplore.ieee.org/document/8471532/}, year = 2018 } - S. Knobelspies, A. Takabayashi, A. Daus, G. Cantarella, N. Münzenrieder, and G. Tröster, "Improvement of contact resistance in flexible a-igzo thin-film transistors by cf4/o2 plasma treatment," Solid-state electronics, vol. 150, pp. 23-27, 2018.
[Bibtex]@article{KNOBELSPIES201823, abstract = {In this work, we analyze the effect of CF4/O2 plasma treatment on the contact interface between the amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) semiconductor and Titanium-Gold electrodes. First, the influence of CF4/O2 plasma treatment is evaluated using transmission line structures and compared to pure O2 and CF4 plasma, resulting in a reduction of the contact resistance RC by a factor of 24.2 compared to untreated interfaces. Subsequently, the CF4/O2 plasma treatment is integrated in the a-IGZO thin-film transistor (TFT) fabrication process flow. We achieve a reduction of the gate bias dependent RC by a factor up to 13.4, which results in an increased current drive capability. Combined with an associated channel length reduction, the effective linear field-effect mobility μlin,FE,eff is increased by up to 74.6% for the CF4/O2 plasma treated TFTs compared to untreated reference devices.}, added-at = {2023-05-22T12:04:26.000+0200}, author = {Knobelspies, S. and Takabayashi, A. and Daus, A. and Cantarella, G. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2d06281735c9df6b07fc0106c85f58841/nikomu}, description = {Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment - ScienceDirect}, doi = {https://doi.org/10.1016/j.sse.2018.10.002}, interhash = {efb09bd4fb2883df9df445ffb8b9be1e}, intrahash = {d06281735c9df6b07fc0106c85f58841}, issn = {0038-1101}, journal = {Solid-State Electronics}, keywords = {myown}, pages = {23-27}, timestamp = {2023-05-22T13:09:06.000+0200}, title = {Improvement of contact resistance in flexible a-IGZO thin-film transistors by CF4/O2 plasma treatment}, url = {https://www.sciencedirect.com/science/article/pii/S0038110118302995}, volume = 150, year = 2018 }
2017
- A. Daus, S. Han, S. Knobelspies, G. Cantarella, C. Vogt, N. Münzenrieder, and G. Tröster, "Flexible cmos electronics based on p-type ge2sb2te5 and n-type ingazno4 semiconductors," in 2017 ieee international electron devices meeting (iedm), 2017, p. 8.1.1-8.1.4.
[Bibtex]@inproceedings{8268349, abstract = {Ultra-thin p-type chalcogenide glass Ge2Sb2Te5 (GST) semiconductor layers are employed to form flexible thin-film transistors (TFTs). For the first time, TFTs based on GST show saturating output characteristics and an ON/OFF ratio up to 388, exceeding present reports by a factor of ~20. The channel current modulation is greatly enhanced by using ultra-thin 5 nm thick amorphous GST layers and 20 nm thick high-k Al2O3 gate dielectrics. Flexible CMOS circuits are realized in combination with the n-type oxide semiconductor InGaZnO4 (IGZO). The CMOS inverters show voltage gain of up to 69. Furthermore, flexible NAND gates are presented. The bending stability is shown for a tensile radius of 6 mm.}, added-at = {2023-05-22T12:04:12.000+0200}, author = {Daus, A. and Han, S. and Knobelspies, S. and Cantarella, G. and Vogt, C. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/28f6d693368c680931c2d19b6e9f7efb4/nikomu}, booktitle = {2017 IEEE International Electron Devices Meeting (IEDM)}, doi = {10.1109/IEDM.2017.8268349}, interhash = {1723fc18d738490dbc58c982a20abb02}, intrahash = {8f6d693368c680931c2d19b6e9f7efb4}, issn = {2156-017X}, keywords = {myown}, month = dec, pages = {8.1.1-8.1.4}, timestamp = {2023-05-22T12:04:12.000+0200}, title = {Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors}, url = {https://ieeexplore.ieee.org/document/8268349/}, year = 2017 } - K. Ishida, T. Meister, S. Knobelspies, N. Münzenrieder, G. Cantarella, G. A. Salvatore, G. Tröster, C. Carta, and F. Ellinger, "3–5 v, 3–3.8 mhz ook modulator with a-igzo tfts for flexible wireless transmitter," in 2017 ieee international conference on microwaves, antennas, communications and electronic systems (comcas), 2017, pp. 1-4.
[Bibtex]@inproceedings{8244748, abstract = {This paper presents an On-Off-Keying (OOK) modulator for a flexible and wearable wireless transmitter implemented in an amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFT technology. The circuit consists of a three-stage ring oscillator for the carrier and an output driver with an OOK modulation switch, realized with just five transistors. In order to maximize the operation frequency, we use 2 μm-long nMOS transistors in the circuit design. The proposed OOK modulator is fabricated on a polyimide flexible substrate, and characterized with 3-to-5 V supply voltages and an output load capacitance of 15 pF. The circuit operates from the lowest supply voltage of 3 V, while the highest measured oscillation frequency is 3.76 MHz at 5 V VDD. Although the schematic is simple and straight forward, the equivalent modulation depth ranges from 61.3 % to 78.2 %, which can be detected with an existing AM/OOK receiver in the same technology. The power consumptions for 3 V and 5 V supply voltages are 2.15 mW and 6.77 mW, respectively.}, added-at = {2023-05-22T12:03:45.000+0200}, author = {Ishida, K. and Meister, T. and Knobelspies, S. and Münzenrieder, N. and Cantarella, G. and Salvatore, G. A. and Tröster, G. and Carta, C. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/2ffd50d3d4cca5ac6bf0b87284aeab4e1/nikomu}, booktitle = {2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}, doi = {10.1109/COMCAS.2017.8244748}, interhash = {ef549077da693096b466382363c2284b}, intrahash = {ffd50d3d4cca5ac6bf0b87284aeab4e1}, keywords = {myown}, month = nov, pages = {1-4}, timestamp = {2023-05-22T12:03:45.000+0200}, title = {3–5 V, 3–3.8 MHz OOK modulator with a-IGZO TFTs for flexible wireless transmitter}, url = {https://ieeexplore.ieee.org/document/8244748/}, year = 2017 } - T. Meister, F. Ellinger, J. W. Bartha, M. Berroth, J. Burghartz, M. Claus, L. Frey, A. Gagliardi, M. Grundmann, J. Hesselbarth, H. Klauk, K. Leo, P. Lugli, S. Mannsfeld, Y. Manoli, R. Negra, D. Neumaier, U. Pfeiffer, T. Riedl, S. Scheinert, U. Scherf, A. Thiede, G. Tröster, M. Vossiek, R. Weigel, C. Wenger, G. Alavi, M. Becherer, C. A. Chavarin, M. Darwish, M. Ellinger, C. Fan, M. Fritsch, F. Grotjahn, M. Gunia, K. Haase, P. Hillger, K. Ishida, M. Jank, S. Knobelspies, M. Kuhl, G. Lupina, S. M. Naghadeh, N. Münzenrieder, S. Özbek, M. Rasteh, G. A. Salvatore, D. Schrüfer, C. Strobel, M. Theisen, C. Tückmantel, H. von Wenckstern, Z. Wang, and Z. Zhang, "Program fflexcom — high frequency flexible bendable electronics for wireless communication systems," in 2017 ieee international conference on microwaves, antennas, communications and electronic systems (comcas), 2017, pp. 1-6.
[Bibtex]@inproceedings{8244733, abstract = {Today, electronics are implemented on rigid substrates. However, many objects in daily-life are not rigid — they are bendable, stretchable and even foldable. Examples are paper, tapes, our body, our skin and textiles. Until today there is a big gap between electronics and bendable daily-life items. Concerning this matter, the DFG Priority Program FFlexCom aims at paving the way for a novel research area: Wireless communication systems fully integrated on an ultra-thin, bendable and flexible piece of plastic or paper. The Program encompasses 13 projects led by 25 professors. By flexibility we refer to mechanical flexibility, which can come in flavors of bendability, foldability and, stretchability. In the last years the speed of flexible devices has massively been improved. However, to enable functional flexible systems and operation frequencies up to the sub-GHz range, the speed of flexible devices must still be increased by several orders of magnitude requiring novel system and circuit architectures, component concepts, technologies and materials.}, added-at = {2023-05-22T12:03:12.000+0200}, author = {Meister, Tilo and Ellinger, Frank and Bartha, Johann W. and Berroth, Manfred and Burghartz, Joachim and Claus, Martin and Frey, Lothar and Gagliardi, Alessio and Grundmann, Marius and Hesselbarth, Jan and Klauk, Hagen and Leo, Karl and Lugli, Paolo and Mannsfeld, Stefan and Manoli, Yiannos and Negra, Renato and Neumaier, Daniel and Pfeiffer, Ullrich and Riedl, Thomas and Scheinert, Susanne and Scherf, Ullrich and Thiede, Andreas and Tröster, Gerhard and Vossiek, Martin and Weigel, Robert and Wenger, Christian and Alavi, Golzar and Becherer, Markus and Chavarin, Carlos Alvarado and Darwish, Mohammed and Ellinger, Martin and Fan, Chun-Yu and Fritsch, Martin and Grotjahn, Frank and Gunia, Marco and Haase, Katherina and Hillger, Philipp and Ishida, Koichi and Jank, Michael and Knobelspies, Stefan and Kuhl, Matthias and Lupina, Grzegorz and Naghadeh, Shabnam Mohammadi and Münzenrieder, Niko and Özbek, Sefa and Rasteh, Mahsa and Salvatore, Giovanni A. and Schrüfer, Daniel and Strobel, Carsten and Theisen, Manuel and Tückmantel, Christian and von Wenckstern, Holger and Wang, Zhenxing and Zhang, Zhipeng}, biburl = {https://www.bibsonomy.org/bibtex/220be7ca9f5574322c2092efeb6b3e81d/nikomu}, booktitle = {2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)}, doi = {10.1109/COMCAS.2017.8244733}, interhash = {7eec2613aa52b5503efa18a314b3960c}, intrahash = {20be7ca9f5574322c2092efeb6b3e81d}, keywords = {myown}, month = nov, pages = {1-6}, timestamp = {2023-05-22T12:03:12.000+0200}, title = {Program FFlexCom — High frequency flexible bendable electronics for wireless communication systems}, url = {https://ieeexplore.ieee.org/document/8244733/}, year = 2017 } - A. Daus, P. Lenarczyk, L. Petti, N. Münzenrieder, S. Knobelspies, G. Cantarella, C. Vogt, G. A. Salvatore, M. Luisier, and G. Tröster, "Ferroelectric-like charge trapping thin-film transistors and their evaluation as memories and synaptic devices," Advanced electronic materials, vol. 3, iss. 12, p. 1700309, 2017.
[Bibtex]@article{Daus_2017, added-at = {2023-05-22T12:02:44.000+0200}, author = {Daus, Alwin and Lenarczyk, Pawel and Petti, Luisa and Münzenrieder, Niko and Knobelspies, Stefan and Cantarella, Giuseppe and Vogt, Christian and Salvatore, Giovanni A. and Luisier, Mathieu and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/270e271d6b01fe9ad82f5641ee4687d1d/nikomu}, doi = {10.1002/aelm.201700309}, interhash = {249c91af2a169331b2b32380b4d65e15}, intrahash = {70e271d6b01fe9ad82f5641ee4687d1d}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = oct, number = 12, pages = 1700309, publisher = {Wiley}, timestamp = {2023-05-22T12:02:44.000+0200}, title = {Ferroelectric-Like Charge Trapping Thin-Film Transistors and Their Evaluation as Memories and Synaptic Devices}, url = {https://doi.org/10.1002%2Faelm.201700309}, volume = 3, year = 2017 } - L. Petti, F. Loghin, G. Cantarella, C. Vogt, N. Münzenrieder, A. Abdellah, M. Becherer, T. Haeberle, A. Daus, G. Salvatore, G. Tröster, and P. Lugli, "Gain-tunable complementary common-source amplifier based on a flexible hybrid thin-film transistor technology," Ieee electron device letters, vol. 38, iss. 11, pp. 1536-1539, 2017.
[Bibtex]@article{8025387, abstract = {In this letter, we report a flexible complementary common-source (CS) amplifier comprising one p-type spray-coated single walled carbon nanotube and one n-type sputtered InGaZnO4 thin-film transistor (TFT). Bottom-gate TFTs were realized on a free-standing flexible polyimide foil using a maximum process temperature of 150 °C. The resulting CS amplifier operates at 10 V supply voltage and exhibits a gain bandwidth product of 60 kHz. Thanks to the use of a p-type TFT acting as a tunable current source load, the amplifier gain can be programmed from 3.5 up to 27.2 V/V (28.7 dB). To the best of our knowledge, this is the highest gain ever obtained for a flexible single-stage CS amplifier.}, added-at = {2023-05-22T12:02:06.000+0200}, author = {Petti, Luisa and Loghin, Florin and Cantarella, Giuseppe and Vogt, Christian and Münzenrieder, Niko and Abdellah, Alaa and Becherer, Markus and Haeberle, Tobias and Daus, Alwin and Salvatore, Giovanni and Tröster, Gerhard and Lugli, Paolo}, biburl = {https://www.bibsonomy.org/bibtex/2ba1e16def366411d489ab6d3b21a5cee/nikomu}, doi = {10.1109/LED.2017.2748596}, interhash = {04bab82811f636235f0cf41411df2589}, intrahash = {ba1e16def366411d489ab6d3b21a5cee}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = nov, number = 11, pages = {1536-1539}, timestamp = {2023-05-22T12:02:06.000+0200}, title = {Gain-Tunable Complementary Common-Source Amplifier Based on a Flexible Hybrid Thin-Film Transistor Technology}, url = {https://ieeexplore.ieee.org/document/8025387/}, volume = 38, year = 2017 } - G. Cantarella, C. Vogt, R. Hopf, N. Münzenrieder, P. Andrianakis, L. Petti, A. Daus, S. Knobelspies, L. Büthe, G. Tröster, and G. A. Salvatore, "Buckled thin-film transistors and circuits on soft elastomers for stretchable electronics," ACS applied materials & interfaces, vol. 9, iss. 34, p. 28750–28757, 2017.
[Bibtex]@article{Cantarella_2017, added-at = {2023-05-22T12:01:35.000+0200}, author = {Cantarella, Giuseppe and Vogt, Christian and Hopf, Raoul and Münzenrieder, Niko and Andrianakis, Panagiotis and Petti, Luisa and Daus, Alwin and Knobelspies, Stefan and Büthe, Lars and Tröster, Gerhard and Salvatore, Giovanni A.}, biburl = {https://www.bibsonomy.org/bibtex/2f4bfa81eadf78944e5e5142278e72dd9/nikomu}, doi = {10.1021/acsami.7b08153}, interhash = {bdc726dbddfdc9e9a00f400a69141740}, intrahash = {f4bfa81eadf78944e5e5142278e72dd9}, journal = {{ACS} Applied Materials & Interfaces}, keywords = {myown}, month = aug, number = 34, pages = {28750--28757}, publisher = {American Chemical Society ({ACS})}, timestamp = {2023-05-24T22:07:30.000+0200}, title = {Buckled Thin-Film Transistors and Circuits on Soft Elastomers for Stretchable Electronics}, url = {https://doi.org/10.1021%2Facsami.7b08153}, volume = 9, year = 2017 } - S. Knobelspies, C. Gonnelli, C. Vogt, A. Daus, N. Munzenrieder, and G. Troster, "Geometry-based tunability enhancement of flexible thin-film varactors," IEEE electron device letters, vol. 38, iss. 8, p. 1117–1120, 2017.
[Bibtex]@article{Knobelspies_2017, added-at = {2023-05-22T12:01:09.000+0200}, author = {Knobelspies, S. and Gonnelli, C. and Vogt, C. and Daus, A. and Munzenrieder, N. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/224a289f8775b1cd028f2ffcb4486b946/nikomu}, doi = {10.1109/led.2017.2718626}, interhash = {1545fa82bae88fbb6a411e95860d0685}, intrahash = {24a289f8775b1cd028f2ffcb4486b946}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = aug, number = 8, pages = {1117--1120}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T12:01:09.000+0200}, title = {Geometry-Based Tunability Enhancement of Flexible Thin-Film Varactors}, url = {https://doi.org/10.1109%2Fled.2017.2718626}, volume = 38, year = 2017 } - N. Münzenrieder, J. Costa, G. Cantarella, C. Vogt, L. Petti, A. Daus, S. Knobelspies, and G. Tröster, "Oxide thin-film electronics on carbon fiber reinforced polymer composite," Ieee electron device letters, vol. 38, iss. 8, pp. 1043-1046, 2017.
