Dianne Corsino

Postdoctoral fellow

Dianne Corsino graduated from the University of the Philippines – Diliman in 2016 with a degree in Bachelor of Science in Materials Engineering. She continued taking graduate studies at Nara Institute of Science and Technology where she was awarded degrees in Master of Engineering in Materials Science and Doctor of Engineering in Materials Science in 2018 and 2021. For her master’s thesis, she mainly worked on the atomic layer deposition of Al2O3 passivation for improving the reliability of vacuum-processed oxide thin-film transistors. For her doctoral thesis, she worked on the transformation of an oxide semiconductor to a conductor for fully solution-processed oxide thin-film transistor applications. She ran experiments on various photo-assisted techniques such as UV irradiation and laser technologies.Currently, she is a postdoctoral research fellow in the Faculty of Science and Technology in the Free University of Bozen-Bolzano.

Main research areas

Fabrication and characterization of flexible electronics

Publications:

2023

F. Catania, N. S. Khaanghah, D. Corsino, H. de Souza Oliveira, A. Carrasco-Pena, K. Ishida, T. Meister, F. Ellinger, G. Cantarella, and N. Münzenrieder, “AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact,” Ieee trans. electron devices, p. 1–5, 2023.
[Bibtex]

@article{Catania2023Oct,
added-at = {2023-11-07T15:35:12.000+0100},
author = {Catania, Federica and Khaanghah, Niloofar Saeedzadeh and Corsino, Dianne and de Souza Oliveira, Hugo and Carrasco-Pena, Alejandro and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko},
biburl = {https://www.bibsonomy.org/bibtex/21afa945461593c6d2e3fb615f851f36e/diannecorsino},
doi = {10.1109/TED.2023.3323914},
interhash = {1e078a4fe11e0c4381f87a5a0ee4daed},
intrahash = {1afa945461593c6d2e3fb615f851f36e},
journal = {IEEE Trans. Electron Devices},
keywords = {myown},
month = oct,
pages = {1--5},
publisher = {IEEE},
timestamp = {2023-11-07T15:35:12.000+0100},
title = {{AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact}},
year = 2023
}

D. C. Corsino, E. Bestelink, F. Catania, R. A. Sporea, N. Münzenrieder, and G. Cantarella, “In-ga-zn-o source-gated transistors with 3nm sio2 tunnel layer on a flexible polyimide substrate,” in 2023 ieee international flexible electronics technology conference (ifetc), 2023, pp. 1-3.
[Bibtex]

@inproceedings{corsino2023ingazno,
added-at = {2023-11-07T15:23:09.000+0100},
author = {Corsino, Dianne C. and Bestelink, Eva and Catania, Federica and Sporea, Radu A. and Münzenrieder, Niko and Cantarella, Giuseppe},
biburl = {https://www.bibsonomy.org/bibtex/26202e400ffb77bada0ec8febe6aca2fa/diannecorsino},
booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)},
doi = {10.1109/IFETC57334.2023.10254818},
interhash = {e62014f692092c64c66b924a4c6c9171},
intrahash = {6202e400ffb77bada0ec8febe6aca2fa},
keywords = {myown},
month = {August},
pages = {1-3},
publisher = {IEEE},
timestamp = {2023-11-07T15:39:58.000+0100},
title = {In-Ga-Zn-O Source-Gated Transistors with 3nm SiO2 Tunnel Layer on a Flexible Polyimide Substrate},
url = {https://doi.org/10.1109/IFETC57334.2023.10254818},
year = 2023
}

G. Cantarella, F. Catania, D. Corsino, and N. Münzenrieder, “Unobtrusive thin-film devices and sustainable green electronics,” in 2023 ieee international flexible electronics technology conference (ifetc), 2023, pp. 1-3.
[Bibtex]

