Zahid Husain

Ph.D student

Qazi Zahid Husain received his bachelor of technology degree in electronics and communication engineering, from Gautam Buddha Technical University, UP, India. He received a master of technology degree from Jamia Millia Islamia (Central University), New Delhi, India. In his final semester of M. Tech, he carried out research on the project entitled “Study of Silicon (Si) doped Gallium Nitride (GaN) films deposited by sputtering”, thin film laboratory, Department of Physics, IIT-Bombay, India. He has worked at National Centre for Flexible Electronics (NCFlexE), IIT Kanpur, India. He has worked at the Department of Electrical Engineering, Indian Institute of Technology (IIT) Bombay, India. Presently, He is pursuing Ph.D. program at Unibz.

Main research areas

Green Electronics, Flexible Electronics, Thin Films, Wide Band Semiconductor.


S. Mohan, S. S. Major, R. S. Srinivasa and Q. Z. Husain, Method and apparatus for forming silicon doped gallium nitride (GaN) films by a co-sputtering technique. Indian patent 4554/MUM/2015 (Granted). Publication number: WO 2017094028 A1.