[Bibtex]@article{7959170, abstract = {In this letter, the direct fabrication of amorphous indium-gallium-zinc-oxide thin-film transistors (TFTs) and circuits on a commercial carbon fiber reinforced polymer (CFRP) substrate is demonstrated. The CFRP is encapsulated with a ≈10.6 - μm-thick resin layer, although the surface roughness and temperature sensitivity of the substrate are not ideal for the fabrication of electronic devices, we present depletion mode TFTs exhibiting a field effect mobility of 18.3 cm2V-1s-1, and a common source amplifier, providing a voltage gain of 8 dB and a -3 dB cutoff frequency of 11.5 kHz. The amplifier does not require any input bias voltage and can, hence, be directly used to condition signals originating from various transducers, e.g., piezoelectric strain sensors used to monitor the structural integrity of CFRP elements. This opens the way to the fabrication of smart mechanical CFRP parts with integrated structural integrity monitoring systems.}, added-at = {2023-05-22T12:00:25.000+0200}, author = {Münzenrieder, Niko and Costa, Júlio and Cantarella, Giuseppe and Vogt, Christian and Petti, Luisa and Daus, Alwin and Knobelspies, Stefan and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2d5c05f187cde8ac172a5236ecbdb25b6/nikomu}, doi = {10.1109/LED.2017.2720258}, interhash = {1e9cd301cc6a0d8ff0c74680d316a884}, intrahash = {d5c05f187cde8ac172a5236ecbdb25b6}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = aug, number = 8, pages = {1043-1046}, timestamp = {2023-05-22T12:00:25.000+0200}, title = {Oxide Thin-Film Electronics on Carbon Fiber Reinforced Polymer Composite}, url = {https://ieeexplore.ieee.org/document/7959170/}, volume = 38, year = 2017 } - R. Shabanpour, T. Meister, K. Ishida, B. Boroujeni, C. Carta, F. Ellinger, L. Petti, N. Münzenrieder, G. Salvatore, and G. Tröster, "A transistor model for a-igzo tft circuit design built upon the rpi-atft model," in 2017 15th ieee international new circuits and systems conference (newcas), 2017, pp. 129-132.
[Bibtex]@inproceedings{8010122, abstract = {This paper presents a compact transistor model for circuit design in a flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology. The presented model is technology specific and builds upon the Verilog-A Rensselaer Polytechnic Institute amorphous silicon TFT (RPI-aTFT) model. On the basis of extensive device characterization, we introduce appropriate new equations and parameters that enable an accurate and efficient behavioral representation of a-IGZO TFTs. In this work, we address the modelling of short channel effects, the scalability for channel lengths from 5 µm to 50 µm, as well as the presence of process variation. Using this model, a Cherry-Hooper amplifier is designed, analyzed, implemented in a flexible a-IGZO TFT technology, and characterized. Finally, to validate the presented transistor model, we compare circuit simulations and measurements of the Cherry-Hooper amplifier circuit. The amplifier provides a voltage gain of 9.5 dB and has a GBW of 7.2 MHz from a supply voltage of 6 V. The simulation using our new compact transistor model resembles the measured characteristics very well. It predicts a voltage gain of 10.4 dB and a GBW of 7.0 MHz.}, added-at = {2023-05-22T11:59:59.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Boroujeni, B. and Carta, C. and Ellinger, F. and Petti, L. and Münzenrieder, N. and Salvatore, G. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2beca438acf0b15d87f49fe7af55ca54c/nikomu}, booktitle = {2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)}, doi = {10.1109/NEWCAS.2017.8010122}, interhash = {ee73110ff1be6d7c74f613fddbd33b7d}, intrahash = {beca438acf0b15d87f49fe7af55ca54c}, keywords = {myown}, month = {June}, pages = {129-132}, timestamp = {2023-05-22T11:59:59.000+0200}, title = {A transistor model for a-IGZO TFT circuit design built upon the RPI-aTFT model}, url = {https://ieeexplore.ieee.org/document/8010122/}, year = 2017 } - A. Daus, C. Vogt, N. Münzenrieder, L. Petti, S. Knobelspies, G. Cantarella, M. Luisier, G. A. Salvatore, and G. Tröster, "Charge trapping mechanism leading to sub-60-mv/decade-swing fets," Ieee transactions on electron devices, vol. 64, iss. 7, pp. 2789-2796, 2017.
[Bibtex]@article{7938745, abstract = {In this paper, we present a novel method to reduce the subthreshold swing (SS) of FETs below 60 mV/decade. Through modeling, we directly relate trap charge movement between the gate electrode and the gate dielectric to SS reduction. We experimentally investigate the impact of charge exchange between a Cu gate electrode and a 5-nm-thick amorphous Al2O3 gate dielectric in an InGaZnO4 thin-film transistor. Positive trap charges are generated inside the gate dielectric while the semiconductor is in accumulation. During the subsequent detrapping, the SS diminishes to a minimum value of 46 mV/decade at room temperature. Furthermore, we relate the charge trapping/detrapping effects to a negative capacitance behavior of the Cu/Al2O3 metal-insulator structure.}, added-at = {2023-05-22T11:59:21.000+0200}, author = {Daus, Alwin and Vogt, Christian and Münzenrieder, Niko and Petti, Luisa and Knobelspies, Stefan and Cantarella, Giuseppe and Luisier, Mathieu and Salvatore, Giovanni A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/23ee4e71d4c7f6d5d0dd6a5967bfcfe35/nikomu}, doi = {10.1109/TED.2017.2703914}, interhash = {731e70de6edd925205a7707d822462c7}, intrahash = {3ee4e71d4c7f6d5d0dd6a5967bfcfe35}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {July}, number = 7, pages = {2789-2796}, timestamp = {2023-05-22T11:59:21.000+0200}, title = {Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs}, url = {https://ieeexplore.ieee.org/document/7938745/}, volume = 64, year = 2017 } - N. Münzenrieder, C. Vogt, L. Petti, G. Salvatore, G. Cantarella, L. Büthe, and G. Tröster, "Oxide thin-film transistors on fibers for smart textiles," Technologies, vol. 5, iss. 2, p. 31, 2017.
[Bibtex]@article{M_nzenrieder_2017, added-at = {2023-05-22T11:58:30.000+0200}, author = {Münzenrieder, Niko and Vogt, Christian and Petti, Luisa and Salvatore, Giovanni and Cantarella, Giuseppe and Büthe, Lars and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2e6eb9475dd13e77207b4087bef83f78f/nikomu}, description = {Technologies | Free Full-Text | Oxide Thin-Film Transistors on Fibers for Smart Textiles}, doi = {10.3390/technologies5020031}, interhash = {34be5250a636019b5c6411c4b4da31f0}, intrahash = {e6eb9475dd13e77207b4087bef83f78f}, journal = {Technologies}, keywords = {myown}, month = jun, number = 2, pages = 31, publisher = {{MDPI} {AG}}, timestamp = {2023-05-22T13:09:11.000+0200}, title = {Oxide Thin-Film Transistors on Fibers for Smart Textiles}, url = {https://doi.org/10.3390%2Ftechnologies5020031}, volume = 5, year = 2017 } - L. Büthe, C. Vogt, L. Petti, G. Cantarella, N. Münzenrieder, and G. Tröster, "Fabrication, modeling, and evaluation of a digital output tilt sensor with conductive microspheres," Ieee sensors journal, vol. 17, iss. 12, pp. 3635-3643, 2017.
[Bibtex]@article{7907264, abstract = {Recent advances in wearable computing ask for bendable and conformable electronic circuits and sensors, allowing an easy integration into everyday life objects. Here, we present a novel flexible tilt sensor on plastic using conductive microspheres as gravity sensitive pendulum. The sensor provides a digital output of the measurement signal without the need for any additional electronics (e.g., amplifiers) close to the sensing structure. The sensor is fabricated on a free-standing polyimide foil with SU-8 photoresist defining the cavity for the pendulum. The pendulum consists of freely movable conductive microspheres which, depending on the sense of gravity, connect different electric contacts patterned on the polyimide foil. We develop a model of the sensor and identify the amount of microspheres as one of the key parameters in the sensor design, which influences the performance of the sensor. The presented tilt sensor with eight contacts achieves an angular resolution of 22.5° with a hysteresis of 10° and less at a tilt of the sensor plane of 50°. Analysis of the microsphere movements reveals a response time of the sensor at ~ 50 ms.}, added-at = {2023-05-22T11:58:15.000+0200}, author = {Büthe, Lars and Vogt, Christian and Petti, Luisa and Cantarella, Giuseppe and Münzenrieder, Niko and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2c00a835d47aa06f0d415551eb501f980/nikomu}, doi = {10.1109/JSEN.2017.2697208}, interhash = {d920dad6d8ff081f6aced3130fd16c91}, intrahash = {c00a835d47aa06f0d415551eb501f980}, issn = {1558-1748}, journal = {IEEE Sensors Journal}, keywords = {myown}, month = {June}, number = 12, pages = {3635-3643}, timestamp = {2023-05-22T11:58:15.000+0200}, title = {Fabrication, Modeling, and Evaluation of a Digital Output Tilt Sensor With Conductive Microspheres}, url = {https://ieeexplore.ieee.org/document/7907264/}, volume = 17, year = 2017 } - L. Petti, P. Pattanasattayavong, Y. Lin, N. Münzenrieder, G. Cantarella, N. Yaacobi-Gross, F. Yan, G. Tröster, and T. D. Anthopoulos, "Solution-processed p-type copper(i) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits," Applied physics letters, vol. 110, iss. 11, p. 113504, 2017.
[Bibtex]@article{Petti_2017, added-at = {2023-05-22T11:57:28.000+0200}, author = {Petti, Luisa and Pattanasattayavong, Pichaya and Lin, Yen-Hung and Münzenrieder, Niko and Cantarella, Giuseppe and Yaacobi-Gross, Nir and Yan, Feng and Tröster, Gerhard and Anthopoulos, Thomas D.}, biburl = {https://www.bibsonomy.org/bibtex/2d06de443eb6489547b7c4b5f2633bb46/nikomu}, description = {Solution-processed p-type copper(I) thiocyanate (CuSCN) for low-voltage flexible thin-film transistors and integrated inverter circuits | Applied Physics Letters | AIP Publishing}, doi = {10.1063/1.4978531}, interhash = {de3d6c14353d1261e935585ea358f45a}, intrahash = {d06de443eb6489547b7c4b5f2633bb46}, journal = {Applied Physics Letters}, keywords = {myown}, month = mar, number = 11, pages = 113504, publisher = {{AIP} Publishing}, timestamp = {2023-05-22T13:09:17.000+0200}, title = {Solution-processed p-type copper(I) thiocyanate ({CuSCN}) for low-voltage flexible thin-film transistors and integrated inverter circuits}, url = {https://doi.org/10.1063%2F1.4978531}, volume = 110, year = 2017 }
2016
- T. Meister, K. Ishida, C. Carta, R. Shabanpour, B. K.-Boroujeni, N. Münzenrieder, L. Petti, G. A. Salvatore, G. Schmidt, P. Ghesquiere, S. Kiefl, G. De Toma, T. Faetti, A. C. Hübler, G. Tröster, and F. Ellinger, "3.5mw 1mhz am detector and digitally-controlled tuner in a-igzo tft for wireless communications in a fully integrated flexible system for audio bag," in 2016 ieee symposium on vlsi circuits (vlsi-circuits), 2016, pp. 1-2.
[Bibtex]@inproceedings{7573508, abstract = {We developed a fully flexible AM (amplitude modulation) radio receiver suitable for integration in an “audio bag”, by exploiting the heterogeneous integration of several fully flexible technologies. In this paper, we present a 2.9 mW 2-bit digitally-controlled tuner with a 576 kHz tuning range, a 3.5 mW 1 MHz AM detector and their integration in such a fully-flexible system. Their optimized power consumptions are essential because thin flexible batteries and organic solar cells serve as power supply. The circuits are fabricated in a low-temperature amorphous indium gallium zinc oxide (a-IGZO) technology. For the system integration textile techniques as well as flexible inkjet-printed packages and printed circuit boards (IPCBs) were used.}, added-at = {2023-05-22T11:57:11.000+0200}, author = {Meister, T. and Ishida, K. and Carta, C. and Shabanpour, R. and K.-Boroujeni, B. and Münzenrieder, N. and Petti, L. and Salvatore, G.A. and Schmidt, G. and Ghesquiere, P. and Kiefl, S. and De Toma, G. and Faetti, T. and Hübler, A.C. and Tröster, G. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/27a8e53fd3bf672c9a26496ad27bb7c76/nikomu}, booktitle = {2016 IEEE Symposium on VLSI Circuits (VLSI-Circuits)}, doi = {10.1109/VLSIC.2016.7573508}, interhash = {9a71c21ed3a22976400e91167882f375}, intrahash = {7a8e53fd3bf672c9a26496ad27bb7c76}, keywords = {myown}, month = {June}, pages = {1-2}, timestamp = {2023-05-22T11:57:11.000+0200}, title = {3.5mW 1MHz AM detector and digitally-controlled tuner in a-IGZO TFT for wireless communications in a fully integrated flexible system for audio bag}, url = {https://ieeexplore.ieee.org/document/7573508/}, year = 2016 } - N. Münzenrieder, D. Karnaushenko, L. Petti, G. Cantarella, C. Vogt, L. Büthe, D. D. Karnaushenko, O. G. Schmidt, D. Makarov, and G. Tröster, "Entirely flexible on-site conditioned magnetic sensorics," Advanced electronic materials, vol. 2, iss. 8, p. 1600188, 2016.
[Bibtex]@article{M_nzenrieder_2016, added-at = {2023-05-22T11:56:33.000+0200}, author = {Münzenrieder, Niko and Karnaushenko, Daniil and Petti, Luisa and Cantarella, Giuseppe and Vogt, Christian and Büthe, Lars and Karnaushenko, Dmitriy D. and Schmidt, Oliver G. and Makarov, Denys and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/223a68303e812406c168b45c621444f17/nikomu}, doi = {10.1002/aelm.201600188}, interhash = {2d3bdd0c51c5e82447aca2bf8257ebe5}, intrahash = {23a68303e812406c168b45c621444f17}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = jun, number = 8, pages = 1600188, publisher = {Wiley}, timestamp = {2023-05-22T11:56:33.000+0200}, title = {Entirely Flexible On-Site Conditioned Magnetic Sensorics}, url = {https://doi.org/10.1002%2Faelm.201600188}, volume = 2, year = 2016 } - C. Vogt, J. Reber, D. Waltisberg, L. Büthe, J. Marjanovic, N. Münzenrieder, K. P. Pruessmann, and G. Tröster, "A wearable bluetooth le sensor for patient monitoring during mri scans," 2016 ieee 38th annual international conference of the engineering in medicine and biology society (embc), pp. 4975-4978, 2016.
[Bibtex]@article{7591844, abstract = {This paper presents a working prototype of a wearable patient monitoring device capable of recording the heart rate, blood oxygen saturation, surface temperature and humidity during an magnetic resonance imaging (MRI) experiment. The measured values are transmitted via Bluetooth low energy (LE) and displayed in real time on a smartphone on the outside of the MRI room. During 7 MRI image acquisitions of at least 1 min and a total duration of 25 min no Bluetooth data packets were lost. The raw measurements of the light intensity for the photoplethysmogram based heart rate measurement shows an increased noise floor by 50LSB (least significant bit) during the MRI operation, whereas the temperature and humidity readings are unaffected. The device itself creates a magnetic resonance (MR) signal loss with a radius of 14 mm around the device surface and shows no significant increase in image noise of an acquired MRI image due to its radio frequency activity. This enables continuous and unobtrusive patient monitoring during MRI scans.}, added-at = {2023-05-22T11:56:05.000+0200}, author = {Vogt, Christian and Reber, Jonas and Waltisberg, Daniel and Büthe, Lars and Marjanovic, Josip and Münzenrieder, Niko and Pruessmann, Klaas P. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/29e9295d446d054655a5e21c706969a48/nikomu}, doi = {10.1109/EMBC.2016.7591844}, interhash = {79aeece00b68f2292b5b05ff96beb97e}, intrahash = {9e9295d446d054655a5e21c706969a48}, issn = {1558-4615}, journal = {2016 IEEE 38th Annual International Conference of the Engineering in Medicine and Biology Society (EMBC)}, keywords = {myown}, month = aug, pages = {4975-4978}, timestamp = {2024-04-15T15:46:58.000+0200}, title = {A wearable bluetooth LE sensor for patient monitoring during MRI scans}, url = {https://ieeexplore.ieee.org/document/7591844/}, year = 2016 } - G. Cantarella, K. Ishida, L. Petti, N. Münzenrieder, T. Meister, R. Shabanpour, C. Carta, F. Ellinger, G. Tröster, and G. A. Salvatore, "Flexible in–ga–zn–o-based circuits with two and three metal layers: simulation and fabrication study," Ieee electron device letters, vol. 37, iss. 12, pp. 1582-1585, 2016.