@inproceedings{cantarella2023unobtrusive,
added-at = {2023-11-07T15:18:53.000+0100},
author = {Cantarella, Giuseppe and Catania, Federica and Corsino, Dianne and Münzenrieder, Niko},
biburl = {https://www.bibsonomy.org/bibtex/2e72acb71fc7eef5f9b270d4bf279f324/diannecorsino},
booktitle = {2023 IEEE International Flexible Electronics Technology Conference (IFETC)},
doi = {10.1109/IFETC57334.2023.10254853},
interhash = {0d89bf05eee55f682669e38c3fa162e2},
intrahash = {e72acb71fc7eef5f9b270d4bf279f324},
keywords = {myown},
month = {August},
pages = {1-3},
publisher = {IEEE},
timestamp = {2023-11-07T15:18:53.000+0100},
title = {Unobtrusive Thin-Film Devices and Sustainable Green Electronics},
url = {https://doi.org/10.1109/IFETC57334.2023.10254853},
year = 2023
}

D. C. Corsino, J. P. S. Bermundo, M. A. Razali, M. Uenuma, and Y. Uraoka, “Continuous-wave green laser activation of transparent InZnO electrodes for fully solution-processed oxide thin-film transistors,” ACS applied electronic materials, 2023.
[Bibtex]

@article{Corsino_2023,
added-at = {2023-10-31T15:15:36.000+0100},
author = {Corsino, Dianne C. and Bermundo, Juan Paolo S. and Razali, Muhammad Arif and Uenuma, Mutsunori and Uraoka, Yukiharu},
biburl = {https://www.bibsonomy.org/bibtex/21f3064e3dbe27b4f05ca245715d66106/diannecorsino},
doi = {10.1021/acsaelm.3c00968},
interhash = {c12be88cf9b243dcc3563c921e6a2865},
intrahash = {1f3064e3dbe27b4f05ca245715d66106},
journal = {{ACS} Applied Electronic Materials},
keywords = {myown},
month = oct,
publisher = {American Chemical Society ({ACS})},
timestamp = {2023-10-31T15:15:36.000+0100},
title = {Continuous-Wave Green Laser Activation of Transparent {InZnO} Electrodes for Fully Solution-Processed Oxide Thin-Film Transistors},
url = {https://doi.org/10.1021%2Facsaelm.3c00968},
year = 2023
}

N. S. Khaanghah, D. Corsino, F. Catania, J. Costa, G. Cantarella, and N. Münzenrieder, “Influence of semiconductor island geometry on the ac performance of flexible ingazno tfts,” Ieee electron device letters, vol. 44, iss. 5, pp. 773-776, 2023.
[Bibtex]

@article{10064308,
abstract = {The AC performance of flexible TFTs sufferers from parasitics caused by tolerances needed for the fabrication on free-standing plastic foils. In this context, the semiconductor island can either be wider or narrower than the source/drain contacts. Traditionally, the second configuration is expected to result in faster TFTs as the total gate overlap area is smaller. However, here it is shown that $\mathrm {2.5~ \mu \text {m} }$ long flexible InGaZnO TFTs with wide semiconductor islands exhibit better frequency performance such as a ${f}_{T}$ of $\mathrm {26.1~ \text {M} \text {Hz} }$ (compared to ${f}_{T}$ of $\mathrm {13.8~ \text {M} \text {Hz} }$ of TFTs with narrow semiconductor islands). This effect is confirmed for flat and bend TFTs and is caused by current spreading in the semiconductor islands, as well as the frequency dependency of the gate capacitance.},
added-at = {2023-06-16T13:00:44.000+0200},
author = {Khaanghah, Niloofar Saeedzadeh and Corsino, Dianne and Catania, Federica and Costa, Júlio and Cantarella, Giuseppe and Münzenrieder, Niko},
biburl = {https://www.bibsonomy.org/bibtex/23d13cbb5d0ecb97506b3b0663ca99c88/diannecorsino},
doi = {10.1109/LED.2023.3254609},
interhash = {4956e71f65ed2e20f6d1909d7592339b},
intrahash = {3d13cbb5d0ecb97506b3b0663ca99c88},
issn = {1558-0563},
journal = {IEEE Electron Device Letters},
keywords = {myown},
month = may,
number = 5,
pages = {773-776},
timestamp = {2023-06-16T13:00:44.000+0200},
title = {Influence of Semiconductor Island Geometry on the AC Performance of Flexible InGaZnO TFTs},
url = {https://ieeexplore.ieee.org/document/10064308/},
volume = 44,
year = 2023
}

