Deepa Bhatt

Postdoctoral fellow

Deepa Bhatt received her B.Sc. degree in Physics, Chemistry and Mathematics, M. Sc. Degree (Physics), M.Tech (Nanotechnology) from V. B. S. Purvanchal University, University of Allahabad and Jamia Millia Islamia. She did Ph.D. in Materials Science from Indian Institute of Technology Kanpur, India (2020). After PhD, she joined as Project Engineer in National Centre for Flexible Electronics at Indian Institute of Technology Kanpur, Kanpur, India. She worked for SERB-National Postdoctoral fellowship from Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, India (2022 to 2023). She joined unibz in July 2023.

Main research areas

Her research interest includes the study of chemical and bio-sensing application of thin film transistors utilizing different materials, structures, processing conditions. She developed a flexible thin film transistor-based sensor for biosensing applications. She has explored her interest in the fabrication of sensors array for multianalyte detection. She did work on design and fabrication of microfluidic channels for sensing applications. She studied the application of field effect transistor for detection of DNA hybridization. She worked with different materials as semiconductor for fabrication of semiconductor devices such as silicon, ZnO, indium gallium zinc oxide, 2D materials (Graphene and MOS₂).

Publications:

2023

S. Mishra, Z. Yılmaz-Sercinoglu, H. Moradi, D. Bhatt, C. İ. Kuru, and F. Ulucan-Karnak, “Recent advances in bioinspired sustainable sensing technologies,” Nano-structures and nano-objects, vol. 34, p. 100974, 2023.
[Bibtex]

@article{Mishra_2023,
added-at = {2023-07-18T15:46:21.000+0200},
author = {Mishra, Sachin and Yılmaz-Sercinoglu, Zeynep and Moradi, Hiresh and Bhatt, Deepa and Kuru, Cansu İlke and Ulucan-Karnak, Fulden},
biburl = {https://www.bibsonomy.org/bibtex/2e90e957459049329d9abd56d8de03090/deepa23},
doi = {10.1016/j.nanoso.2023.100974},
interhash = {2c6cc05762246eed6b8d847f6c350cbc},
intrahash = {e90e957459049329d9abd56d8de03090},
journal = {Nano-Structures and Nano-Objects},
keywords = {myown},
month = apr,
pages = 100974,
publisher = {Elsevier {BV}},
timestamp = {2023-07-21T08:56:13.000+0200},
title = {Recent advances in bioinspired sustainable sensing technologies},
url = {https://doi.org/10.1016%2Fj.nanoso.2023.100974},
volume = 34,
year = 2023
}

2021

D. Bhatt, S. Nigam, and S. Panda, “Study of low temperature processing of hfo2 thin films deposited by rf magnetron sputtering for flexible thin film transistors,” in 2021 ieee international flexible electronics technology conference (ifetc), 2021, pp. 18-19.
[Bibtex]

@inproceedings{9580517,
abstract = {Hafnium oxide films have elicited interest in the field-effect transistors because of the high dielectric constant, high band gap and the good interface with oxide semiconductors. In this work, sputtered deposition and post-annealing of hafnium oxide films were studied for reduction of defects at the surface of gate dielectric. AFM and FTIR characterization of the films were conducted. A Metal-Insulator-Metal device was demonstrated for the identification of the capacitance of gate dielectric. The effect of the material properties on the performance of field -effect transistors were investigated.},
added-at = {2023-07-18T15:42:59.000+0200},
author = {Bhatt, Deepa and Nigam, Shivam and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/27224303de4453b8bf21a00b9b2bbc58f/deepa23},
booktitle = {2021 IEEE International Flexible Electronics Technology Conference (IFETC)},
doi = {10.1109/IFETC49530.2021.9580517},
interhash = {d8e6eab1b49fa15e24d19c7768c24736},
intrahash = {7224303de4453b8bf21a00b9b2bbc58f},
keywords = {myown},
month = aug,
pages = {0018-0019},
timestamp = {2023-07-18T15:42:59.000+0200},
title = {Study of low temperature processing of HfO2 thin films deposited by rf magnetron sputtering for flexible thin film transistors},
url = {https://ieeexplore.ieee.org/document/9580517/},
year = 2021
}

D. Bhatt and S. Panda, “Dual-gate ion-sensitive field-effect transistors: a review,” Electrochemical science advances, vol. 2, iss. 6, 2021.
[Bibtex]

@article{Bhatt_2021,
added-at = {2023-07-18T15:40:07.000+0200},
author = {Bhatt, Deepa and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/2f9df5e649e3bc3810e3fbb523e425450/deepa23},
doi = {10.1002/elsa.202100195},
interhash = {c97571ff9e7faba6facf2d11fcd39ead},
intrahash = {f9df5e649e3bc3810e3fbb523e425450},
journal = {Electrochemical Science Advances},
keywords = {myown},
month = dec,
number = 6,
publisher = {Wiley},
timestamp = {2023-07-18T15:40:07.000+0200},
title = {Dual-gate ion-sensitive field-effect transistors: A review},
url = {https://doi.org/10.1002%2Felsa.202100195},
volume = 2,
year = 2021
}

D. Bhatt and S. Panda, “High sensitivity of dual gate isfets using hfo2 and hfo2/y2o3 gate dielectrics,” ACS applied electronic materials, vol. 3, iss. 6, p. 2818–2824, 2021.
[Bibtex]