[Bibtex]@article{7604130, abstract = {The quest for high-performance flexible circuits call for scaling of the minimum feature size in thin-film transistors (TFTs). Although reduced channel lengths can guarantee an improvement in the electrical properties of the devices, proper design rules also play a crucial role to minimize parasitics when designing fast circuits. In this letter, systematic computer-aided design simulations have guided the fabrication of high-performance flexible operational amplifiers (opamps) and logic circuits based on indium–gallium–zinc-oxide TFTs. In particular, the performance improvements due to the use of an additional third metal layer for the interconnections have been estimated for the first time. Encouraged by the simulated enhancements resulting by the decreased parasitic resistances and capacitances, both TFTs and circuits have been realized on a free-standing 50- $\mu \text{m}$ -thick polymide foil using three metal layers. Despite the thicker layer stack, the TFTs have shown mechanical stability down to 5-mm bending radii. Moreover, the opamps and the logic circuits have yielded improved electrical performance with respect to the architecture with two metal layers: gain-bandwidth-product increased by 16.9%, for the first one, and propagation delay ( $t_{pd}$ ) decreased by 43%, for the latter one.}, added-at = {2023-05-22T11:55:15.000+0200}, author = {Cantarella, G. and Ishida, K. and Petti, L. and Münzenrieder, N. and Meister, T. and Shabanpour, R. and Carta, C. and Ellinger, F. and Tröster, G. and Salvatore, G. A.}, biburl = {https://www.bibsonomy.org/bibtex/222e7b03399856ba12e9b2cd0def89fa0/nikomu}, doi = {10.1109/LED.2016.2619738}, interhash = {6b7ce475631e58c90c27dd97fe324ccf}, intrahash = {22e7b03399856ba12e9b2cd0def89fa0}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = dec, number = 12, pages = {1582-1585}, timestamp = {2023-05-22T11:55:15.000+0200}, title = {Flexible In–Ga–Zn–O-Based Circuits With Two and Three Metal Layers: Simulation and Fabrication Study}, url = {https://ieeexplore.ieee.org/document/7604130/}, volume = 37, year = 2016 } - A. Daus, C. Vogt, N. Münzenrieder, L. Petti, S. Knobelspies, G. Cantarella, M. Luisier, G. A. Salvatore, and G. Tröster, "Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators," Journal of applied physics, vol. 120, iss. 24, p. 244501, 2016.
[Bibtex]@article{Daus_2016, added-at = {2023-05-22T11:54:24.000+0200}, author = {Daus, Alwin and Vogt, Christian and Münzenrieder, Niko and Petti, Luisa and Knobelspies, Stefan and Cantarella, Giuseppe and Luisier, Mathieu and Salvatore, Giovanni A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/29f3e009755da41762905abb991ecdf10/nikomu}, description = {Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators | Journal of Applied Physics | AIP Publishing}, doi = {10.1063/1.4972475}, interhash = {7544bd541dd6e1d5a26002d60f1edc54}, intrahash = {9f3e009755da41762905abb991ecdf10}, journal = {Journal of Applied Physics}, keywords = {myown}, month = dec, number = 24, pages = 244501, publisher = {{AIP} Publishing}, timestamp = {2023-05-22T13:09:23.000+0200}, title = {Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators}, url = {https://doi.org/10.1063%2F1.4972475}, volume = 120, year = 2016 } - K. Ishida, T. Meister, R. Shabanpour, B. K. Boroujeni, C. Carta, G. Cantarella, L. Petti, N. Mtozenrieder, G. A. Salvatore, G. Troster, and F. Ellinger, "Radio frequency electronics in a-igzo tft technology," in 2016 23rd international workshop on active-matrix flatpanel displays and devices (am-fpd), 2016, pp. 273-276.
[Bibtex]@inproceedings{7543689, abstract = {This paper reviews the recent progress of active high-frequency electronics on plastic, and gives an outlook towards future advances of radio-frequency electronics in the amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistor (TFT) technology. Our a-IGZO technology is mechanically flexible, bendable and stretchable. A 0.5 μm TFT achieved a measured transit frequency of 138 MHz. We have presented several high-frequency circuits integrated in this a-IGZO technology, including several RF amplifiers and a fully-integrated AM receiver. The receiver consists of a four-stage cascode amplifier, an amplitude detector, a baseband amplifier, and a filter. At a DC current of 7.2 mA and a supply of 5 V, a conversion gain above 15dB was measured from 2 to 20MHz. Based on these works, we are investigating a wireless transmitter to be fully integrated on a plastic film. Some simulation results of a ring-oscillator based on-off-keying modulator and an LC voltage controlled oschillator under investigation are presented.}, added-at = {2023-05-22T11:54:01.000+0200}, author = {Ishida, K. and Meister, T. and Shabanpour, R. and Boroujeni, B. K. and Carta, C. and Cantarella, G and Petti, L. and Mtozenrieder, N. and Salvatore, G A. and Troster, G and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/2b411c47be7139ee10850108a0a599b72/nikomu}, booktitle = {2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)}, doi = {10.1109/AM-FPD.2016.7543689}, interhash = {484f6199b8194b99eeab72e80f2c7360}, intrahash = {b411c47be7139ee10850108a0a599b72}, keywords = {myown}, month = {July}, pages = {273-276}, timestamp = {2023-05-22T11:54:01.000+0200}, title = {Radio frequency electronics in a-IGZO TFT technology}, url = {https://ieeexplore.ieee.org/document/7543689/}, year = 2016 } - L. Petti, N. Münzenrieder, C. Vogt, H. Faber, L. Büthe, G. Cantarella, F. Bottacchi, T. D. Anthopoulos, and G. Tröster, "Metal oxide semiconductor thin-film transistors for flexible electronics," Applied physics reviews, vol. 3, iss. 2, p. 21303, 2016.
[Bibtex]@article{Petti_2016, added-at = {2023-05-22T11:51:47.000+0200}, author = {Petti, Luisa and Münzenrieder, Niko and Vogt, Christian and Faber, Hendrik and Büthe, Lars and Cantarella, Giuseppe and Bottacchi, Francesca and Anthopoulos, Thomas D. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2173c205cf17e2c7f5a71daabc2eaab71/nikomu}, description = {Metal oxide semiconductor thin-film transistors for flexible electronics | Applied Physics Reviews | AIP Publishing}, doi = {10.1063/1.4953034}, interhash = {a157fee43ec6fddc27d7d5e1c983ffa7}, intrahash = {173c205cf17e2c7f5a71daabc2eaab71}, journal = {Applied Physics Reviews}, keywords = {myown}, month = jun, number = 2, pages = 021303, publisher = {{AIP} Publishing}, timestamp = {2023-05-22T11:51:47.000+0200}, title = {Metal oxide semiconductor thin-film transistors for flexible electronics}, url = {https://doi.org/10.1063%2F1.4953034}, volume = 3, year = 2016 } - S. Knobelspies, A. Daus, G. Cantarella, L. Petti, N. Münzenrieder, G. Tröster, and G. A. Salvatore, "Flexible a-igzo phototransistor for instantaneous and cumulative uv-exposure monitoring for skin health," Advanced electronic materials, vol. 2, iss. 10, p. 1600273, 2016.
[Bibtex]@article{Knobelspies_2016, added-at = {2023-05-22T11:51:36.000+0200}, author = {Knobelspies, Stefan and Daus, Alwin and Cantarella, Giuseppe and Petti, Luisa and Münzenrieder, Niko and Tröster, Gerhard and Salvatore, Giovanni Antonio}, biburl = {https://www.bibsonomy.org/bibtex/21e9196a2ab9103d8fa6f406367673af6/nikomu}, doi = {10.1002/aelm.201600273}, interhash = {afba259ee3456d93d941d23c50ec12e7}, intrahash = {1e9196a2ab9103d8fa6f406367673af6}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = sep, number = 10, pages = 1600273, publisher = {Wiley}, timestamp = {2023-05-22T11:51:36.000+0200}, title = {Flexible a-IGZO Phototransistor for Instantaneous and Cumulative UV-Exposure Monitoring for Skin Health}, url = {https://doi.org/10.1002%2Faelm.201600273}, volume = 2, year = 2016 } - T. Meister, K. Ishida, R. Shabanpour, B. K. Boroujeni, C. Carta, N. Münzenrieder, L. Petti, G. Cantarella, G. A. Salvatore, G. Tröster, and F. Ellinger, "20.3db 0.39mw am detector with single-transistor active inductor in bendable a-igzo tft," in 2016 46th european solid-state device research conference (essderc), 2016, pp. 71-74.
[Bibtex]@inproceedings{7599591, abstract = {This paper presents an AM detector circuit in a bendable a-IGZO TFT technology. The circuit is based on a common-source stage loaded with a single-ended active inductor, which uses only one active transistor. This active inductor is the key element for the achieved circuit performance. The detector circuit consumes only 0.39 mW, which is almost a tenfold improvement over previous works in the same technology and crucial for mobile and wearable applications. At the same time it has the smallest chip area. The detector provides a conversion gain of 20.3 dB and an RF −3dB-bandwidth of around 7.5 MHz. At fc=13.56 MHz it has 11.6 dB gain, which also allows its use in this unlicensed ISM radio band for RFID and smart label applications.}, added-at = {2023-05-22T11:51:01.000+0200}, author = {Meister, Tilo and Ishida, Koichi and Shabanpour, Reza and Boroujeni, Bahman K. and Carta, Corrado and Münzenrieder, Niko and Petti, Luisa and Cantarella, Giuseppe and Salvatore, Giovanni A. and Tröster, Gerhard and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/2910fdbe0ebea6840eeef6411661bd675/nikomu}, booktitle = {2016 46th European Solid-State Device Research Conference (ESSDERC)}, doi = {10.1109/ESSDERC.2016.7599591}, interhash = {45f421058140bb1d32edff8afd656a82}, intrahash = {910fdbe0ebea6840eeef6411661bd675}, issn = {2378-6558}, keywords = {myown}, month = {Sep.}, pages = {71-74}, timestamp = {2023-05-22T11:51:01.000+0200}, title = {20.3dB 0.39mW AM detector with single-transistor active inductor in bendable a-IGZO TFT}, url = {https://ieeexplore.ieee.org/document/7599591/}, year = 2016 } - R. Shabanpour, T. Meister, K. Ishida, B. Kheradmand-Boroujeni, C. Carta, F. Ellinger, L. Petti, N. Münzenrieder, G. A. Salvatore, and G. Tröster, "Design and analysis of high-gain amplifiers in flexible self-aligned a-igzo thin-film transistor technology," Analog integrated circuits and signal processing, vol. 87, iss. 2, p. 213–222, 2016.
[Bibtex]@article{Shabanpour2016, abstract = {This paper presents two high-gain amplifiers fabricated in a flexible self-aligned amorphous indium gallium zinc oxide thin-film transistor (TFT) technology. One common-source amplifier relies on positive feedback to provide a voltage gain of 17 dB, and a bandwidth of 79 kHz from a dc power of only 0.76 mW. One cascode amplifier provides a voltage gain of 25 dB, and a bandwidth of 220 kHz from a dc power of 2.32 mW. The chip areas of the amplifiers are 7.5 and 10.3 mm2, respectively. By using a gain-enhancement technique in the first amplifier, gain, dc power consumption, and chip area are greatly improved. The presented amplifiers are designed for using as audio pre-amplifiers in a radio receiver. The presented measurements confirm that the amplifiers meet the requirements for this purpose. The circuits are designed using the Verilog-A Rensselaer Polytechnic Institute-amorphous TFT model; circuit simulations are also presented for comparison with the hardware characterization. Additionally, the impact of process variations on the amplifiers is analyzed and discussed in details.}, added-at = {2023-05-22T11:49:51.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Kheradmand-Boroujeni, B. and Carta, C. and Ellinger, F. and Petti, L. and M{\"u}nzenrieder, N. and Salvatore, G. A. and Tr{\"o}ster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2598f844b204f703396ae9f12a1dc2108/nikomu}, day = 01, description = {Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology | SpringerLink}, doi = {10.1007/s10470-015-0655-3}, interhash = {885c578cf45eb14bc706d3bb2dada77d}, intrahash = {598f844b204f703396ae9f12a1dc2108}, issn = {1573-1979}, journal = {Analog Integrated Circuits and Signal Processing}, keywords = {myown}, month = may, number = 2, pages = {213--222}, timestamp = {2023-05-22T11:49:51.000+0200}, title = {Design and analysis of high-gain amplifiers in flexible self-aligned a-IGZO thin-film transistor technology}, url = {https://doi.org/10.1007/s10470-015-0655-3}, volume = 87, year = 2016 }
2015
- K. Ishida, R. Shabanpour, T. Meister, B. K. Boroujeni, C. Carta, F. Ellinger, L. Petti, N. Münzenrieder, G. A. Salvatore, and G. Tröster, "20 mhz carrier frequency am receiver in flexible a-igzo tft technology with textile antennas," in 2015 ieee international symposium on radio-frequency integration technology (rfit), 2015, pp. 142-144.
[Bibtex]@inproceedings{7377914, abstract = {This paper presents an AM receiver implemented in a flexible a-IGZO TFT technology. The circuit consists of a four-stage cascode amplifier at the RF input, a detector based on a source follower, and a common-source circuit for the baseband amplification. The measured conversion gain is very flat against frequency and exceeds 15 dB for carrier frequencies ranging from 2 to 20 MHz, which covers a relevant portion of the shortwave radio band. The 3 dB-bandwidth of the baseband signal ranges from 400 Hz to 10 kHz: this is comparable to the so-called voice band and is suitable to low-rate data communications. Additionally, the AM receiver is tested in combination with two textile antennas. The flexible a-IGZO receiver successfully detected the baseband signal through the textile antennas, demonstrating for the first time wireless transmission for this class of technologies.}, added-at = {2023-05-22T11:49:57.000+0200}, author = {Ishida, K. and Shabanpour, R. and Meister, T. and Boroujeni, B. K. and Carta, C. and Ellinger, F. and Petti, L. and Münzenrieder, N. and Salvatore, G. A. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/232ce041a339f1519c7970a22ec662ef6/nikomu}, booktitle = {2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)}, doi = {10.1109/RFIT.2015.7377914}, interhash = {f02fb90886611ac341fc6dee48d7140d}, intrahash = {32ce041a339f1519c7970a22ec662ef6}, keywords = {myown}, month = aug, pages = {142-144}, timestamp = {2023-05-22T11:49:57.000+0200}, title = {20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas}, url = {https://ieeexplore.ieee.org/document/7377914/}, year = 2015 } - C. Vogt, L. Buthe, L. Petti, G. Cantarella, N. Munzenrieder, A. Daus, and G. Troster, "Design and simulation of a 800 mbit/s data link for magnetic resonance imaging wearables," in 2015 37th annual international conference of the IEEE engineering in medicine and biology society (EMBC), 2015.
[Bibtex]@inproceedings{Vogt_2015, added-at = {2023-05-22T11:49:01.000+0200}, author = {Vogt, Christian and Buthe, Lars and Petti, Luisa and Cantarella, Giuseppe and Munzenrieder, Niko and Daus, Alwin and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2f3e186d4a85a14a6b28452a065dcb91f/nikomu}, booktitle = {2015 37th Annual International Conference of the {IEEE} Engineering in Medicine and Biology Society ({EMBC})}, doi = {10.1109/embc.2015.7318612}, interhash = {51a5188a388e3a17151e0bc40b4397d1}, intrahash = {f3e186d4a85a14a6b28452a065dcb91f}, keywords = {myown}, month = aug, publisher = {{IEEE}}, timestamp = {2023-05-22T11:49:01.000+0200}, title = {Design and simulation of a 800 Mbit/s data link for magnetic resonance imaging wearables}, url = {https://doi.org/10.1109%2Fembc.2015.7318612}, year = 2015 } - N. Münzenrieder, G. Cantarella, C. Vogt, L. Petti, L. Büthe, G. A. Salvatore, Y. Fang, R. Andri, Y. Lam, R. Libanori, D. Widner, A. R. Studart, and G. Tröster, "Stretchable and conformable oxide thin-film electronics," Advanced electronic materials, vol. 1, iss. 3, p. 1400038, 2015.
[Bibtex]@article{M_nzenrieder_2015, added-at = {2023-05-22T11:48:24.000+0200}, author = {Münzenrieder, Niko and Cantarella, Giuseppe and Vogt, Christian and Petti, Luisa and Büthe, Lars and Salvatore, Giovanni A. and Fang, Yang and Andri, Renzo and Lam, Yawhuei and Libanori, Rafael and Widner, Daniel and Studart, Andr{\'{e}} R. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/275134c70d7d02b3ee7e2109953ee0739/nikomu}, doi = {10.1002/aelm.201400038}, interhash = {06d8da097ebdb78edbfc836c11a20c28}, intrahash = {75134c70d7d02b3ee7e2109953ee0739}, journal = {Advanced Electronic Materials}, keywords = {myown}, month = feb, number = 3, pages = 1400038, publisher = {Wiley}, timestamp = {2023-05-22T11:48:24.000+0200}, title = {Stretchable and Conformable Oxide Thin-Film Electronics}, url = {https://doi.org/10.1002%2Faelm.201400038}, volume = 1, year = 2015 } - F. Ellinger, K. Ishida, R. Shabanpour, T. Meister, B. K. Boroujeni, C. Carta, L. Petti, G. A. Salvatore, G. Tröster, and N. Münzenrieder, "Radio frequency electronics on plastic," in 2015 sbmo/ieee mtt-s international microwave and optoelectronics conference (imoc), 2015, pp. 1-5.