2022

F. Catania, M. Ahmad, D. Corsino, N. Saeedzadeh Khaanghah, L. Petti, N. Münzenrieder, and G. Cantarella, “Ac performance of flexible transparent ingazno thin-film transistors and circuits,” Ieee transactions on electron devices, vol. 69, iss. 9, pp. 4930-4935, 2022.
[Bibtex]

@article{9843931,
abstract = {Transparent transistors are mainly investigated in view of their integration in displays and their employment in wearable electronics where the integration of flexible and imperceptible systems is an important requirement. Here, the fabrication and ac performance of flexible InGaZnO thin-film transistors (TFTs) and circuits are presented to evaluate their suitability for analog sensor conditioning applications. Functional oxides are employed to guarantee the transparency of the device, while their fabrication processes are suitable to directly realize electronics on a flexible polyimide substrate. The TFTs show state-of-the-art performance with a field-effect mobility $\mu _{\text {eff}}\,\,= {19}.{39}\,\, \text {cm}^{{2}} \text {V}^{-1} \text {s}^{-1}$ and functionality while bent to radii as low as 5 mm. Reliable scattering parameters measurements confirm transit frequencies as high as $f_{t}~\approx ~7.84$ MHz. Simultaneously, nMOS ring oscillators (ROs) show functionality at supply voltage ${V} _{\text {DD}}$ ranging from 1.75 to 12.25 V with a maximum oscillation frequency ${f} _{\text {osc}}\,\,=132.9$ kHz. Finally, common-source amplifiers (CSAs) exhibit the voltage gains up to 10.7 dB, the cutoff frequencies up to 10.8 kHz, and a power consumption down to $4.4~\mu \text{W}$ .},
added-at = {2023-06-16T13:01:24.000+0200},
author = {Catania, Federica and Ahmad, Mukhtar and Corsino, Dianne and Saeedzadeh Khaanghah, Niloofar and Petti, Luisa and Münzenrieder, Niko and Cantarella, Giuseppe},
biburl = {https://www.bibsonomy.org/bibtex/21c12ab20736fcbbc142412ec3e1da30a/diannecorsino},
doi = {10.1109/TED.2022.3193012},
interhash = {d6dccf9a862a4a51e81710206d4fd727},
intrahash = {1c12ab20736fcbbc142412ec3e1da30a},
issn = {1557-9646},
journal = {IEEE Transactions on Electron Devices},
keywords = {myown},
month = {Sep.},
number = 9,
pages = {4930-4935},
timestamp = {2023-06-16T13:01:24.000+0200},
title = {AC Performance of Flexible Transparent InGaZnO Thin-Film Transistors and Circuits},
url = {https://ieeexplore.ieee.org/document/9843931/},
volume = 69,
year = 2022
}

D. Corsino, F. Catania, K. Ishida, T. Meister, F. Ellinger, G. Cantarella, and N. Münzenrieder, “Monolithic integration, performance, and comparison of self-aligned and conventional igzo thin-film transistors on a flexible substrate,” Ieee journal on flexible electronics, vol. 1, iss. 3, pp. 159-166, 2022.
[Bibtex]