@article{Bhatt_2021,
added-at = {2023-07-18T15:38:01.000+0200},
author = {Bhatt, Deepa and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/287f2f602f64a0b822cee97a957fb6f61/deepa23},
doi = {10.1021/acsaelm.1c00391},
interhash = {bb60b5413f2f7a4441608edf01bfb3ea},
intrahash = {87f2f602f64a0b822cee97a957fb6f61},
journal = {{ACS} Applied Electronic Materials},
keywords = {myown},
month = jun,
number = 6,
pages = {2818--2824},
publisher = {American Chemical Society ({ACS})},
timestamp = {2023-07-18T15:38:01.000+0200},
title = {High Sensitivity of Dual Gate ISFETs Using HfO2 and HfO2/Y2O3 Gate Dielectrics},
url = {https://doi.org/10.1021%2Facsaelm.1c00391},
volume = 3,
year = 2021
}

2020

D. Bhatt and S. Panda, “Sensitivity enhancement of dual gate field-effect transistors using stacked bottom gate dielectrics,” ACS applied electronic materials, vol. 2, iss. 9, p. 2699–2706, 2020.
[Bibtex]

@article{Bhatt_2020,
added-at = {2023-07-18T15:34:54.000+0200},
author = {Bhatt, Deepa and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/2e43771ff4ad0d72de949585fe475a342/deepa23},
doi = {10.1021/acsaelm.0c00257},
interhash = {88251e3b06a0fcf57346fde0167d41c0},
intrahash = {e43771ff4ad0d72de949585fe475a342},
journal = {{ACS} Applied Electronic Materials},
keywords = {myown},
month = aug,
number = 9,
pages = {2699--2706},
publisher = {American Chemical Society ({ACS})},
timestamp = {2023-07-18T15:34:54.000+0200},
title = {Sensitivity Enhancement of Dual Gate Field-Effect Transistors Using Stacked Bottom Gate Dielectrics},
url = {https://doi.org/10.1021%2Facsaelm.0c00257},
volume = 2,
year = 2020
}

N. Kumar, D. Bhatt, M. Sutradhar, and S. Panda, “Interface mechanisms involved in a-IGZO based dual gate ISFET pH sensor using al2o3 as the top gate dielectric,” Materials science in semiconductor processing, vol. 119, p. 105239, 2020.
[Bibtex]

@article{Kumar_2020,
added-at = {2023-07-18T15:20:28.000+0200},
author = {Kumar, Narendra and Bhatt, Deepa and Sutradhar, Moitri and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/2154a8d302d53b6bff58d7e4e79a23169/deepa23},
doi = {10.1016/j.mssp.2020.105239},
interhash = {1e267b7f5fe6e9a734177b31b12e09d6},
intrahash = {154a8d302d53b6bff58d7e4e79a23169},
journal = {Materials Science in Semiconductor Processing},
keywords = {my own},
month = nov,
pages = 105239,
publisher = {Elsevier {BV}},
timestamp = {2023-07-18T15:20:28.000+0200},
title = {Interface mechanisms involved in a-{IGZO} based dual gate {ISFET} {pH} sensor using Al2O3 as the top gate dielectric},
url = {https://doi.org/10.1016%2Fj.mssp.2020.105239},
volume = 119,
year = 2020
}

D. Bhatt, S. Kumar, and S. Panda, “Amorphous IGZO field effect transistor based flexible chemical and biosensors for label free detection,” Flexible and printed electronics, vol. 5, iss. 1, p. 14010, 2020.
[Bibtex]

@article{Bhatt_2020,
added-at = {2023-07-18T15:18:26.000+0200},
author = {Bhatt, Deepa and Kumar, Satyendra and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/2b25e3f977d2ab1f831dc1815626f637a/deepa23},
doi = {10.1088/2058-8585/ab724c},
interhash = {1ed956acd36a88d8c6665d2b532c8301},
intrahash = {b25e3f977d2ab1f831dc1815626f637a},
journal = {Flexible and Printed Electronics},
keywords = {myown},
month = feb,
number = 1,
pages = 014010,
publisher = {{IOP} Publishing},
timestamp = {2023-07-18T15:18:57.000+0200},
title = {Amorphous {IGZO} field effect transistor based flexible chemical and biosensors for label free detection},
url = {https://doi.org/10.1088%2F2058-8585%2Fab724c},
volume = 5,
year = 2020
}

2019

D. Bhatt, N. Kumar, and S. Panda, “Stacked top gate dielectrics in dual gate ion sensitive field effect transistors: role of interfaces,” ACS applied electronic materials, vol. 1, iss. 8, p. 1465–1473, 2019.
[Bibtex]

@article{Bhatt_2019,
added-at = {2023-07-18T15:50:15.000+0200},
author = {Bhatt, Deepa and Kumar, Narendra and Panda, Siddhartha},
biburl = {https://www.bibsonomy.org/bibtex/24866b88ba07bbebac4b51fbc839e7dc4/deepa23},
doi = {10.1021/acsaelm.9b00267},
interhash = {2cebeac242bdd6bea745342be16ef413},
intrahash = {4866b88ba07bbebac4b51fbc839e7dc4},
journal = {{ACS} Applied Electronic Materials},
keywords = {myown},
month = jul,
number = 8,
pages = {1465--1473},
publisher = {American Chemical Society ({ACS})},
timestamp = {2023-07-18T15:50:15.000+0200},
title = {Stacked Top Gate Dielectrics in Dual Gate Ion Sensitive Field Effect Transistors: Role of Interfaces},
url = {https://doi.org/10.1021%2Facsaelm.9b00267},
volume = 1,
year = 2019
}