[Bibtex]@inproceedings{7369178, abstract = {In this paper the recent progress of active high frequency electronics on plastic is discussed. This technology is mechanically flexible, bendable, stretchable and does not need any rigid chips. Indium Gallium Zinc Oxide (IGZO) technology is applied. At 2 V supply and gate length of 0.5 µm, the thin-film transistors (TFTs) yield a measured transit frequency of 138 MHz. Our scalable TFT compact simulation model shows good agreement with measurements. To achieve a sufficiently high yield, TFTs with gate lengths of around 5 µm are used for the circuit design. A Cherry Hopper amplifier with 3.5 MHz bandwidth, 10 dB gain and 5 mW dc power is presented. The fully integrated receiver covering a plastic foil area of 3 × 9 mm2 includes a four stage cascode amplifier, an amplitude detector, a baseband amplifier and a filter. At a dc current of 7.2 mA and a supply of 5 V, a bandwidth of 2 – 20 MHz and a gain beyond 15 dB were measured. Finally, an outlook regarding future advancements of high frequency electronics on plastic is given.}, added-at = {2023-05-22T11:47:58.000+0200}, author = {Ellinger, F. and Ishida, K. and Shabanpour, R. and Meister, T. and Boroujeni, B. K. and Carta, C. and Petti, L. and Salvatore, G. A. and Tröster, G. and Münzenrieder, N.}, biburl = {https://www.bibsonomy.org/bibtex/24ed1f17bf8e705c3e236ead679133157/nikomu}, booktitle = {2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC)}, doi = {10.1109/IMOC.2015.7369178}, interhash = {555dbb31915317aac3e824d4e3334df9}, intrahash = {4ed1f17bf8e705c3e236ead679133157}, keywords = {myown}, month = nov, pages = {1-5}, timestamp = {2023-05-22T11:47:58.000+0200}, title = {Radio frequency electronics on plastic}, url = {https://ieeexplore.ieee.org/document/7369178/}, year = 2015 } - M. Varga, N. Munzenrieder, C. Vogt, and G. Troster, "Programmable e-textile composite circuit," in 2015 IEEE 65th electronic components and technology conference (ECTC), 2015.
[Bibtex]@inproceedings{Varga_2015, added-at = {2023-05-22T11:46:58.000+0200}, author = {Varga, Matija and Munzenrieder, Niko and Vogt, Christian and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2e996d517323701d3c57eafda4f84fef2/nikomu}, booktitle = {2015 {IEEE} 65th Electronic Components and Technology Conference ({ECTC})}, doi = {10.1109/ectc.2015.7159665}, interhash = {ed40d03ca62778ee848540a7d8878f79}, intrahash = {e996d517323701d3c57eafda4f84fef2}, keywords = {myown}, month = may, publisher = {{IEEE}}, timestamp = {2023-05-22T11:46:58.000+0200}, title = {Programmable e-textile composite Circuit}, url = {https://doi.org/10.1109%2Fectc.2015.7159665}, year = 2015 } - L. Petti, H. Faber, N. Münzenrieder, G. Cantarella, P. A. Patsalas, G. Tröster, and T. D. Anthopoulos, "Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits," Applied physics letters, vol. 106, iss. 9, p. 92105, 2015.
[Bibtex]@article{Petti_2015, added-at = {2023-05-22T11:45:40.000+0200}, author = {Petti, Luisa and Faber, Hendrik and Münzenrieder, Niko and Cantarella, Giuseppe and Patsalas, Panos A. and Tröster, Gerhard and Anthopoulos, Thomas D.}, biburl = {https://www.bibsonomy.org/bibtex/2c2d2a554b9e30a1f93990519c938492e/nikomu}, doi = {10.1063/1.4914085}, interhash = {96a5f63d47b1569de147f7cca4126991}, intrahash = {c2d2a554b9e30a1f93990519c938492e}, journal = {Applied Physics Letters}, keywords = {myown}, month = mar, number = 9, pages = 092105, publisher = {{AIP} Publishing}, timestamp = {2023-05-22T11:45:40.000+0200}, title = {Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits}, url = {https://doi.org/10.1063%2F1.4914085}, volume = 106, year = 2015 } - L. Petti, A. Frutiger, N. Münzenrieder, G. A. Salvatore, L. Büthe, C. Vogt, G. Cantarella, and G. Tröster, "Flexible quasi-vertical in-ga-zn-o thin-film transistor with 300-nm channel length," Ieee electron device letters, vol. 36, iss. 5, pp. 475-477, 2015.
[Bibtex]@article{7073606, abstract = {In this letter, we report a flexible Indium-Gallium-Zinc-Oxide quasi-vertical thin-film transistor (QVTFT) with 300-nm channel length, fabricated on a free-standing polyimide foil, using a low-temperature process <;150 °C. A bilayer lift-off process is used to structure a spacing layer with a tilted sidewall and the drain contact on top of the source electrode. The resulting quasi-vertical profile ensures a good coverage of the successive device layers. The fabricated flexible QVTFT exhibits an ON/OFF current ratio of 104, a threshold voltage of 1.5 V, a maximum transconductance of 0.73 μS μm-1, and a total gate capacitance of 76 nF μm-1. From S-parameter measurements, we extracted a transit frequency of 1.5 MHz. Furthermore, the flexible QVTFT is fully operational when bent to a tensile radius of 5 mm.}, added-at = {2023-05-22T11:45:13.000+0200}, author = {Petti, Luisa and Frutiger, Andreas and Münzenrieder, Niko and Salvatore, Giovanni A. and Büthe, Lars and Vogt, Christian and Cantarella, Giuseppe and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2ed344db9cbbffec5cd82dcff0284ed28/nikomu}, doi = {10.1109/LED.2015.2418295}, interhash = {20d5f3465b41a32112b44df49aa7e44c}, intrahash = {ed344db9cbbffec5cd82dcff0284ed28}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = may, number = 5, pages = {475-477}, timestamp = {2023-05-22T11:45:13.000+0200}, title = {Flexible Quasi-Vertical In-Ga-Zn-O Thin-Film Transistor With 300-nm Channel Length}, url = {https://ieeexplore.ieee.org/document/7073606/}, volume = 36, year = 2015 } - G. Cantarella, N. Münzenrieder, L. Petti, C. Vogt, L. Büthe, G. A. Salvatore, A. Daus, and G. Tröster, "Flexible in–ga–zn–o thin-film transistors on elastomeric substrate bent to 2.3% strain," Ieee electron device letters, vol. 36, iss. 8, pp. 781-783, 2015.
[Bibtex]@article{7119557, abstract = {In this letter, a photolithographic fabrication process is used to manufacture indium-gallium-zinc-oxide thin-film transistors (TFTs) with mobilities > 10 cm2/Vs directly on a 80 μm thick polydimethylsiloxane (PDMS) substrate. Once the fabrication is completed, the PDMS is detached from a silicon wafer used as carrier substrate. Due to the thermal mismatch between silicon and PDMS, the release results in a reduction of the PDMS area by 7.2%, which leads to the formation of out-of-plane wrinkles on the TFT surface. The reflattening of the wrinkles under tensile strain enables device functionality, while the TFTs are bent up to 2.3% strain. Mechanical stability of the TFTs with our wrinkled approach is shown by electrically characterizing them at bending radii down to 6 mm.}, added-at = {2023-05-22T11:44:24.000+0200}, author = {Cantarella, G. and Münzenrieder, N. and Petti, L. and Vogt, C. and Büthe, L. and Salvatore, G. A. and Daus, A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2efe9bb4e236f3099eb5942357aebe266/nikomu}, doi = {10.1109/LED.2015.2442271}, interhash = {f1deb73f600cf2b8f540ef756b50e34c}, intrahash = {efe9bb4e236f3099eb5942357aebe266}, issn = {1558-0563}, journal = {IEEE Electron Device Letters}, keywords = {myown}, month = aug, number = 8, pages = {781-783}, timestamp = {2023-05-22T11:44:24.000+0200}, title = {Flexible In–Ga–Zn–O Thin-Film Transistors on Elastomeric Substrate Bent to 2.3% Strain}, url = {https://ieeexplore.ieee.org/document/7119557/}, volume = 36, year = 2015 } - L. Büthe, C. Vogt, L. Petti, G. Cantarella, G. Tröster, and N. Munzenrieder, "Digital output flexible tilt sensor with conductive microspheres," in 2015 ieee sensors, 2015, pp. 1-4.
[Bibtex]@inproceedings{7370308, abstract = {Recent advances in wearable computing ask for bendable and conformable electronic circuits and sensors, allowing an easy integration into everyday life objects. Here, we present a novel flexible tilt sensor on plastic using several conductive microspheres as gravity sensitive pendulum. The sensor provides a digital output of the measurement signal without the need for any additional electronics (e.g. amplifiers) close to the sensor. The sensor is fabricated on a free-standing polyimide foil with SU-8 photoresist defining the cavity for the pendulum. The pendulum consists of freely movable conductive microspheres which, depending on the sense of gravity, connect different electric contacts patterned on the polyimide foil. The shown tilt sensors with 4 and 8 contacts each achieve an angular resolution of 45° and 22.5°, respectively. The sensors exhibit a linear behaviour with a hysteresis of 10° max.}, added-at = {2023-05-22T11:41:38.000+0200}, author = {Büthe, Lars and Vogt, Christian and Petti, Luisa and Cantarella, Giuseppe and Tröster, Gerhard and Munzenrieder, Niko}, biburl = {https://www.bibsonomy.org/bibtex/2aac19ae9e91b4cab7f48d0f8a8229707/nikomu}, booktitle = {2015 IEEE SENSORS}, doi = {10.1109/ICSENS.2015.7370308}, interhash = {b6b14a2fe5cfc9b52012e7708c046f00}, intrahash = {aac19ae9e91b4cab7f48d0f8a8229707}, keywords = {myown}, month = nov, pages = {1-4}, timestamp = {2023-05-22T11:41:38.000+0200}, title = {Digital output flexible tilt sensor with conductive microspheres}, url = {https://ieeexplore.ieee.org/document/7370308/}, year = 2015 } - D. Karnaushenko, N. Münzenrieder, D. D. Karnaushenko, B. Koch, A. K. Meyer, S. Baunack, L. Petti, G. Tröster, D. Makarov, and O. G. Schmidt, "Biomimetic microelectronics for regenerative neuronal cuff implants," Advanced materials, vol. 27, iss. 43, p. 6797–6805, 2015.
[Bibtex]@article{Karnaushenko_2015, added-at = {2023-05-22T11:40:50.000+0200}, author = {Karnaushenko, Daniil and Münzenrieder, Niko and Karnaushenko, Dmitriy D. and Koch, Britta and Meyer, Anne K. and Baunack, Stefan and Petti, Luisa and Tröster, Gerhard and Makarov, Denys and Schmidt, Oliver G.}, biburl = {https://www.bibsonomy.org/bibtex/2db9707f00f237d9bf83740dac6f7fc9f/nikomu}, doi = {10.1002/adma.201503696}, interhash = {66ad0e5fa9af4db8fe31262b397ea1b5}, intrahash = {db9707f00f237d9bf83740dac6f7fc9f}, journal = {Advanced Materials}, keywords = {myown}, month = sep, number = 43, pages = {6797--6805}, publisher = {Wiley}, timestamp = {2023-05-22T11:40:50.000+0200}, title = {Biomimetic Microelectronics for Regenerative Neuronal Cuff Implants}, url = {https://doi.org/10.1002%2Fadma.201503696}, volume = 27, year = 2015 } - T. Meister, K. Ishida, R. Shabanpour, B. K. Boroujeni, C. Carta, F. Ellinger, N. Münzenrieder, L. Petti, G. A. Salvatore, G. Tröster, M. Wagner, P. Ghesquiere, S. Kiefl, and M. Krebs, "Bendable energy-harvesting module with organic photovoltaic, rechargeable battery, and a-igzo tft charging electronics," in 2015 european conference on circuit theory and design (ecctd), 2015, pp. 1-4.
[Bibtex]@inproceedings{7300095, abstract = {This work presents an innovative bendable module for solar-energy harvesting. The module consists of a mechanically flexible organic photovoltaic device (OPV), a rechargeable battery, and an a-IGZO TFT charge-control circuit. The total thickness of the module is 1.1 mm. We present measurements of hardware implementations and simulations. On this basis, voltage converter schemes based on a charge pump in the flexible a-IGZO TFT technology are explored, to enhance the range of operation of the module, particularly under low-light conditions. All investigations and data are presented with focus on two variants of the energy harvesting module that differ in nominal output voltage and capacity: a 6 V variant with capacity of 14.4 mAh and a 24 V variant with capacity of 5.5 mAh. Under exposure to 1 sun, both can be charged in less than 4 hours.}, added-at = {2023-05-22T11:40:32.000+0200}, author = {Meister, Tilo and Ishida, Koichi and Shabanpour, Reza and Boroujeni, Bahman K. and Carta, Corrado and Ellinger, Frank and Münzenrieder, Niko and Petti, Luisa and Salvatore, Giovanni A. and Tröster, Gerhard and Wagner, Michael and Ghesquiere, Pol and Kiefl, Stefan and Krebs, Martin}, biburl = {https://www.bibsonomy.org/bibtex/25e4c5a9909d504fff4b6450d9667596a/nikomu}, booktitle = {2015 European Conference on Circuit Theory and Design (ECCTD)}, doi = {10.1109/ECCTD.2015.7300095}, interhash = {e837041f8a6859d2357be1a046482f29}, intrahash = {5e4c5a9909d504fff4b6450d9667596a}, keywords = {myown}, month = aug, pages = {1-4}, timestamp = {2023-05-22T11:40:32.000+0200}, title = {Bendable energy-harvesting module with organic photovoltaic, rechargeable battery, and a-IGZO TFT charging electronics}, url = {https://ieeexplore.ieee.org/document/7300095/}, year = 2015 } - R. Shabanpour, C. Carta, K. Ishida, T. Meister, B. Kheradmand-Boroujeni, N. Münzenrieder, L. Petti, G. A. Salvatore, G. Tröster, and F. Ellinger, "Baseband amplifiers in a-igzo tft technology for flexible audio systems," in 2015 international symposium on intelligent signal processing and communication systems (ispacs), 2015, pp. 357-361.
[Bibtex]@inproceedings{7432796, abstract = {This work shows two baseband amplifiers, which are suitable for audio system applications. The amplifiers are implemented in a flexible a-IGZO thin-film transistor (TFT) technology. They should be capable of driving printed piezoelectric loudspeakers. One of these circuits is a two-stage cascode amplifier, which is operating at 6 V DC supply voltage (VDD). It has a voltage gain of 31 dB over a 3 dB bandwidth of 252 kHz with a DC power consumption as low as 1.5 mW. This amplifier is used as a pre-audio amplifier for driving the audio amplifier. The audio amplifier is a two-stage common-source (CS) circuit with a source-follower stage as a buffer, and is characterized with an 18 V VDD. The measured voltage gain of audio amplifier is 21.5 dB with a 3 dB bandwidth of 55 kHz from a DC power of 30 mW. The simulation of frequency responses of these circuits shows that the amplifiers can drive the loudspeakers with areas of 16 cm2 and 128 cm2. The load of this audio system is the model of printed loudspeaker with specific characterizations of manufacturer.}, added-at = {2023-05-22T11:39:21.000+0200}, author = {Shabanpour, R. and Carta, C. and Ishida, K. and Meister, T. and Kheradmand-Boroujeni, B. and Münzenrieder, N. and Petti, L. and Salvatore, G. A. and Tröster, G. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/26304ee867754d430213f0b6accc0c420/nikomu}, booktitle = {2015 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS)}, doi = {10.1109/ISPACS.2015.7432796}, interhash = {22fa4e4205999119cda2f8d82e93db59}, intrahash = {6304ee867754d430213f0b6accc0c420}, keywords = {myown}, month = nov, pages = {357-361}, timestamp = {2023-05-22T11:39:21.000+0200}, title = {Baseband amplifiers in a-IGZO TFT technology for flexible audio systems}, url = {https://ieeexplore.ieee.org/document/7432796/}, year = 2015 } - R. Shabanpour, C. Carta, T. Meister, K. Ishida, B. Kherdmand-Boroujeni, F. Ellinger, N. Münzenrieder, G. Salvatore, L. Petti, and G. Tröster, "A fully integrated audio amplifier in flexible a-igzo tft technology for printed piezoelectric loudspeakers," in 2015 european conference on circuit theory and design (ecctd), 2015, pp. 1-4.