@article{9904604,
abstract = {Flexible electronics, most prominently thin-film transistors (TFTs) on plastic substrates, are considered the prime building block for the realization of innovative wearable systems. Two of the currently most successful fabrication processes of transistors on free-standing polymer foils are large-area-compatible devices structured by conventional UV lithography and high-speed transistors realized by self-alignment. Here, both processes, based on InGaZnO (IGZO) technology, are combined for the first time. This not only demonstrates their compatibility, but also showcases the differences between the resulting devices. Concerning the geometry, TFTs with the same nominal designed channel length of 1.5μm exhibit a real channel length of 1.5μm (self-aligned) and 4.5μm (conventional). Furthermore, the integrated side-by-side fabrication enables the electrical comparison of both types of TFTs excluding external factors. While all TFTs exhibit similar threshold voltages around $\mathrm {0 V}$ and excellent on/off ratios of $\approx \mathrm {e10 }$ , conventional TFTs are easier to fabricate and have comparably higher mobilities up to 16cm2V−1s−1. At the same time, self-aligned TFTs demonstrate better ac performance, demonstrating a maximum oscillation frequency of 216 MHz. This integration shows new possibilities for the realization of complex systems made from building blocks optimized for reliability and speed.},
added-at = {2023-06-16T13:00:14.000+0200},
author = {Corsino, Dianne and Catania, Federica and Ishida, Koichi and Meister, Tilo and Ellinger, Frank and Cantarella, Giuseppe and Münzenrieder, Niko},
biburl = {https://www.bibsonomy.org/bibtex/2640ada2646975a2977df4f4f857c5b50/diannecorsino},
doi = {10.1109/JFLEX.2022.3210492},
interhash = {a7bc5b770006ccc72ea4881c23dea00d},
intrahash = {640ada2646975a2977df4f4f857c5b50},
issn = {2768-167X},
journal = {IEEE Journal on Flexible Electronics},
keywords = {myown},
month = {July},
number = 3,
pages = {159-166},
timestamp = {2023-06-16T13:00:14.000+0200},
title = {Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate},
url = {https://ieeexplore.ieee.org/document/9904604/},
volume = 1,
year = 2022
}

2020

D. Corsino, J. P. Bermundo, M. N. Fujii, Y. Ishikawa, H. Ikenoue, and Y. Uraoka, “P-11: high performance all-solution processed inzno thin-film transistors via photo-functionalization at varying fluence and annealing environment,” SID symposium digest of technical papers, vol. 51, iss. 1, p. 1350–1353, 2020.
[Bibtex]

@article{Corsino_2020,
added-at = {2023-06-16T13:07:36.000+0200},
author = {Corsino, Dianne and Bermundo, Juan Paolo and Fujii, Mami N. and Ishikawa, Yasuaki and Ikenoue, Hiroshi and Uraoka, Yukiharu},
biburl = {https://www.bibsonomy.org/bibtex/2b429f10ee20b079486d7a8c722172e5a/diannecorsino},
doi = {10.1002/sdtp.14134},
interhash = {ae0149decab51f832cb1da690fd34ef8},
intrahash = {b429f10ee20b079486d7a8c722172e5a},
journal = {{SID} Symposium Digest of Technical Papers},
keywords = {myown},
month = aug,
number = 1,
pages = {1350--1353},
publisher = {Wiley},
timestamp = {2023-06-16T13:07:36.000+0200},
title = {P-11: High Performance All-Solution Processed InZnO Thin-Film Transistors via Photo-Functionalization at Varying Fluence and Annealing Environment},
url = {https://doi.org/10.1002%2Fsdtp.14134},
volume = 51,
year = 2020
}

D. C. Corsino, J. P. S. Bermundo, C. Kulchaisit, M. N. Fujii, Y. Ishikawa, H. Ikenoue, and Y. Uraoka, “High-performance fully solution-processed oxide thin-film transistors via photo-assisted role tuning of inzno,” ACS applied electronic materials, vol. 2, iss. 8, p. 2398–2407, 2020.
[Bibtex]

@article{Corsino_2020,
added-at = {2023-06-16T13:05:59.000+0200},
author = {Corsino, Dianne C. and Bermundo, Juan Paolo S. and Kulchaisit, Chaiyanan and Fujii, Mami N. and Ishikawa, Yasuaki and Ikenoue, Hiroshi and Uraoka, Yukiharu},
biburl = {https://www.bibsonomy.org/bibtex/2654387161718d45a592f766bec33647c/diannecorsino},
doi = {10.1021/acsaelm.0c00348},
interhash = {04f363c2b128dd8b789291f4ee31b18d},
intrahash = {654387161718d45a592f766bec33647c},
journal = {{ACS} Applied Electronic Materials},
keywords = {myown},
month = jul,
number = 8,
pages = {2398--2407},
publisher = {American Chemical Society ({ACS})},
timestamp = {2023-06-16T13:05:59.000+0200},
title = {High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO},
url = {https://doi.org/10.1021%2Facsaelm.0c00348},
volume = 2,
year = 2020
}