[Bibtex]@inproceedings{7300067, abstract = {This paper presents the design, implementation and characterization of an integrated power efficient cascode amplifier in a flexible a-IGZO thin-film transistors (TFTs) with minimum channel lengths of 25 μm. The circuit consists of a two-stage cascode amplifier for the audio baseband amplification and a source-follower as a buffer to drive printed loudspeakers. The proposed amplifier is fabricated on a 50 μm-thick flexible polyimide foil, and characterized with a 20 V dc supply voltage (VDD) and an output load capacitance of 15 pF. The measured voltage gain exceeds 15 dB from 4.5 kHz to 15 dB at 25 kHz. The measured 3 dB bandwidth of the unloaded audio amplifier spans from 2.2 kHz to 60 kHz. The amplifier consumes a dc power of 40 mW and delivers 10 dBV of output signal at the 1 dB compression point; this is sufficient to drive printed piezoelectric loudspeakers. The simulated frequency response of the loaded amplifier shows that the amplifier can drive a wide range of capacitive loads from 15 pF to 500 nF. The simulated 3 dB bandwidth of the amplifier loaded with the printed loudspeaker is 29 kHz.}, added-at = {2023-05-22T11:38:34.000+0200}, author = {Shabanpour, R. and Carta, C. and Meister, T. and Ishida, K. and Kherdmand-Boroujeni, B. and Ellinger, F. and Münzenrieder, N. and Salvatore, G. and Petti, L. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2cdae0efcc5f3540fb4a629f7ef638516/nikomu}, booktitle = {2015 European Conference on Circuit Theory and Design (ECCTD)}, doi = {10.1109/ECCTD.2015.7300067}, interhash = {53be9c3ca0523bb6758a71c30ab2bbed}, intrahash = {cdae0efcc5f3540fb4a629f7ef638516}, keywords = {myown}, month = aug, pages = {1-4}, timestamp = {2023-05-22T11:38:34.000+0200}, title = {A fully integrated audio amplifier in flexible a-IGZO TFT technology for printed piezoelectric loudspeakers}, url = {https://ieeexplore.ieee.org/document/7300067/}, year = 2015 } - R. Shabanpour, K. Ishida, T. Meister, N. Munzenrieder, L. Petti, G. Salvatore, B. Kheradmand-Boroujeni, C. Carta, G. Troster, and F. Ellinger, "A 70° phase margin opamp with positive feedback in flexible a-igzo tft technology," in 2015 IEEE 58th international midwest symposium on circuits and systems (MWSCAS), 2015.
[Bibtex]@inproceedings{Shabanpour_2015, added-at = {2023-05-22T11:37:45.000+0200}, author = {Shabanpour, R. and Ishida, K. and Meister, T. and Munzenrieder, N. and Petti, L. and Salvatore, G. and Kheradmand-Boroujeni, B. and Carta, C. and Troster, G. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/22cbb38abaf28b06ab760039880d8d7d1/nikomu}, booktitle = {2015 {IEEE} 58th International Midwest Symposium on Circuits and Systems ({MWSCAS})}, doi = {10.1109/mwscas.2015.7282051}, interhash = {66d2034663a101d19ecb7c07336aa8c6}, intrahash = {2cbb38abaf28b06ab760039880d8d7d1}, keywords = {myown}, month = aug, publisher = {{IEEE}}, timestamp = {2023-05-22T11:37:45.000+0200}, title = {A 70° phase margin OPAMP with positive feedback in flexible a-IGZO TFT technology}, url = {https://doi.org/10.1109%2Fmwscas.2015.7282051}, year = 2015 } - K. Ishida, R. Shabanpour, T. Meister, B. K. Boroujeni, C. Carta, L. Petti, N. Munzenrieder, G. A. Salvatore, G. Troster, and F. Ellinger, "15 db conversion gain, 20 mhz carrier frequency am receiver in flexible a-igzo tft technology with textile antennas," in 2015 symposium on VLSI circuits (VLSI circuits), 2015.
[Bibtex]@inproceedings{Ishida_2015, added-at = {2023-05-22T11:35:48.000+0200}, author = {Ishida, K. and Shabanpour, R. and Meister, T. and Boroujeni, B. K. and Carta, C. and Petti, L. and Munzenrieder, N. and Salvatore, G. A. and Troster, G. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/265761f8d05e5938b9f230ed1af3df075/nikomu}, booktitle = {2015 Symposium on {VLSI} Circuits ({VLSI} Circuits)}, doi = {10.1109/vlsic.2015.7231376}, interhash = {5801ebbb3fe3424bdb595704619d132a}, intrahash = {65761f8d05e5938b9f230ed1af3df075}, keywords = {myown}, month = jun, publisher = {{IEEE}}, timestamp = {2023-05-22T11:35:48.000+0200}, title = {15 dB Conversion gain, 20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas}, url = {https://doi.org/10.1109%2Fvlsic.2015.7231376}, year = 2015 }
2014
- G. A. Salvatore, N. Münzenrieder, T. Kinkeldei, L. Petti, C. Zysset, I. Strebel, L. Büthe, and G. Tröster, "Wafer-scale design of lightweight and transparent electronics that wraps around hairs," Nature communications, vol. 5, iss. 1, 2014.
[Bibtex]@article{Salvatore_2014, added-at = {2023-05-22T11:34:15.000+0200}, author = {Salvatore, Giovanni A. and Münzenrieder, Niko and Kinkeldei, Thomas and Petti, Luisa and Zysset, Christoph and Strebel, Ivo and Büthe, Lars and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2cf7179065999acaf2d084315f02fa97c/nikomu}, doi = {10.1038/ncomms3982}, interhash = {5c11e5d997695926cc453898f0b71ecc}, intrahash = {cf7179065999acaf2d084315f02fa97c}, journal = {Nature Communications}, keywords = {myown}, month = jan, number = 1, publisher = {Springer Science and Business Media {LLC}}, timestamp = {2023-05-22T11:34:15.000+0200}, title = {Wafer-scale design of lightweight and transparent electronics that wraps around hairs}, url = {https://doi.org/10.1038%2Fncomms3982}, volume = 5, year = 2014 } - L. Petti, F. Bottacchi, N. Münzenrieder, H. Faber, G. Cantarella, C. Vogt, L. Büthe, I. Namal, F. Späth, T. Hertel, T. D. Anthopoulos, and G. Tröster, "Integration of solution-processed (7,5) swcnts with sputtered and spray-coated metal oxides for flexible complementary inverters," in 2014 ieee international electron devices meeting, 2014, p. 26.4.1-26.4.4.
[Bibtex]@inproceedings{7047113, abstract = {We report the integration of solution-processed high-purity semiconducting (7,5) single walled carbon nanotubes (SWCNTs) with metal oxides for the fabrication of high-performance CMOS inverters on free-standing plastic foils. Flexible inverters based on spin-coated SWCNTs and sputtered amorphous InGaZnO (IGZO) exhibit gains up to 85 V/V, even while bent to a tensile radius of 1 cm. To our knowledge, this is the highest gain ever reported for flexible and strained hybrid inverters, supplied at VDD≤10 V. We also realize flexible inverters based on fully solution-deposited SWCNTs and InOx semiconductors.}, added-at = {2023-05-22T11:33:22.000+0200}, author = {Petti, L. and Bottacchi, F. and Münzenrieder, N. and Faber, H. and Cantarella, G. and Vogt, C. and Büthe, L. and Namal, I. and Späth, F. and Hertel, T. and Anthopoulos, T. D. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2ee4a46035096753e66072dafff25ac69/nikomu}, booktitle = {2014 IEEE International Electron Devices Meeting}, doi = {10.1109/IEDM.2014.7047113}, interhash = {5f3c227491fb7c1ef9d9e586fc8cd6f7}, intrahash = {ee4a46035096753e66072dafff25ac69}, issn = {2156-017X}, keywords = {myown}, month = dec, pages = {26.4.1-26.4.4}, timestamp = {2023-05-22T11:33:22.000+0200}, title = {Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters}, url = {https://ieeexplore.ieee.org/document/7047113/}, year = 2014 } - L. Petti, N. Münzenrieder, G. A. Salvatore, C. Zysset, T. Kinkeldei, L. Büthe, and G. Tröster, "Influence of mechanical bending on flexible ingazno-based ferroelectric memory tfts," Ieee transactions on electron devices, vol. 61, iss. 4, pp. 1085-1092, 2014.
[Bibtex]@article{6774450, abstract = {Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. Here, we present mechanically flexible amorphous InGaZnO (a-IGZO) memory thin-film transistors (TFTs) with a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] gate insulator. Memory operation is demonstrated with a memory window of 3.2 V and a memory ON/OFF ratio of 1.5×106 (gate-source voltage sweep of ±6 V). The measured mobility of 8 cm2 V-1s-1 and the ON/OFF current ratio of 107 are comparable with the values for reference TFTs fabricated on the same substrate. To use memory TFTs in flexible applications, it is crucial to understand their behavior under mechanical strain. Flexible memory and reference TFTs are characterized under bending radii down to 5.5 mm, corresponding to tensile and compressive strain of ≈ ±0.6%. For both memory and reference TFTs, tensile strain causes negative threshold voltage shifts and increased drain currents, whereas compressive strain results in the opposite effects. However, memory TFTs, compared with reference TFTs, exhibit up to 8× larger threshold voltage shifts and 17× larger drain current variations. It is shown that the strain-dependent properties of a-IGZO can only explain the shifts observed in reference TFTs, whereas the variations in memory TFTs are mainly caused by the piezoelectric properties of P(VDF-TrFE).}, added-at = {2023-05-22T11:32:26.000+0200}, author = {Petti, Luisa and Münzenrieder, Niko and Salvatore, Giovanni A. and Zysset, Christoph and Kinkeldei, Thomas and Büthe, Lars and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2c38790d04c9f252d07e8ddc990f6e075/nikomu}, doi = {10.1109/TED.2014.2304307}, interhash = {497a2f713f377d05fb215d2dd61649bb}, intrahash = {c38790d04c9f252d07e8ddc990f6e075}, issn = {1557-9646}, journal = {IEEE Transactions on Electron Devices}, keywords = {myown}, month = {April}, number = 4, pages = {1085-1092}, timestamp = {2023-05-22T11:32:26.000+0200}, title = {Influence of Mechanical Bending on Flexible InGaZnO-Based Ferroelectric Memory TFTs}, url = {https://ieeexplore.ieee.org/document/6774450/}, volume = 61, year = 2014 } - G. A. Salvatore, N. Münzenrieder, C. Zysset, T. Kinkeldei, L. Petti, and G. Tröster, "High performance flexible electronics for biomedical devices," in 2014 36th annual international conference of the ieee engineering in medicine and biology society, 2014, pp. 4176-4179.
[Bibtex]@inproceedings{6944544, abstract = {Plastic electronics is soft, deformable and lightweight and it is suitable for the realization of devices which can form an intimate interface with the body, be implanted or integrated into textile for wearable and biomedical applications. Here, we present flexible electronics based on amorphous oxide semiconductors (a-IGZO) whose performance can achieve MHz frequency even when bent around hair. We developed an assembly technique to integrate complex electronic functionalities into textile while preserving the softness of the garment. All this and further developments can open up new opportunities in health monitoring, biotechnology and telemedicine.}, added-at = {2023-05-22T11:31:32.000+0200}, author = {Salvatore, Giovanni A. and Münzenrieder, Niko and Zysset, Christoph and Kinkeldei, Thomas and Petti, Luisa and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2719fbcdcb462c6c3a4e27480e174fefd/nikomu}, booktitle = {2014 36th Annual International Conference of the IEEE Engineering in Medicine and Biology Society}, doi = {10.1109/EMBC.2014.6944544}, interhash = {de6fbfc7f1da2dd5f5a15a6aa31ce877}, intrahash = {719fbcdcb462c6c3a4e27480e174fefd}, issn = {1558-4615}, keywords = {myown}, month = aug, pages = {4176-4179}, timestamp = {2023-05-22T11:31:32.000+0200}, title = {High performance flexible electronics for biomedical devices}, url = {https://ieeexplore.ieee.org/document/6944544/}, year = 2014 } - R. Shabanpour, T. Meister, K. Ishida, L. Petti, N. Münzenrieder, G. A. Salvatore, B. K. Boroujeni, C. Carta, G. Tröster, and F. Ellinger, "High gain amplifiers in flexible self-aligned a-igzo thin-film-transistor technology," in 2014 21st ieee international conference on electronics, circuits and systems (icecs), 2014, pp. 108-111.
[Bibtex]@inproceedings{7049933, abstract = {To our knowledge, this paper presents the first high-gain amplifiers fabricated in flexible self-aligned amorphous indium gallium zinc oxide (a-IGZO) thin-film-transistor (TFT) technology. For the common source amplifier applying positive feedback a voltage gain of 17 dB, a bandwidth of 79 kHz and a DC power of only 0.76 mW were measured. For the cascode amplifier a voltage gain of 25 dB voltage gain, a bandwidth of 220 kHz and a DC power of 2.32 mW were measured. The simulations based on a RPI-aTFT model are compared with measurements. The chip areas are 8 and 10 mm2, respectively.}, added-at = {2023-05-22T11:30:15.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Petti, L. and Münzenrieder, N. and Salvatore, G.A. and Boroujeni, B. K. and Carta, C. and Tröster, G. and Ellinger, F.}, biburl = {https://www.bibsonomy.org/bibtex/254f2874f366bde03c167853c58ada621/nikomu}, booktitle = {2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS)}, doi = {10.1109/ICECS.2014.7049933}, interhash = {00302c1175e508b04f38fdaa4dffe1d2}, intrahash = {54f2874f366bde03c167853c58ada621}, keywords = {myown}, month = dec, pages = {108-111}, timestamp = {2023-05-22T11:30:15.000+0200}, title = {High gain amplifiers in flexible self-aligned a-IGZO thin-film-transistor technology}, url = {https://ieeexplore.ieee.org/document/7049933/}, year = 2014 } - N. Munzenrieder, P. Voser, L. Petti, C. Zysset, L. Buthe, C. Vogt, G. A. Salvatore, and G. Troster, "Flexible self-aligned double-gate IGZO TFT," IEEE electron device letters, vol. 35, iss. 1, p. 69–71, 2014.
[Bibtex]@article{Munzenrieder_2014, added-at = {2023-05-22T11:28:15.000+0200}, author = {Munzenrieder, Niko and Voser, Pascal and Petti, Luisa and Zysset, Christoph and Buthe, Lars and Vogt, Christian and Salvatore, Giovanni A. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/27d056fa3e0f6835c7de41b79426632f9/nikomu}, doi = {10.1109/led.2013.2286319}, interhash = {26a3b665f8091f79bb26fb1ba72f8dd3}, intrahash = {7d056fa3e0f6835c7de41b79426632f9}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = jan, number = 1, pages = {69--71}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T11:28:15.000+0200}, title = {Flexible Self-Aligned Double-Gate {IGZO} {TFT}}, url = {https://doi.org/10.1109%2Fled.2013.2286319}, volume = 35, year = 2014 } - L. Petti, N. Munzenrieder, G. A. Salvatore, C. Zysset, T. Kinkeldei, L. Buthe, C. Vogt, and G. Troster, "Flexible electronics based on oxide semiconductors," in 2014 21st international workshop on active-matrix flatpanel displays and devices (AM-FPD), 2014.
[Bibtex]@inproceedings{Petti_2014, added-at = {2023-05-22T11:27:25.000+0200}, author = {Petti, Luisa and Munzenrieder, Niko and Salvatore, Giovanni Antonio and Zysset, Christoph and Kinkeldei, Thomas and Buthe, Lars and Vogt, Christian and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/26fc1905a67df7bae8d92d7e5c0d319f0/nikomu}, booktitle = {2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices ({AM}-{FPD})}, doi = {10.1109/am-fpd.2014.6867209}, interhash = {31237837bd28811d6dcff48043f3e19d}, intrahash = {6fc1905a67df7bae8d92d7e5c0d319f0}, keywords = {myown}, month = jul, publisher = {{IEEE}}, timestamp = {2023-05-22T11:27:25.000+0200}, title = {Flexible electronics based on oxide semiconductors}, url = {https://doi.org/10.1109%2Fam-fpd.2014.6867209}, year = 2014 } - N. Münzenrieder, G. A. Salvatore, L. Petti, C. Zysset, L. Büthe, C. Vogt, G. Cantarella, and G. Tröster, "Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100MHz operation," Applied physics letters, vol. 105, iss. 26, p. 263504, 2014.
[Bibtex]@article{M_nzenrieder_2014, added-at = {2023-05-22T11:26:23.000+0200}, author = {Münzenrieder, Niko and Salvatore, Giovanni A. and Petti, Luisa and Zysset, Christoph and Büthe, Lars and Vogt, Christian and Cantarella, Giuseppe and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/23d9f3fa26e80e60ace009d1675db37b5/nikomu}, description = {Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation | Applied Physics Letters | AIP Publishing}, doi = {10.1063/1.4905015}, interhash = {28cf4057de0d38ba8d3c32716ca5765b}, intrahash = {3d9f3fa26e80e60ace009d1675db37b5}, journal = {Applied Physics Letters}, keywords = {myown}, month = dec, number = 26, pages = 263504, publisher = {{AIP} Publishing}, timestamp = {2023-05-24T22:05:50.000+0200}, title = {Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100{MHz} operation}, url = {https://doi.org/10.1063%2F1.4905015}, volume = 105, year = 2014 } - R. Shabanpour, T. Meister, K. Ishida, K. B. Boroujeni, C. Carta, U. Jorges, F. Ellinger, L. Petti, N. Munzenrieder, G. A. Salvatore, and G. Troster, "Cherry-hooper amplifiers with 33 dB gain at 400 kHz BW and 10 dB gain at 3.5 MHz BW in flexible self-aligned a-IGZO TFT technology," in 2014 international symposium on intelligent signal processing and communication systems (ISPACS), 2014.
[Bibtex]@inproceedings{Shabanpour_2014, added-at = {2023-05-22T11:25:48.000+0200}, author = {Shabanpour, R. and Meister, T. and Ishida, K. and Boroujeni, B. Kheradmand and Carta, C. and Jorges, U. and Ellinger, F. and Petti, L. and Munzenrieder, N. and Salvatore, G.A. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2d69f77d1261cc88b2f71372e782de6fd/nikomu}, booktitle = {2014 International Symposium on Intelligent Signal Processing and Communication Systems ({ISPACS})}, doi = {10.1109/ispacs.2014.7024466}, interhash = {8bdbea81a98c65a05f4b7847ae08d907}, intrahash = {d69f77d1261cc88b2f71372e782de6fd}, keywords = {myown}, month = dec, publisher = {{IEEE}}, timestamp = {2023-05-22T11:25:48.000+0200}, title = {Cherry-Hooper amplifiers with 33 {dB} gain at 400 {kHz} {BW} and 10 {dB} gain at 3.5 {MHz} {BW} in flexible self-aligned a-{IGZO} {TFT} technology}, url = {https://doi.org/10.1109%2Fispacs.2014.7024466}, year = 2014 } - L. Buethe, C. Vogt, L. Petti, N. Muenzenrieder, C. Zysset, G. Salvatore, and G. Troester, "A mechanically flexible tilt switch on kapton foil with microspheres as a pendulum," in Sensors and measuring systems 2014; 17. itg/gma symposium, 2014, pp. 1-4.
[Bibtex]@inproceedings{buethe2014mechanically, added-at = {2023-05-22T11:24:54.000+0200}, author = {Buethe, Lars and Vogt, Christian and Petti, Luisa and Muenzenrieder, Niko and Zysset, Christoph and Salvatore, Giovanni and Troester, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2d7f9b4adb97e8ecf476f8b5fbc725cd1/nikomu}, booktitle = {Sensors and Measuring Systems 2014; 17. ITG/GMA Symposium}, doi = {https://ieeexplore.ieee.org/abstract/document/6856657}, interhash = {839e05082f35894d6f5fd6fd58de5df2}, intrahash = {d7f9b4adb97e8ecf476f8b5fbc725cd1}, isbn = {978-3-8007-3622-5}, keywords = {myown}, pages = {1-4}, publisher = {VDE VERLAG GMBH}, timestamp = {2023-05-24T22:05:26.000+0200}, title = {A Mechanically Flexible Tilt Switch On Kapton Foil With Microspheres As A Pendulum}, url = {https://ieeexplore.ieee.org/abstract/document/6856657}, year = 2014 } - K. Ishida, R. Shabanpour, B. K. Boroujeni, T. Meister, C. Carta, F. Ellinger, L. Petti, N. S. Munzenrieder, G. A. Salvatore, and G. Troster, "22.5 db open-loop gain, 31 khz gbw pseudo-cmos based operational amplifier with a-igzo tfts on a flexible film," in 2014 IEEE asian solid-state circuits conference (a-SSCC), 2014.
[Bibtex]@inproceedings{Ishida_2014, added-at = {2023-05-22T11:19:04.000+0200}, author = {Ishida, Koich and Shabanpour, Reza and Boroujeni, Bahman K. and Meister, Tilo and Carta, Corrado and Ellinger, Frank. and Petti, Luisa and Munzenrieder, Niko S. and Salvatore, Giovanni A. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2084e915553a0666a32edb17eccb7c2a9/nikomu}, booktitle = {2014 {IEEE} Asian Solid-State Circuits Conference (A-{SSCC})}, doi = {10.1109/asscc.2014.7008923}, interhash = {22ed3957f72af19339ad93480d3572a8}, intrahash = {084e915553a0666a32edb17eccb7c2a9}, keywords = {myown}, month = nov, publisher = {{IEEE}}, timestamp = {2023-05-22T11:19:04.000+0200}, title = {22.5 dB open-loop gain, 31 kHz GBW pseudo-CMOS based operational amplifier with a-IGZO TFTs on a flexible film}, url = {https://doi.org/10.1109%2Fasscc.2014.7008923}, year = 2014 }
2013
- C. Zysset, N. Nasseri, L. Büthe, N. Münzenrieder, T. Kinkeldei, L. Petti, S. Kleiser, G. A. Salvatore, M. Wolf, and G. Tröster, "Textile integrated sensors and actuators for near-infrared spectroscopy," Optics express, vol. 21, iss. 3, p. 3213, 2013.
[Bibtex]@article{Zysset_2013, added-at = {2023-05-22T11:16:12.000+0200}, author = {Zysset, Christoph and Nasseri, Nassim and Büthe, Lars and Münzenrieder, Niko and Kinkeldei, Thomas and Petti, Luisa and Kleiser, Stefan and Salvatore, Giovanni A. and Wolf, Martin and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/236e08cb457e40289a6b808142619dd86/nikomu}, doi = {10.1364/oe.21.003213}, interhash = {146107451b8ef284158132fa80d6a599}, intrahash = {36e08cb457e40289a6b808142619dd86}, journal = {Optics Express}, keywords = {myown}, month = feb, number = 3, pages = 3213, publisher = {The Optical Society}, timestamp = {2023-05-22T11:16:12.000+0200}, title = {Textile integrated sensors and actuators for near-infrared spectroscopy}, url = {https://doi.org/10.1364%2Foe.21.003213}, volume = 21, year = 2013 } - N. Münzenrieder, C. Zysset, L. Petti, T. Kinkeldei, G. A. Salvatore, and G. Tröster, "Room temperature fabricated flexible nio/igzo pn diode under mechanical strain," Solid-state electronics, vol. 87, pp. 17-20, 2013.
[Bibtex]@article{MUNZENRIEDER201317, abstract = {Flexible electronic devices fabricated on plastic substrates require semiconductors, which can be deposited at low temperatures. While Indium–Gallium–Zinc-Oxide (IGZO) is a promising n-type oxide semiconductor, a p-type oxide semiconductor with similar performance is currently not available. Here, the room temperature deposition of nickel oxide (NiO) acting as a p-type oxide semiconductor on a flexible plastic foil is described. NiO exhibits a carrier density of+1.6×1017cm−3 and a Hall mobility of 0.45cm2/Vs. p-type NiO is combined with n-type IGZO to fabricate flexible pn diodes on a free-standing polyimide substrate. The diodes show an ideality factor of ≈3.2 and an on–off current-ratio of ≈104. The NiO/IGZO diodes stay fully operational when exposed to tensile or compressive mechanical strain of 0.25%, induced by bending to a radius of 10mm. In addition, a 50Hz AC signal was rectified using a flexible diode while flat and bent.}, added-at = {2023-05-22T11:14:13.000+0200}, author = {Münzenrieder, Niko and Zysset, Christoph and Petti, Luisa and Kinkeldei, Thomas and Salvatore, Giovanni A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2f66fd37d1ec1664a79e9ff528e10a584/nikomu}, description = {Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain - ScienceDirect}, doi = {https://doi.org/10.1016/j.sse.2013.04.030}, interhash = {d1df66705e0dc5d53b4ae34ba3ff250c}, intrahash = {f66fd37d1ec1664a79e9ff528e10a584}, issn = {0038-1101}, journal = {Solid-State Electronics}, keywords = {myown}, pages = {17-20}, timestamp = {2023-05-22T11:14:13.000+0200}, title = {Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain}, url = {https://www.sciencedirect.com/science/article/pii/S0038110113002001}, volume = 87, year = 2013 } - L. Petti, P. Aguirre, N. Munzenrieder, G. A. Salvatore, C. Zysset, A. Frutiger, L. Buthe, C. Vogt, and G. Troster, "Mechanically flexible vertically integrated a-igzo thin-film transistors with 500 nm channel length fabricated on free standing plastic foil," in 2013 IEEE international electron devices meeting, 2013.
[Bibtex]@inproceedings{Petti_2013, added-at = {2023-05-22T11:13:50.000+0200}, author = {Petti, L. and Aguirre, P. and Munzenrieder, N. and Salvatore, G. A. and Zysset, C. and Frutiger, A. and Buthe, L. and Vogt, C. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/22df63de92e60ef976a9b7f47ad31da6a/nikomu}, booktitle = {2013 {IEEE} International Electron Devices Meeting}, doi = {10.1109/iedm.2013.6724609}, interhash = {24e1200b57c596d37f3e276184b5235a}, intrahash = {2df63de92e60ef976a9b7f47ad31da6a}, keywords = {myown}, month = dec, publisher = {{IEEE}}, timestamp = {2023-05-22T11:13:50.000+0200}, title = {Mechanically flexible vertically integrated a-IGZO thin-film transistors with 500 nm channel length fabricated on free standing plastic foil}, url = {https://doi.org/10.1109%2Fiedm.2013.6724609}, year = 2013 } - N. Munzenrieder, L. Petti, C. Zysset, D. Gork, L. Buthe, G. A. Salvatore, and G. Troster, "Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm," in 2013 proceedings of the european solid-state device research conference (ESSDERC), 2013.
[Bibtex]@inproceedings{Munzenrieder_2013, added-at = {2023-05-22T11:12:43.000+0200}, author = {Munzenrieder, Niko and Petti, Luisa and Zysset, Christoph and Gork, Deniz and Buthe, Lars and Salvatore, Giovanni A. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/27200232bce42c5a902d411a5d760dd7f/nikomu}, booktitle = {2013 Proceedings of the European Solid-State Device Research Conference ({ESSDERC})}, doi = {10.1109/essderc.2013.6818893}, interhash = {aa22cd831e3690a498eab91a6f0fed1b}, intrahash = {7200232bce42c5a902d411a5d760dd7f}, keywords = {myown}, month = sep, publisher = {{IEEE}}, timestamp = {2023-05-22T11:12:43.000+0200}, title = {Investigation of gate material ductility enables flexible a-{IGZO} {TFTs} bendable to a radius of 1.7 mm}, url = {https://doi.org/10.1109%2Fessderc.2013.6818893}, year = 2013 } - N. Munzenrieder, G. A. Salvatore, T. Kinkeldei, L. Petti, C. Zysset, L. Buthe, and G. Troster, "Ingazno tfts on a flexible membrane transferred to a curved surface with a radius of 2 mm," in 71st device research conference, 2013.
[Bibtex]@inproceedings{Munzenrieder_2013, added-at = {2023-05-22T11:11:31.000+0200}, author = {Munzenrieder, N. and Salvatore, G. A. and Kinkeldei, T. and Petti, L. and Zysset, C. and Buthe, L. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/225f55e675cded3ea42465faf01fac034/nikomu}, booktitle = {71st Device Research Conference}, doi = {10.1109/drc.2013.6633845}, interhash = {547e377dd3e62116ec6813cba7e94c85}, intrahash = {25f55e675cded3ea42465faf01fac034}, keywords = {myown}, month = jun, publisher = {{IEEE}}, timestamp = {2023-05-22T11:11:31.000+0200}, title = {InGaZnO TFTs on a flexible membrane transferred to a curved surface with a radius of 2 mm}, url = {https://doi.org/10.1109%2Fdrc.2013.6633845}, year = 2013 } - C. Zysset, N. Munzenrieder, L. Petti, L. Buthe, G. A. Salvatore, and G. Troster, "Igzo tft-based all-enhancement operational amplifier bent to a radius of 5 mm," IEEE electron device letters, vol. 34, iss. 11, p. 1394–1396, 2013.
[Bibtex]@article{Zysset_2013, added-at = {2023-05-22T11:10:24.000+0200}, author = {Zysset, Christoph and Munzenrieder, Niko and Petti, Luisa and Buthe, Lars and Salvatore, Giovanni A. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/205c7eed8b115cd751b573b5bf4fe355f/nikomu}, doi = {10.1109/led.2013.2280024}, interhash = {7569e088e5931a84ec7b4da6ea11fb3d}, intrahash = {05c7eed8b115cd751b573b5bf4fe355f}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = nov, number = 11, pages = {1394--1396}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T11:10:24.000+0200}, title = {IGZO TFT-Based All-Enhancement Operational Amplifier Bent to a Radius of 5 mm}, url = {https://doi.org/10.1109%2Fled.2013.2280024}, volume = 34, year = 2013 } - N. Munzenrieder, L. Petti, C. Zysset, T. Kinkeldei, G. A. Salvatore, and G. Troster, "Flexible self-aligned amorphous ingazno thin-film transistors with submicrometer channel length and a transit frequency of 135 mhz," IEEE transactions on electron devices, vol. 60, iss. 9, p. 2815–2820, 2013.
[Bibtex]@article{Munzenrieder_2013, added-at = {2023-05-22T11:08:29.000+0200}, author = {Munzenrieder, Niko and Petti, Luisa and Zysset, Christoph and Kinkeldei, Thomas and Salvatore, Giovanni Antonio and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/22f61b5d2d7175e675ccbae0331e39e25/nikomu}, doi = {10.1109/ted.2013.2274575}, interhash = {8301f644d57b7c466deab6744ea2acfb}, intrahash = {2f61b5d2d7175e675ccbae0331e39e25}, journal = {{IEEE} Transactions on Electron Devices}, keywords = {myown}, month = sep, number = 9, pages = {2815--2820}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T11:08:29.000+0200}, title = {Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz}, url = {https://doi.org/10.1109%2Fted.2013.2274575}, volume = 60, year = 2013 } - N. Münzenrieder, C. Zysset, L. Petti, T. Kinkeldei, G. A. Salvatore, and G. Tröster, "Flexible double gate a-igzo tft fabricated on free standing polyimide foil," Solid-state electronics, vol. 84, pp. 198-204, 2013.
[Bibtex]@article{MUNZENRIEDER2013198, abstract = {In this paper, the concept of double gate transistors is applied to mechanically flexible amorphous indium–gallium–zinc-oxide (a-IGZO) thin film transistors (TFTs) fabricated on free standing plastic foil. Due to the temperature sensitivity of the plastic substrate, a-IGZO is a suitable semiconductor because it provides carrier mobilities around 10cm2/Vs when deposited at room temperature. Double gate TFTs with connected bottom and top gate are compared to bottom gate reference TFTs fabricated on the same substrate. Double gate a-IGZO TFTs exhibit a by 78% increased gate capacitance, a by 700mV higher threshold voltage, and therefore an up to 92% increased transconductance when characterized at the same gate voltage above threshold (over-bias voltage). The subthreshold swing and the on/off current ratios are improved as well, and reach excellent values of 69mV/dec and 2×109, respectively. The mechanical flexibility of double gate TFTs compared to bottom gate TTFs is investigated, and device operation is shown while the double gate TFT is exposed to tensile strain of 0.55%, induced by bending to a radius of 5mm.}, added-at = {2023-05-22T11:07:22.000+0200}, author = {Münzenrieder, Niko and Zysset, Christoph and Petti, Luisa and Kinkeldei, Thomas and Salvatore, Giovanni A. and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/237cb78f41f3b5d8e5cd564b47681878f/nikomu}, description = {Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil - ScienceDirect}, doi = {https://doi.org/10.1016/j.sse.2013.02.025}, interhash = {932f00a0b128982347a029694444ee8e}, intrahash = {37cb78f41f3b5d8e5cd564b47681878f}, issn = {0038-1101}, journal = {Solid-State Electronics}, keywords = {myown}, note = {Selected Papers from the ESSDERC 2012 Conference}, pages = {198-204}, timestamp = {2023-05-22T11:07:22.000+0200}, title = {Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil}, url = {https://www.sciencedirect.com/science/article/pii/S0038110113000865}, volume = 84, year = 2013 } - G. A. Salvatore, N. Münzenrieder, C. Barraud, L. Petti, C. Zysset, L. Büthe, K. Ensslin, and G. Tröster, "Fabrication and transfer of flexible few-layers mos2thin film transistors to any arbitrary substrate," ACS nano, vol. 7, iss. 10, p. 8809–8815, 2013.
[Bibtex]@article{Salvatore_2013, added-at = {2023-05-22T11:07:01.000+0200}, author = {Salvatore, Giovanni A. and Münzenrieder, Niko and Barraud, Cl{\'{e}}ment and Petti, Luisa and Zysset, Christoph and Büthe, Lars and Ensslin, Klaus and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2f2b82602690dd3b361c84c2a4caa0821/nikomu}, doi = {10.1021/nn403248y}, interhash = {9fb308358a7619f21f7bd0143636a5af}, intrahash = {f2b82602690dd3b361c84c2a4caa0821}, journal = {{ACS} Nano}, keywords = {myown}, month = sep, number = 10, pages = {8809--8815}, publisher = {American Chemical Society ({ACS})}, timestamp = {2023-05-22T11:07:01.000+0200}, title = {Fabrication and Transfer of Flexible Few-Layers MoS2Thin Film Transistors to Any Arbitrary Substrate}, url = {https://doi.org/10.1021%2Fnn403248y}, volume = 7, year = 2013 } - C. Perumal, K. Ishida, R. Shabanpour, B. K. Boroujeni, L. Petti, N. S. Munzenrieder, G. A. Salvatore, C. Carta, G. Troster, and F. Ellinger, "A compact a-IGZO TFT model based on mosfet spice level=3 template for analog/rf circuit designs," IEEE electron device letters, vol. 34, iss. 11, p. 1391–1393, 2013.