D. C. Corsino, J. P. S. Bermundo, M. N. Fujii, K. Takahashi, Y. Ishikawa, and Y. Uraoka, “Bias stress and humidity exposure of amorphous ingazno thin-film transistors with atomic layer deposited al2o3 passivation using dimethylaluminum hydride at 200c,” Journal of physics d: applied physics, vol. 53, iss. 16, p. 165103, 2020.
[Bibtex]

@article{Corsino_2020,
added-at = {2023-06-16T13:05:13.000+0200},
author = {Corsino, Dianne C and Bermundo, Juan Paolo S and Fujii, Mami N and Takahashi, Kiyoshi and Ishikawa, Yasuaki and Uraoka, Yukiharu},
biburl = {https://www.bibsonomy.org/bibtex/26edf160a3c906268ea164531bac9a320/diannecorsino},
doi = {10.1088/1361-6463/ab6e97},
interhash = {694b65286fb3f016d00e98affeacd543},
intrahash = {6edf160a3c906268ea164531bac9a320},
journal = {Journal of Physics D: Applied Physics},
keywords = {myown},
month = feb,
number = 16,
pages = 165103,
publisher = {{IOP} Publishing},
timestamp = {2023-06-16T13:05:13.000+0200},
title = {Bias stress and humidity exposure of amorphous InGaZnO thin-film transistors with atomic layer deposited Al2O3 passivation using dimethylaluminum hydride at 200C},
url = {https://doi.org/10.1088%2F1361-6463%2Fab6e97},
volume = 53,
year = 2020
}

2018

D. C. Corsino, J. P. S. Bermundo, M. N. Fujii, K. Takahashi, Y. Ishikawa, and Y. Uraoka, “Dimethylaluminum hydride for atomic layer deposition of al2o3 passivation for amorphous ingazno thin-film transistors,” Applied physics express, vol. 11, iss. 6, p. 61103, 2018.
[Bibtex]

@article{Corsino_2018,
added-at = {2023-06-16T13:03:40.000+0200},
author = {Corsino, Dianne C. and Bermundo, Juan Paolo S. and Fujii, Mami N. and Takahashi, Kiyoshi and Ishikawa, Yasuaki and Uraoka, Yukiharu},
biburl = {https://www.bibsonomy.org/bibtex/281b5f0a4b657d75609a7a2f2cde06171/diannecorsino},
doi = {10.7567/apex.11.061103},
interhash = {ddabf37423c2280bbaff5ed1007b3fb7},
intrahash = {81b5f0a4b657d75609a7a2f2cde06171},
journal = {Applied Physics Express},
keywords = {myown},
month = may,
number = 6,
pages = 061103,
publisher = {{IOP} Publishing},
timestamp = {2023-06-16T13:03:40.000+0200},
title = {Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors},
url = {https://doi.org/10.7567%2Fapex.11.061103},
volume = 11,
year = 2018
}

2017

D. C. Corsino and M. D. L. Balela, “Room temperature sintering of printer silver nanoparticle conductive ink,” IOP conference series: materials science and engineering, vol. 264, p. 12020, 2017.
[Bibtex]

@article{Corsino_2017,
added-at = {2023-06-16T13:11:09.000+0200},
author = {Corsino, Dianne C. and Balela, Mary Donnabelle L.},
biburl = {https://www.bibsonomy.org/bibtex/2ee69da1f34348fef5c4faef89503c0b2/diannecorsino},
doi = {10.1088/1757-899x/264/1/012020},
interhash = {666860983b7df0eeabcfa0173124413e},
intrahash = {ee69da1f34348fef5c4faef89503c0b2},
journal = {{IOP} Conference Series: Materials Science and Engineering},
keywords = {myown},
month = nov,
pages = 012020,
publisher = {{IOP} Publishing},
timestamp = {2023-06-16T13:11:09.000+0200},
title = {Room temperature sintering of printer silver nanoparticle conductive ink},
url = {https://doi.org/10.1088%2F1757-899x%2F264%2F1%2F012020},
volume = 264,
year = 2017
}