[Bibtex]@article{Perumal_2013, added-at = {2023-05-22T11:05:14.000+0200}, author = {Perumal, Charles and Ishida, Koichi and Shabanpour, Reza and Boroujeni, Bahman Kheradmand and Petti, Luisa and Munzenrieder, Niko S. and Salvatore, Giovanni Antonio and Carta, Corrado and Troster, Gerhard and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/248f14301f1d7b8d2f8a16f38f5b79496/nikomu}, doi = {10.1109/led.2013.2279940}, interhash = {4807fc3244475269aa0116972bded3c8}, intrahash = {48f14301f1d7b8d2f8a16f38f5b79496}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = nov, number = 11, pages = {1391--1393}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T11:05:14.000+0200}, title = {A Compact a-{IGZO} {TFT} Model Based on MOSFET SPICE Level=3 Template for Analog/RF Circuit Designs}, url = {https://doi.org/10.1109%2Fled.2013.2279940}, volume = 34, year = 2013 } - R. Shabanpour, K. Ishida, C. Perumal, B. K. Boroujeni, T. Meister, C. Carta, F. Ellinger, L. Petti, N. Munzenrieder, G. A. Salvatore, and G. Troster, "A 2.62 mhz 762 uw cascode amplifier in flexible a-igzo thin-film technology for textile and wearable-electronics applications," in 2013 international semiconductor conference dresden - grenoble (ISCDG), 2013.
[Bibtex]@inproceedings{Shabanpour_2013, added-at = {2023-05-22T11:02:03.000+0200}, author = {Shabanpour, R. and Ishida, K. and Perumal, C. and Boroujeni, B. K. and Meister, T. and Carta, C. and Ellinger, F. and Petti, L. and Munzenrieder, N. and Salvatore, G.A. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/21fe6257c53156428fe7db8d5c561a4fc/nikomu}, booktitle = {2013 International Semiconductor Conference Dresden - Grenoble ({ISCDG})}, doi = {10.1109/iscdg.2013.6656321}, interhash = {1822c0ecb932f44b8a7908e64d5d08f6}, intrahash = {1fe6257c53156428fe7db8d5c561a4fc}, keywords = {myown}, month = sep, publisher = {{IEEE}}, timestamp = {2023-05-22T11:02:50.000+0200}, title = {A 2.62 MHz 762 uW cascode amplifier in flexible a-IGZO thin-film technology for textile and wearable-electronics applications}, url = {https://doi.org/10.1109%2Fiscdg.2013.6656321}, year = 2013 } - T. Kinkeldei, C. Denier, C. Zysset, N. Muenzenrieder, and G. Troester, "2d thin film temperature sensors fabricated onto 3d nylon yarn surface for smart textile applications," Research journal of textile and apparel, vol. 17, iss. 2, p. 16–20, 2013.
[Bibtex]@article{Kinkeldei_2013, added-at = {2023-05-22T11:00:23.000+0200}, author = {Kinkeldei, Thomas and Denier, Claude and Zysset, Christoph and Muenzenrieder, Niko and Troester, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2c57b3862dac2781a7904b1284040bdcf/nikomu}, doi = {10.1108/rjta-17-02-2013-b003}, interhash = {f5a39b13fc9469fb6a5fb881e5e67348}, intrahash = {c57b3862dac2781a7904b1284040bdcf}, journal = {Research Journal of Textile and Apparel}, keywords = {myown}, month = may, number = 2, pages = {16--20}, publisher = {Emerald}, timestamp = {2023-05-22T11:00:23.000+0200}, title = {2D Thin Film Temperature Sensors Fabricated onto 3D Nylon Yarn Surface for Smart Textile Applications}, url = {https://doi.org/10.1108%2Frjta-17-02-2013-b003}, volume = 17, year = 2013 } - C. Zysset, T. Kinkeldei, N. Münzenrieder, G. Tröster, and K. Cherenack, "Fabrication technologies for the integration of thin-film electronics into smart textiles," in Multidisciplinary know-how for smart-textiles developers, T. Kirstein, Ed., Woodhead publishing, 2013, pp. 227-252.
[Bibtex]@incollection{ZYSSET2013227, abstract = {Abstract: Smart textiles are a key component for sensing physiological parameters close to the human body, supporting and assisting people in daily living. In addition, smart textiles offer potential in technical textiles: they comprise car and airplane interiors where lighting and emergency signaling are potential applications, in bandages for wound monitoring or automatically adjusting furniture in homes. The chapter starts with an introduction outlining the state-of-the-art smart-textile production. Then the processes for the fabrication of electronics on flexible plastic stripes, mechanical requirements due to the integration into woven textiles and the integration method of the flexible stripes into woven textiles are described. The feasibility of the technology is demonstrated with three prototypes: one prototype measures humidity and temperature, the second one has an integrated bus system and the last one is a textile integrated active matrix with light emitting diodes. At the end of the chapter, potentials of the technology are described to overcome issues related to smart textiles production, such as user acceptance, washability or large-scale production.}, added-at = {2023-05-22T10:59:12.000+0200}, author = {Zysset, C. and Kinkeldei, T. and Münzenrieder, N. and Tröster, G. and Cherenack, K.}, biburl = {https://www.bibsonomy.org/bibtex/209137931589a9496c567de3394c19986/nikomu}, booktitle = {Multidisciplinary Know-How for Smart-Textiles Developers}, description = {Fabrication technologies for the integration of thin-film electronics into smart textiles - ScienceDirect}, doi = {https://doi.org/10.1533/9780857093530.2.227}, editor = {Kirstein, Tünde}, interhash = {41b23633815033a74876635b75d1e30e}, intrahash = {09137931589a9496c567de3394c19986}, isbn = {978-0-85709-342-4}, keywords = {myown}, pages = {227-252}, publisher = {Woodhead Publishing}, series = {Woodhead Publishing Series in Textiles}, timestamp = {2023-05-22T11:00:06.000+0200}, title = {Fabrication technologies for the integration of thin-film electronics into smart textiles}, url = {https://www.sciencedirect.com/science/article/pii/B9780857093424500080}, year = 2013 } - C. Carta, K. Ishida, B. K. Boroujeni, R. Shabanpour, T. Meister, G. Schmidt, E. Suomalainen, A. Brandlmaier, G. A. Salvatore, N. Munzenrieder, L. Petti, G. Troster, D. Petrantonakis, D. Kozakis, R. Paradiso, M. Krebs, M. Tuomikoski, H. Egelhaaf, and F. Ellinger, "Overview of the EC project FLEXIBILITY: organic and thin-film ICs up to radio frequencies for multifunctional flexible systems," in 2013 SBMO/IEEE MTT-s international microwave & optoelectronics conference (IMOC), 2013.
[Bibtex]@inproceedings{Carta_2013, added-at = {2023-05-22T10:58:46.000+0200}, author = {Carta, Corrado and Ishida, Koichi and Boroujeni, Bahman K. and Shabanpour, Reza and Meister, Tilo and Schmidt, Georg and Suomalainen, Eero and Brandlmaier, Andreas and Salvatore, Giovanni A. and Munzenrieder, Niko and Petti, Luisa and Troster, Gerhard and Petrantonakis, Dimitris and Kozakis, Dionyssis and Paradiso, Rita and Krebs, Martin and Tuomikoski, Markus and Egelhaaf, Hans-Joachim and Ellinger, Frank}, biburl = {https://www.bibsonomy.org/bibtex/2e3fa043b224e2ebcb11af3a28f8a9b51/nikomu}, booktitle = {2013 {SBMO}/{IEEE} {MTT}-S International Microwave & Optoelectronics Conference ({IMOC})}, doi = {10.1109/imoc.2013.6646609}, interhash = {902c03bcab15b8f9d889f019497dc94e}, intrahash = {e3fa043b224e2ebcb11af3a28f8a9b51}, keywords = {myown}, month = aug, publisher = {{IEEE}}, timestamp = {2023-05-24T22:03:39.000+0200}, title = {Overview of the {EC} project {FLEXIBILITY}: Organic and thin-film {ICs} up to radio frequencies for multifunctional flexible systems}, url = {https://doi.org/10.1109%2Fimoc.2013.6646609}, year = 2013 }
2012
- T. Kinkeldei, C. Zysset, N. Münzenrieder, and G. Tröster, "The influence of bending on the performance of flexible carbon black/polymer composite gas sensors," Journal of polymer science part b: polymer physics, vol. 51, iss. 5, p. 329–336, 2012.
[Bibtex]@article{Kinkeldei_2012, added-at = {2023-05-22T11:17:02.000+0200}, author = {Kinkeldei, Thomas and Zysset, Christoph and Münzenrieder, Niko and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2ce577b2751349fc705095426df37e873/nikomu}, doi = {10.1002/polb.23219}, interhash = {3b56688ea99d8c7482eaac5533f1dba1}, intrahash = {ce577b2751349fc705095426df37e873}, journal = {Journal of Polymer Science Part B: Polymer Physics}, keywords = {myown}, month = dec, number = 5, pages = {329--336}, publisher = {Wiley}, timestamp = {2023-05-22T11:17:02.000+0200}, title = {The influence of bending on the performance of flexible carbon black/polymer composite gas sensors}, url = {https://doi.org/10.1002%2Fpolb.23219}, volume = 51, year = 2012 } - C. Zysset, T. Kinkeldei, N. Münzenrieder, L. Petti, G. Salvatore, and G. Tröster, "Combining electronics on flexible plastic strips with textiles," Textile research journal, vol. 83, iss. 11, p. 1130–1142, 2012.
[Bibtex]@article{Zysset_2012, added-at = {2023-05-22T11:05:59.000+0200}, author = {Zysset, Christoph and Kinkeldei, Thomas and Münzenrieder, Niko and Petti, Luisa and Salvatore, Giovanni and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2bfc3ff3745fb86555ca39be9a8aa5a50/nikomu}, doi = {10.1177/0040517512468813}, interhash = {9341e81e49246889367086cf9de6239e}, intrahash = {bfc3ff3745fb86555ca39be9a8aa5a50}, journal = {Textile Research Journal}, keywords = {myown}, month = dec, number = 11, pages = {1130--1142}, publisher = {{SAGE} Publications}, timestamp = {2023-05-22T11:05:59.000+0200}, title = {Combining electronics on flexible plastic strips with textiles}, url = {https://doi.org/10.1177%2F0040517512468813}, volume = 83, year = 2012 } - C. Zysset, N. Munzenrieder, T. Kinkeldei, K. Cherenack, and G. Troster, "Woven active-matrix display," IEEE transactions on electron devices, vol. 59, iss. 3, p. 721–728, 2012.
[Bibtex]@article{Zysset_2012, added-at = {2023-05-22T10:57:26.000+0200}, author = {Zysset, C. and Munzenrieder, N. and Kinkeldei, T. and Cherenack, K. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/2e753295cf710415841e88ddc01ccea11/nikomu}, doi = {10.1109/ted.2011.2180724}, interhash = {77c40dd28eb3e928598cfe74bf218b2a}, intrahash = {e753295cf710415841e88ddc01ccea11}, journal = {{IEEE} Transactions on Electron Devices}, keywords = {myown}, month = mar, number = 3, pages = {721--728}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:57:26.000+0200}, title = {Woven active-matrix display}, url = {https://doi.org/10.1109%2Fted.2011.2180724}, volume = 59, year = 2012 } - N. Munzenrieder, C. Zysset, T. Kinkeldei, L. Petti, G. A. Salvatore, and G. Troster, "Mechanically flexible double gate a-IGZO TFTs," in 2012 proceedings of the european solid-state device research conference (ESSDERC), 2012.
[Bibtex]@inproceedings{Munzenrieder_2012, added-at = {2023-05-22T10:56:37.000+0200}, author = {Munzenrieder, Niko and Zysset, Christoph and Kinkeldei, Thomas and Petti, Luisa and Salvatore, Giovanni A. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/22c8b23b008f9337364a10f43e99aa441/nikomu}, booktitle = {2012 Proceedings of the European Solid-State Device Research Conference ({ESSDERC})}, doi = {10.1109/essderc.2012.6343351}, interhash = {a7c8c3d0b4606551e791df822bb9aa39}, intrahash = {2c8b23b008f9337364a10f43e99aa441}, keywords = {myown}, month = sep, publisher = {{IEEE}}, timestamp = {2023-05-22T10:56:37.000+0200}, title = {Mechanically flexible double gate a-{IGZO} {TFTs}}, url = {https://doi.org/10.1109%2Fessderc.2012.6343351}, year = 2012 } - R. M. Erb, K. H. Cherenack, R. E. Stahel, R. Libanori, T. Kinkeldei, N. Münzenrieder, G. Tröster, and A. R. Studart, "Locally reinforced polymer-based composites for elastic electronics," Acs applied materials & interfaces, vol. 4, iss. 6, p. 2860–2864, 2012.
[Bibtex]@article{Erb_2012, added-at = {2023-05-22T10:54:26.000+0200}, author = {Erb, Randall M. and Cherenack, Kunigunde H. and Stahel, Rudolf E. and Libanori, Rafael and Kinkeldei, Thomas and Münzenrieder, Niko and Tröster, Gerhard and Studart, Andre R.}, biburl = {https://www.bibsonomy.org/bibtex/29f3131cedb9584805289c732053eed87/nikomu}, doi = {10.1021/am300508e}, interhash = {bffb22f947670be160fa018e0b585d3b}, intrahash = {9f3131cedb9584805289c732053eed87}, journal = {ACS Applied Materials & Interfaces}, keywords = {myown}, month = jun, number = 6, pages = {2860--2864}, publisher = {American Chemical Society ({ACS})}, timestamp = {2023-05-24T22:02:35.000+0200}, title = {Locally Reinforced Polymer-Based Composites for Elastic Electronics}, url = {https://doi.org/10.1021%2Fam300508e}, volume = 4, year = 2012 } - C. Zysset, T. W. Kinkeldei, N. Munzenrieder, K. Cherenack, and G. Troster, "Integration method for electronics in woven textiles," IEEE transactions on components, packaging and manufacturing technology, vol. 2, iss. 7, p. 1107–1117, 2012.
[Bibtex]@article{Zysset_2012, added-at = {2023-05-22T10:53:17.000+0200}, author = {Zysset, Christoph and Kinkeldei, Thomas Wilhelm and Munzenrieder, Niko and Cherenack, Kunigunde and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/2700ee439d529459a2be234f95e5e9ff4/nikomu}, doi = {10.1109/tcpmt.2012.2189770}, interhash = {a950d0da47ea55c24c9b27e86d067b79}, intrahash = {700ee439d529459a2be234f95e5e9ff4}, journal = {{IEEE} Transactions on Components, Packaging and Manufacturing Technology}, keywords = {myown}, month = jul, number = 7, pages = {1107--1117}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:53:17.000+0200}, title = {Integration Method for Electronics in Woven Textiles}, url = {https://doi.org/10.1109%2Ftcpmt.2012.2189770}, volume = 2, year = 2012 } - T. Kinkeldei, C. Zysset, N. Münzenrieder, and G. Tröster, "Influence of flexible substrate materials on the performance of polymer composite gas sensors," in 14th international meeting on chemical sensors - imcs 2012, 2012, pp. 537-540.
[Bibtex]@inproceedings{Kinkeldei_2012, added-at = {2023-05-22T10:52:11.000+0200}, author = {Kinkeldei, Thomas and Zysset, Christoph and Münzenrieder, Niko and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/252f34f60ddba1029421da01de30f7ed8/nikomu}, booktitle = {14th International Meeting on Chemical Sensors - IMCS 2012}, doi = {10.5162/imcs2012/6.2.4}, interhash = {1e2f7fa53a8b2d210a891c2f18149067}, intrahash = {52f34f60ddba1029421da01de30f7ed8}, keywords = {myown}, pages = {537-540}, publisher = {AMA Service GmbH, Von-Münchhausen-Str. 49, 31515 Wunstorf, Germany}, timestamp = {2023-05-24T22:01:42.000+0200}, title = {Influence of Flexible Substrate Materials on the Performance of Polymer Composite Gas Sensors}, url = {https://doi.org/10.5162%2Fimcs2012%2F6.2.4}, year = 2012 } - T. Kinkeldei, C. Zysset, N. Münzenrieder, L. Petti, and G. Tröster, "In tube integrated electronic nose system on a flexible polymer substrate," Sensors, vol. 12, iss. 10, p. 13681–13693, 2012.
[Bibtex]@article{Kinkeldei_2012, added-at = {2023-05-22T10:50:50.000+0200}, author = {Kinkeldei, Thomas and Zysset, Christoph and Münzenrieder, Niko and Petti, Luisa and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/234670994e3ced17ee1eb1cd4ff8d4888/nikomu}, description = {Sensors | Free Full-Text | In Tube Integrated Electronic Nose System on a Flexible Polymer Substrate}, doi = {10.3390/s121013681}, interhash = {489c22a7b0bb2536071152fc65be7b08}, intrahash = {34670994e3ced17ee1eb1cd4ff8d4888}, journal = {Sensors}, keywords = {myown}, month = oct, number = 10, pages = {13681--13693}, publisher = {{MDPI} {AG}}, timestamp = {2023-05-22T10:50:50.000+0200}, title = {In Tube Integrated Electronic Nose System on a Flexible Polymer Substrate}, url = {https://doi.org/10.3390%2Fs121013681}, volume = 12, year = 2012 } - N. Munzenrieder, L. Petti, C. Zysset, G. A. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, and G. Troster, "Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm," in 2012 international electron devices meeting, 2012.
[Bibtex]@inproceedings{Munzenrieder_2012, added-at = {2023-05-22T10:50:08.000+0200}, author = {Munzenrieder, N. and Petti, L. and Zysset, C. and Salvatore, G. A. and Kinkeldei, T. and Perumal, C. and Carta, C. and Ellinger, F. and Troster, G.}, biburl = {https://www.bibsonomy.org/bibtex/28142413c70747d674c6d721f1d1a39b7/nikomu}, booktitle = {2012 International Electron Devices Meeting}, doi = {10.1109/iedm.2012.6478982}, interhash = {cfe715dc10ecec0cd15aa4da71f64093}, intrahash = {8142413c70747d674c6d721f1d1a39b7}, keywords = {myown}, month = dec, publisher = {{IEEE}}, timestamp = {2023-05-22T10:50:08.000+0200}, title = {Flexible a-{IGZO} {TFT} amplifier fabricated on a free standing polyimide foil operating at 1.2 {MHz} while bent to a radius of 5 mm}, url = {https://doi.org/10.1109%2Fiedm.2012.6478982}, year = 2012 } - N. Munzenrieder, C. Zysset, T. Kinkeldei, and G. Troster, "Design rules for IGZO logic gates on plastic foil enabling operation at bending radii of 3.5 mm," IEEE transactions on electron devices, vol. 59, iss. 8, p. 2153–2159, 2012.
[Bibtex]@article{Munzenrieder_2012, added-at = {2023-05-22T10:49:08.000+0200}, author = {Munzenrieder, Niko and Zysset, Christoph and Kinkeldei, Thomas and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/24474035bf906002c9c472f37021519d4/nikomu}, doi = {10.1109/ted.2012.2198480}, interhash = {0dfac5f9db2bce524fd6fe6456003883}, intrahash = {4474035bf906002c9c472f37021519d4}, journal = {{IEEE} Transactions on Electron Devices}, keywords = {myown}, month = aug, number = 8, pages = {2153--2159}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:49:08.000+0200}, title = {Design Rules for {IGZO} Logic Gates on Plastic Foil Enabling Operation at Bending Radii of 3.5 mm}, url = {https://doi.org/10.1109%2Fted.2012.2198480}, volume = 59, year = 2012 } - T. Kinkeldei, C. Zysset, N. Münzenrieder, and G. Tröster, "An electronic nose on flexible substrates integrated into a smart textile," Sensors and actuators b: chemical, vol. 174, pp. 81-86, 2012.
[Bibtex]@article{KINKELDEI201281, abstract = {Fabrication costs of gas sensors are decreasing due to the use of low cost flexible polymer substrates and solution based fabrication processes. This development creates new application possibilities for gas sensors and allows the installation into objects of our daily life, such as textiles. Challenges with the integration of electronic components on flexible substrates arise mainly due to strain introduced by bending the substrate. This plays an important role especially during weaving as strong mechanical forces bend flexible electronic devices to radii below 1mm. To demonstrate that it is feasible to integrate low cost gas sensors into a textile while preserving the functionality, we developed an electronic nose system for textile integration. The electronic nose consists of four carbon black/polymer gas sensors fabricated on a flexible polymer substrate. After fabrication the substrate was cut into yarn like strips and integrated into a textile to create a smart textile with gas sensing functionalities. We used this smart textile to detect different solvent vapors and classified them accordingly. It was possible to detect single solvents such as acetone until a minimal concentration of 50ppm. The influence of bending on sensors was studied, signal changes introduced by bending could be separated from changes due to solvent exposure. Bending of single strips to a radius below 1mm did not alter the sensor functionality. The presented work shows the feasibility of the process in combination with textile integration.}, added-at = {2023-05-22T10:47:04.000+0200}, author = {Kinkeldei, T. and Zysset, C. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/253303e85bfc802630e4a4620880db34d/nikomu}, description = {An electronic nose on flexible substrates integrated into a smart textile - ScienceDirect}, doi = {https://doi.org/10.1016/j.snb.2012.08.023}, interhash = {7dacf768c2a9ef23cdb4eddfa5dc8ef0}, intrahash = {53303e85bfc802630e4a4620880db34d}, issn = {0925-4005}, journal = {Sensors and Actuators B: Chemical}, keywords = {myown}, pages = {81-86}, timestamp = {2023-05-22T10:47:04.000+0200}, title = {An electronic nose on flexible substrates integrated into a smart textile}, url = {https://www.sciencedirect.com/science/article/pii/S0925400512008374}, volume = 174, year = 2012 }
2011
- C. Zysset, T. Kinkeldei, K. Cherenack, N. Münzenrieder, and G. Tröster, "Verwebbare elektronik," in Mikrosystemtechnik - kongress 2011, 2011, pp. 1-4.
[Bibtex]@inproceedings{Zysset11, abstract = {Intelligente Textilien und Bekleidung kombinieren Elektronik, Sensoren und Textilien, um das Funktionsspektrum von Textilien z. B. in den Bereichen Kleidung, Innenausstattung und technische Textilien, zu erweitern. Es wird ein Verfahren vorgestellt, das mit der IC-Technik, Dünnfilm- und Packagingtechnologie sowie mit dem textilen Weben grosstechnisch etablierte Prozesse kombiniert und damit eine kostengünstige Grossserienproduktion erlaubt. Das Verfahren gliedert sich in mehrere Schritte. Flexible Plastiksubstrate werden in Streifen geschnitten; sie dienen als Trägermaterial für ICs, Dünnfilmbauteile, Sensoren, Verbindungsleitungen und Kontaktflächen. Diese funktionalisierten Streifen werden in Schussrichtung auf Webmaschinen eingewoben. Die rechtwinklige Anordnung im Gewebe ermöglicht elektrische Verbindungen der Streifen untereinander und zur Aussenwelt durch leitende Garne. Anhand eines Demonstrators wird die Umsetzbarkeit dieser Technologie aufgezeigt und die mechanische Robustheit analysiert.}, added-at = {2023-05-22T10:46:53.000+0200}, author = {Zysset, C. and Kinkeldei, T. and Cherenack, K. and Münzenrieder, N. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/23131a818644e1586d8e9940bb0cc467d/nikomu}, booktitle = {MikroSystemTechnik - KONGRESS 2011}, doi = {https://www.vde-verlag.de/proceedings-de/453367060.html}, interhash = {d61dbc16c66ec8a9d4d1114666cb2f72}, intrahash = {3131a818644e1586d8e9940bb0cc467d}, journal = {MikroSystemTechnik - KONGRESS 2011}, keywords = {myown}, pages = {1-4}, publisher = {VDE}, timestamp = {2023-05-24T21:58:14.000+0200}, title = {Verwebbare Elektronik}, url = {https://www.vde-verlag.de/proceedings-de/453367060.html}, year = 2011 } - N. Munzenrieder, K. H. Cherenack, and G. Troster, "The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs," IEEE transactions on electron devices, vol. 58, iss. 7, p. 2041–2048, 2011.
[Bibtex]@article{Munzenrieder_2011, added-at = {2023-05-22T10:41:38.000+0200}, author = {Munzenrieder, Niko and Cherenack, Kunigunde H. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/22c71a9ae8ab24e078199174b90f72b3d/nikomu}, doi = {10.1109/ted.2011.2143416}, interhash = {6464df25b7b06623b6f7437b50ea4aae}, intrahash = {2c71a9ae8ab24e078199174b90f72b3d}, journal = {{IEEE} Transactions on Electron Devices}, keywords = {myown}, month = jul, number = 7, pages = {2041--2048}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:41:38.000+0200}, title = {The Effects of Mechanical Bending and Illumination on the Performance of Flexible {IGZO} {TFTs}}, url = {https://doi.org/10.1109%2Fted.2011.2143416}, volume = 58, year = 2011 } - N. S. Münzenrieder, K. H. Cherenack, and G. Tröster, "Testing of flexible ingazno-based thin-film transistors under mechanical strain," European physical journal-applied physics, vol. 55, iss. 2, p. 23904–, 2011.
[Bibtex]@article{munzenrieder2011testing, abstract = {Thin-film transistors (TFTs) fabricated on flexible plastic substrates are an integral part of future flexible large-area electronic devices like displays and smart textiles. Devices for such applications require stable electrical performance under electrical stress and also during applied mechanical stress induced by bending of the flexible substrate. Mechanical stress can be tensile or compressive strain depending on whether the TFT is located outside or inside of the bending plane. Especially the impact of compressive bending on TFT performance is hard to measure, because the device is covered with the substrate in this case. We present a method which allows us to continuously measure the electrical performance parameters of amorphous Indium-Gallium-Zinc Oxide (a-IGZO) based TFTs exposed to arbitrary compressive and tensile bending radii. To measure the influence of strain on a TFT it is attached and electrically connected to a flexible carrier foil, which afterwards is fastened to two plates in our bending tester. The bending radius can be adjusted by changing the distance between these plates. Thus it is possible to apply bending radii in the range between a totally flat substrate and ≈1 mm, corresponding to a strain of ≈3.5%. The tested bottom-gate TFTs are especially designed for use with our bending tester and fabricated on 50 μm thick flexible Kapton® E polyimide substrates. To show the different application areas of our bending method we characterized our TFTs while they are bent to different tensile and compressive bending radii. These measurements show that the field effect mobilities and threshold voltages of the tested a-IGZO TFTs are nearly, but not absolutely, stable under applied strain, compared to the initial values the mobilities shift by ≈3.5% in the tensile case and ≈−1.5% in the compressive one, at a bending radius of 8 mm. We also measured the influence of repeated bending (2500 cycles over ≈70 h), where a shift of the performance parameters can be observed, too. The saturation mobility of the flat device decreases by 4.5%, and the threshold voltage raises 0.1 V. These results show that it is possible to characterize the influence of different kinds of bending on flexible thin-film devices in a very reliable way with one experimental setup.}, added-at = {2023-05-22T10:40:47.000+0200}, author = {Münzenrieder, N.S and Cherenack, K.H and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/223d4bdf231a130390a80b184a1e6f865/nikomu}, description = {Testing of flexible InGaZnO-based thin-film transistors under mechanical strain | The European Physical Journal - Applied Physics | Cambridge Core}, doi = {DOI: 10.1051/epjap/2011100416}, interhash = {0f496c7caa1ead12c03d5ba43e527462}, intrahash = {23d4bdf231a130390a80b184a1e6f865}, issn = {12860042}, journal = {European Physical Journal-Applied Physics}, keywords = {myown}, number = 2, pages = {23904--}, publisher = {EDP Sciences}, timestamp = {2024-04-15T14:25:48.000+0200}, title = {Testing of flexible InGaZnO-based thin-film transistors under mechanical strain}, url = {https://www.cambridge.org/core/article/testing-of-flexible-ingaznobased-thinfilm-transistors-under-mechanical-strain/958EB7BA5FE2289FDD84E2331C4E7816}, volume = 55, year = 2011 } - C. Zysset, N. S. Münzenrieder, T. Kinkeldei, K. H. Cherenack, and G. Tröster, "Indium-gallium-zinc-oxide based mechanically flexible transimpedance amplifier," Electronics letters, vol. 47, iss. 12, p. 691, 2011.
[Bibtex]@article{Zysset_2011, added-at = {2023-05-22T10:39:55.000+0200}, author = {Zysset, C. and Münzenrieder, N.S. and Kinkeldei, T. and Cherenack, K.H. and Tröster, G.}, biburl = {https://www.bibsonomy.org/bibtex/238d9554e82cd204a4fa790c2f2fdbebc/nikomu}, doi = {10.1049/el.2011.0659}, interhash = {6fc4d265e5ce12424a91d038d983ad05}, intrahash = {38d9554e82cd204a4fa790c2f2fdbebc}, journal = {Electronics Letters}, keywords = {myown}, number = 12, pages = 691, publisher = {Institution of Engineering and Technology ({IET})}, timestamp = {2023-05-22T10:39:55.000+0200}, title = {Indium-gallium-zinc-oxide based mechanically flexible transimpedance amplifier}, url = {https://doi.org/10.1049%2Fel.2011.0659}, volume = 47, year = 2011 } - T. Kinkeldei, N. Munzenrieder, C. Zysset, K. Cherenack, and G. Tröster, "Encapsulation for flexible electronic devices," IEEE electron device letters, vol. 32, iss. 12, p. 1743–1745, 2011.
[Bibtex]@article{Kinkeldei_2011, added-at = {2023-05-22T10:39:13.000+0200}, author = {Kinkeldei, Thomas and Munzenrieder, Niko and Zysset, Christoph and Cherenack, Kunigunde and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/25b24c6514959f13c6cf0fe6bb52fa573/nikomu}, doi = {10.1109/led.2011.2168378}, interhash = {7c12cfc984680d13004cb370f0f8fce7}, intrahash = {5b24c6514959f13c6cf0fe6bb52fa573}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = dec, number = 12, pages = {1743--1745}, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:39:13.000+0200}, title = {Encapsulation for Flexible Electronic Devices}, url = {https://doi.org/10.1109%2Fled.2011.2168378}, volume = 32, year = 2011 } - N. Munzenrieder, C. Zysset, T. Kinkeldei, K. Cherenack, and G. Troster, "A flexible InGaZnO based 1-bit SRAM under mechanical strain," in 2011 semiconductor conference dresden, 2011.
[Bibtex]@inproceedings{Munzenrieder_2011, added-at = {2023-05-22T10:37:52.000+0200}, author = {Munzenrieder, Niko and Zysset, Christoph and Kinkeldei, Thomas and Cherenack, Kunigunde and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/29d81fa5e00dc8d678297ad00d723cb17/nikomu}, booktitle = {2011 Semiconductor Conference Dresden}, doi = {10.1109/scd.2011.6068719}, interhash = {f1d4e5e0d0c92cd0f53b84a90929caf4}, intrahash = {9d81fa5e00dc8d678297ad00d723cb17}, keywords = {myown}, month = sep, publisher = {{IEEE}}, timestamp = {2023-05-22T10:37:52.000+0200}, title = {A flexible {InGaZnO} based 1-bit {SRAM} under mechanical strain}, url = {https://doi.org/10.1109%2Fscd.2011.6068719}, year = 2011 }
2010
- K. Cherenack, C. Zysset, T. Kinkeldei, N. Münzenrieder, and G. Tröster, "Woven electronic fibers with sensing and display functions for smart textiles," Advanced materials, vol. 22, iss. 45, p. 5178–5182, 2010.
[Bibtex]@article{Cherenack_2010, added-at = {2023-05-22T10:31:57.000+0200}, author = {Cherenack, Kunigunde and Zysset, Christoph and Kinkeldei, Thomas and Münzenrieder, Niko and Tröster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/267d5b6c4584ed6e51f037f7a75ebeced/nikomu}, doi = {10.1002/adma.201002159}, interhash = {7517becd05725fe352e3ab5d2788ea35}, intrahash = {67d5b6c4584ed6e51f037f7a75ebeced}, journal = {Advanced Materials}, keywords = {myown}, month = oct, number = 45, pages = {5178--5182}, publisher = {Wiley}, timestamp = {2023-05-22T10:31:57.000+0200}, title = {Woven Electronic Fibers with Sensing and Display Functions for Smart Textiles}, url = {https://doi.org/10.1002%2Fadma.201002159}, volume = 22, year = 2010 } - K. H. Cherenack, N. S. Munzenrieder, and G. Troster, "Impact of mechanical bending on ZnO and IGZO thin-film transistors," IEEE electron device letters, 2010.
[Bibtex]@article{Cherenack_2010, added-at = {2023-05-22T10:30:28.000+0200}, author = {Cherenack, Kunigunde H. and Munzenrieder, Niko S. and Troster, Gerhard}, biburl = {https://www.bibsonomy.org/bibtex/236fafb8236ae80d87b17a6bc2017b3e9/nikomu}, doi = {10.1109/led.2010.2068535}, interhash = {7e00259ccb6367d1561f41644e8a02d0}, intrahash = {36fafb8236ae80d87b17a6bc2017b3e9}, journal = {{IEEE} Electron Device Letters}, keywords = {myown}, month = nov, publisher = {Institute of Electrical and Electronics Engineers ({IEEE})}, timestamp = {2023-05-22T10:30:28.000+0200}, title = {Impact of Mechanical Bending on {ZnO} and {IGZO} Thin-Film Transistors}, url = {https://doi.org/10.1109%2Fled.2010.2068535}, year = 2010 }